SOT-223 BODY MARKING A G Search Results

F9N05

Abstract: MARKING 117-a SOT-223 NIF9N05CL NIF9N05CLT1 NIF9N05CLT1G NIF9N05CLT3 NIF9N05CLT3G A1 SOT-223 MOSFET
Contextual Info: NIF9N05CL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP

4030p

Abstract: NJV4030PT1G
Contextual Info: NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http://onsemi.com Features PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −

Contextual Info: BSP19AT1G, NSVBSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for

4031N

Abstract: NJV4031NT1G NJV4031NT3G
Contextual Info: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain − = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc

mosfet L 3055 motorola

Abstract: L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3
Contextual Info: MOTOROLA Order this document by MMFT3055E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET

Contextual Info: MOTOROLA Order this document by MMFT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2955E Motorola Preferred Device SOT–223 for Surface Mount TMOS MEDIUM POWER FET 1.2 AMP

AYW marking code IC

Abstract: 306 marking code transistor MARKING KV SOT-223 BSP16T1 BSP19AT1 BSP19AT1G
Contextual Info: BSP19AT1 Preferred Device NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for

Contextual Info: BSP19AT1 Preferred Device NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for

transistor Amp 3055L

Abstract: 3055L 3055L transistor marking 3055l amp 3055l motorola an569 thermal MMFT3055EL MOTOROLA TRANSISTOR T2 2N3904 AN569
Contextual Info: MOTOROLA Order this document by MMFT3055EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055EL Motorola Preferred Device SOT–223 for Surface Mount MEDIUM POWER LOGIC LEVEL TMOS FET

MMFT1N10ET1

Abstract: 1N10
Contextual Info: MMFT1N10E Medium Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS E−FETt SOT−223 for Surface Mount http://onsemi.com This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation

motorola transistor dpak marking

Abstract: 1N10 2N3904 AN569 MMFT1N10E MMFT1N10ET1 MMFT1N10ET3 SMD310
Contextual Info: MOTOROLA Order this document by MMFT1N10E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT1N10E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET

SP19A

Contextual Info: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

F9N05

Abstract: gate to drain clamp MARKING 117-a SOT-223 A 0412 MOSFET
Contextual Info: NIF9N05CL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • •

Contextual Info: NYC222STT1G, NYC226STT1G, NYC228STT1G Sensitive Gate Silicon Controlled Rectifiers http://onsemi.com Reverse Blocking Thyristors SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS Designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power

5P03

Abstract: NTF5P03T3G MMFT5P03HD NTF5P03T3 P-channel sot-223 ntf5p03t3 sot223
Contextual Info: NTF5P03T3 Preferred Device Power MOSFET 5.2 Amps, 30 Volts P−Channel SOT−223 http://onsemi.com Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT−223 Surface Mount Package

17-33g

Abstract: 117AJg 117-5g VOLTAGE REGULATOR 17-18g VOLTAGE REGULATOR 1712G 1733vg 117-5g 1175vg 17ajvg 17-18g
Contextual Info: NCP1117, NCV1117 1.0 A Low-Dropout Positive Fixed and Adjustable Voltage Regulators The NCP1117 series are low dropout positive voltage regulators that are capable of providing an output current that is in excess of 1.0 A with a maximum dropout voltage of 1.2 V at 800 mA over

NYC222STT1G

Abstract: MCR22 NYC226STT1G NYC228STT1G
Contextual Info: NYC222STT1G, NYC226STT1G, NYC228STT1G Product Preview Sensitive Gate Silicon Controlled Rectifiers http://onsemi.com Reverse Blocking Thyristors SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS Designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power

BSP16T1

Abstract: BSP19AT1 SMD310
Contextual Info: ON Semiconductort NPN Silicon Epitaxial Transistor BSP19AT1 ON Semiconductor Preferred Device This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for

NCP1055 B TO261

Abstract: NCP1055 B HIGH FREQUENCY Transformer ee19 CTX22-15348 EE19 type bobbin NCP1052 ncp1053b optocoupler marking 530 NCP105x JESD78
Contextual Info: NCP1050, NCP1051, NCP1052, NCP1053, NCP1054, NCP1055 Monolithic High Voltage Gated Oscillator Power Switching Regulator http://onsemi.com The NCP1050 through NCP1055 are monolithic high voltage regulators that enable end product equipment to be compliant with low

sot-223 body marking D K Q F

Abstract: ct-96 MV7404T1
Contextual Info: MOTOROLA Order this document by MV7404T1/D SEMICONDUCTOR TECHNICAL DATA MV7404T1 Silicon Hyper-Abrupt Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for high capacitance and a tuning ratio of greater than 10 times over a bias range of 2.0 to 10 volts. It provides tuning over a

MMFT5P03HD

Abstract: NTF5P03T3 SMD310 5p03
Contextual Info: NTF5P03T3 Preferred Device Power MOSFET 5.2 Amps, 30 Volts P–Channel SOT–223 Features • • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT–223 Surface Mount Package Avalanche Energy Specified

Contextual Info: NTF5P03T3 Preferred Device Power MOSFET 5.2 Amps, 30 Volts P−Channel SOT−223 Features • • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT−223 Surface Mount Package Avalanche Energy Specified

4030p

Abstract: NJT4030P NJT4030PT1G NJT4030PT3G
Contextual Info: NJT4030P Preferred Device Bipolar Power Transistors PNP Silicon Features • Collector −Emitter Sustaining Voltage − • • • • • • http://onsemi.com VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − = 200 (Min) @ IC = 1.0 Adc hFE

6P02

Abstract: *f6p02 NTF6P02T3 NTF6P02T3G
Contextual Info: NTF6P02T3 Power MOSFET −6.0 Amps, −20 Volts P−Channel SOT−223 http://onsemi.com Features • • • • • Low RDS on Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified Pb−Free Package is Available −6.0 AMPERES