SOT-223 BODY MARKING A G Search Results

MMFT5P03HD

Abstract: NTF5P03T3 SMD310 ntf5p03t3 sot223
Contextual Info: NTF5P03T3 Preferred Device Power MOSFET 3.0 Amps, 60 Volts P–Channel SOT–223 Features • • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT–223 Surface Mount Package Avalanche Energy Specified

9N05A

Abstract: NIF9N05ACLT1G MARKING 117-a SOT-223 NIF9N05ACLT3G A1 SOT-223 MOSFET
Contextual Info: NIF9N05CL, NIF9N05ACL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped

F9N05

Abstract: MARKING 117-a SOT-223 NIF9N05CL NIF9N05CLT1 NIF9N05CLT1G NIF9N05CLT3 NIF9N05CLT3G A1 SOT-223 MOSFET
Contextual Info: NIF9N05CL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP

4030p

Abstract: NJV4030PT1G
Contextual Info: NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http://onsemi.com Features PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −

Contextual Info: BSP19AT1G, NSVBSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for

4031N

Abstract: NJV4031NT1G NJV4031NT3G
Contextual Info: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain − = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc

mosfet L 3055 motorola

Abstract: L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3
Contextual Info: MOTOROLA Order this document by MMFT3055E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET

sot-223 code marking

Contextual Info: BSP19AT1 Preferred Device NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for

Contextual Info: MOTOROLA Order this document by MMFT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2955E Motorola Preferred Device SOT–223 for Surface Mount TMOS MEDIUM POWER FET 1.2 AMP

2N02l

Abstract: 2N02 2N3904 AN569 MMFT2N02EL MMFT2N02ELT1 MMFT2N02ELT3 SMD310
Contextual Info: MOTOROLA Order this document by MMFT2N02EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2N02EL Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET

AYW marking code IC

Abstract: 306 marking code transistor MARKING KV SOT-223 BSP16T1 BSP19AT1 BSP19AT1G
Contextual Info: BSP19AT1 Preferred Device NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for

Contextual Info: BSP19AT1 Preferred Device NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for

NT 2955 ON transistor

Abstract: Marking 2955 MMFT2955ET1 fr 2955 2N3904 AN569 MMFT2955E MMFT2955ET3 SMD310 2955 DPAK
Contextual Info: MOTOROLA Order this document by MMFT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2955E Motorola Preferred Device SOT–223 for Surface Mount TMOS MEDIUM POWER FET 1.2 AMP

transistor Amp 3055L

Abstract: 3055L 3055L transistor marking 3055l amp 3055l motorola an569 thermal MMFT3055EL MOTOROLA TRANSISTOR T2 2N3904 AN569
Contextual Info: MOTOROLA Order this document by MMFT3055EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055EL Motorola Preferred Device SOT–223 for Surface Mount MEDIUM POWER LOGIC LEVEL TMOS FET

motorola transistor dpak marking

Abstract: 1N10 2N3904 AN569 MMFT1N10E MMFT1N10ET1 MMFT1N10ET3 SMD310
Contextual Info: MOTOROLA Order this document by MMFT1N10E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT1N10E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET

SP19A

Contextual Info: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

Contextual Info: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

Contextual Info: NIF9N05CL Protected Power MOSFET 2.6 Amps, 52 Volts N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped

F9N05

Abstract: gate to drain clamp MARKING 117-a SOT-223 A 0412 MOSFET
Contextual Info: NIF9N05CL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • •

Contextual Info: NYC222STT1G, NYC226STT1G, NYC228STT1G Sensitive Gate Silicon Controlled Rectifiers http://onsemi.com Reverse Blocking Thyristors SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS Designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power

F9N05

Abstract: NIF9N05CL NIF9N05CLT1 NIF9N05CLT3
Contextual Info: NIF9N05CL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • •

Contextual Info: NTF5P03, NVF5P03 Power MOSFET -5.2 A, -30 V P−Channel SOT−223 http://onsemi.com Features • • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT−223 Surface Mount Package Avalanche Energy Specified

SP19A

Contextual Info: BSP19AT1 Preferred Device NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for

5P03

Abstract: NTF5P03T3G MMFT5P03HD NTF5P03T3 P-channel sot-223 ntf5p03t3 sot223
Contextual Info: NTF5P03T3 Preferred Device Power MOSFET 5.2 Amps, 30 Volts P−Channel SOT−223 http://onsemi.com Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT−223 Surface Mount Package