SOT 23 MARKING CODE NT Search Results

SAS SOT23

Abstract: SAs SOT-23 marking BSS100 BSS123 marking BSs sot23 SOT-23 marking AFE MARKING code VG
Contextual Info: BSS 100 BSS 123 SIPMOS Small-Signal Transistors lD - 100 V = 0 .2 2 /0 .1 7 A ^ D S o n = »os 6 -0 TO -92 (BSS 100) SOT-23 (BSS 123) £3 • N channel • Enhancem ent mode • Packages: TO-92, D SOT-23 ’ ) Type Marking Ordering code for version on

DIODE WJ SOt23

Abstract: 7.a sot-23 marking BSs sot23
Contextual Info: S IE M F N S SIPMOS Small-Signal Transistors BSS 84 BSS 110 VDS = -5 0 V lD = - 0 .1 3 /- 0 .1 7 A ^DS on = 10 Q • P channel • Enhancem ent mode • Packages: SOT-23, TO-92 (BSS 110) SOT-23 (BSS 84) D S TO -92 ') Type Marking Ordering code for version on

marking BSs sot23 siemens

Abstract: marking BSs sot23
Contextual Info: SIEMENS BSS 284 SIPMOS Small-Signal T ransistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-1.6 V Type b -0.13 A BSS 284 VDS -50 V Type BSS 284 Ordering Code Q62702-S299 ^DS(on) 10Q Package Marking SOT-23 SDs Tape and Reel Information

Contextual Info: Product specification NTR1P02L, NVTR01P02L Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package V BR DSS RDS(on) Max ID Max −20 V 220 mW @ −4.5 V −1.3 A P−Channel D These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal

Contextual Info: Product specification NTR4501N Power MOSFET V BR DSS RDS(on) TYP ID MAX (Note 1) 70 mW @ 4.5 V 3.6 A 85 mW @ 2.5 V 3.1 A 20 V, 3.2 A, Single N−Channel, SOT−23 20 V Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching

Contextual Info: Product specification NTR4502P, NVTR4502P Power MOSFET V BR DSS −30 V, −1.95 A, Single, P−Channel, SOT−23 155 mW @ −10 V −30 V Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS(ON) for Low Conduction Losses SOT−23 Surface Mount for Small Footprint (3 X 3 mm)

ntr4503nt1

Contextual Info: Product specification NTR4503N Power MOSFET ID MAX 85 mW @ 10 V 30 V Features • • • • RDS on TYP V(BR)DSS 30 V, 2.5 A, Single N−Channel, SOT−23 2.5 A 105 mW @ 4.5 V Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive

Contextual Info: Product specification NTR2101P Small Signal MOSFET V BR DSS RDS(on) Typ −8.0 V, −3.7 A, Single P−Channel, SOT−23 39 mW @ −4.5 V −8.0 V −3.7 A 52 mW @ −2.5 V Features • • • • ID Max 79 mW @ −1.8 V Leading Trench Technology for Low RDS(on)

DIODE A16

Abstract: NTR4101PT1G
Contextual Info: Product specification NTR4101P, NTRV4101P Trench Power MOSFET V BR DSS −20 V, Single P−Channel, SOT−23 Features • • • • • RDS(ON) TYP ID MAX 70 mW @ −4.5 V −20 V −3.2 A 90 mW @ −2.5 V Leading −20 V Trench for Low RDS(on) −1.8 V Rated for Low Voltage Gate Drive

900E-01

Contextual Info: NTR1P02LT1 Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical

Contextual Info: NTR1P02LT1, NTR1P02LT1H Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package http://onsemi.com These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical

Contextual Info: NTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features http://onsemi.com • Low RDS on Provides Higher Efficiency and Extends Battery Life • • RDSon = 0.80 W, VGS = −10 V RDSon = 1.10 W, VGS = −4.5 V Miniature SOT−23 Surface Mount Package Saves Board Space

NTR1P02LT1G

Abstract: NTR1P02LT1 NTR1P02LT3 NTR1P02LT3G
Contextual Info: NTR1P02LT1 Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical

NTR0202PL

Abstract: NTR0202PLT1 NTR0202PLT1G NTR0202PLT3 NTR0202PLT3G
Contextual Info: NTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features http://onsemi.com • Low RDS on Provides Higher Efficiency and Extends Battery Life • • RDSon = 0.80 W, VGS = −10 V RDSon = 1.10 W, VGS = −4.5 V Miniature SOT−23 Surface Mount Package Saves Board Space

NTR4501N

Abstract: NTR4501NT1 NTR4501NT1G NTR4501NT3 NTR4501NT3G
Contextual Info: NTR4501N Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23 Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Packages are Available

NTR4501NT

Abstract: Power MOSFET N-Channel sot-23 NTR4501NT1G transistor marking code SOT-23 MARKING QG 6 PIN sot-23 Marking 14 NTR4501N NTR4501NT1 NTR4501NT3 NTR4501NT3G
Contextual Info: NTR4501N Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23 Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Packages are Available

Contextual Info: Product specification NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 −30 V Features • • • • V BR DSS Low RDS(on) at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device

NTR4502PT1G

Abstract: NTR4502P NTR4502PT1 NTR4502PT3 NTR4502PT3G
Contextual Info: NTR4502P Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23 Features • • • • http://onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS ON for Low Conduction Losses SOT−23 Surface Mount for Small Footprint (3 X 3 mm)

NVTR1P02LT1

Abstract: NVTR1P02LT1G
Contextual Info: NTR1P02LT1, NVTR1P02LT1 Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package http://onsemi.com These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical

NTR4501N

Abstract: NTR4501NT1 NTR4501NT1G NTR4501NT3 NTR4501NT3G
Contextual Info: NTR4501N Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23 Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Packages are Available

marking TR1 SOT-23

Abstract: Power MOSFET N-Channel sot-23 NTR4501NT3G
Contextual Info: NTR4501N Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23 Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available

Contextual Info: NTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features • Low RDS on Provides Higher Efficiency and Extends Battery Life • • RDSon = 0.80 W, VGS = −10 V RDSon = 1.10 W, VGS = −4.5 V Miniature SOT−23 Surface Mount Package Saves Board Space

Contextual Info: NTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features • Low RDS on Provides Higher Efficiency and Extends Battery Life http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX −20 V 550 mW @ −10 V −400 mA Applications • • • •

NTR1P02LT1

Contextual Info: NTR1P02LT1 Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical