SONY 1310 Search Results

CXK581000M

Abstract: CXK581000P 15L15LL
Contextual Info: 54E D • &3B23&3 000475b TTT I SONY C X K 581000P/M SONY. -10L712U15L -10LLV12LU/15LL 131072-word X 8-bit High Speed CMOS Static RAM SONY C O R P / C O M P O N E N T PRODS Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8

Contextual Info: 5 ME » Ô3fl23fl3 OGG^GO 718 • S 0 N Y /^ r ^ _ ¿ 2¿>^/y C X K 7791 O J SONY 131072 words X - 17/20 9-bit Self-Timed Static Random Access Memory SONY CORP/COMPONENT PRODS Description The CXK7791 OJ is a 1,179,648 bit Self-Timed Static Random Access Memory organized as 128K words by 9

Sony CMOS

Abstract: CXK581000M CXK581000P CXK581000
Contextual Info: S4E D SONY, Û3Ô53Ô3 00D47b? 7fl5 «SONY C X K 581O O O P / M ÌoLLX/?2LLX^5LLX 131072-word X 8-bit High Speed CMOS Static RAM SONY CORP/COMPONENT PROPS Description The C X K 5 8 1 0 0 0 P /M is a general purpose high speed CMOS static RAM organized as 131072 words by 8 bits. Operating on a single

Contextual Info: SONY C O R P / C O M P O N E N T PRO DS fl3fl23fl 3 0 0 0 3 ^1 4 7 • SONY SOE D CXB1137Q/Q-Y SO N Y . 8-bit Shift Matrix Description Pin Assignm ent The C X B 1 1 3 7 Q is an ultra high speed m onolithic E C L 8-bit Shift M a trix Three Select Sn inputs

PE9071

Abstract: CXK77910J-17 CXK77910J-20 CXK7791OJ
Contextual Info: CXK77910J SONY. - 131072 words x 9-bit Self-Timed Static Random Access Memory 17/20 Preliminary Description The CXK77910J is a 1,179,648 bit Self-Timed Static Random Access Memory organized as 128K words by 9 bits. This STRAM integrates Input Registers, High Speed

CBEA

Abstract: register type register Sony Computer Entertainment
Contextual Info: SPU Assembly Language Specification Version 1.7 CBEA JSRE Series Cell Broadband Engine Architecture Joint Software Reference Environment Series July 18, 2008 Copyright International Business Machines Corporation, Sony Computer Entertainment Incorporated, Toshiba

CXK27C1000DQ-15

Abstract: 12.75V PGM 1N914 CXK27C1000DQ-20 CXK27C1000DQ
Contextual Info: CXK27C1OOODQ SONY. - 15/20 131072-word X 8-bit Ultraviolet Erasable CMOS PROM Description The CXK27C1 OOODQ ¡is an electrically programmable, ultraviolet erasable CMOS EPROM. The adoption o f CMOS fo r the peripheral circuits allows fo r high speed operation and low power

Contextual Info: CXK77910J SONY» 131072 words x 9-bit Self-Timed Static Random Access Memory -17/20 PrelifTlinQry Description The CXK77910J is a 1,179,648 bit Self-Timed Static Random Access Memory organized as 128K words by 9 bits. This STRAM integrates Input Registers, High Speed

P0820A

Contextual Info: SONY CXK581000ATM/AYM/AM/AP -55SL/70SL/1OSL 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by CXK581000ATM CXK581000AYM 32 pin TSOP Plastic 32 pin TSOP (Plastic)

STR G 6351

Abstract: db16cyc cell broadband TH1000 TH1010 sfh 6176 CBEA
Contextual Info: C/C+ Language Extensions for Cell Broadband Engine Architecture Version 2.6 CBEA JSRE Series Cell Broadband Engine Architecture Joint Software Reference Environment Series August 25, 2008 Copyright International Business Machines Corporation, Sony Computer Entertainment Incorporated, Toshiba

Contextual Info: SONY CXP875P40 CMOS 8-bit Single Chip Microcomputer Description The CXP875P40 is a CMOS 8-bit micro-computer which consists of arithmetic coprocessor, A/D converter, serial interface, timer/counter, time base timer, vector interruption, high precision timing

Contextual Info: SONY CXK5T81OOOATM/AYM/AM/ATN/AYN -10LLX/12LLX 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATM/AYM/AM/ATN/AYN is a high speed CMOS static RAM organized as 131072words by 8-bits. Special feature are low power consumption and high speed.

IJ01

Abstract: CXK581000AYM CXK581OQOATM CXKS81003ATM SCHB
Contextual Info: SONY CXK581OOOATM/AYM/AM -10LLB 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581 OOOATM/AYM/AM is a high speed CMOS static RAM organized as 131072 words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data

Contextual Info: Sony. CXK 58110O TM /YM IS Ö W 131072-word X 8-bit High Speed CMOS Static RAM D escription CXK58110OTM/YM is a 1M bits, 131072 words by 8 bits, CMOS static RAM. It is suitable for portable and CXK581100TM 32 pin TSOP Plastic CXK581100YM 32 pin TSOP (Plastic)

A13G

Abstract: CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe
Contextual Info: SONY | CXK5T81OOOATN/AYN - 1 0 L L X / 1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATN/AYN is a high Preliminary speed CMOS static RAM organized as 131072-words by 8 -bits. Special feature are low power consumption and

Contextual Info: C X K 58110OTM/YM -12LB SONY 131072-word x 8-bit High Speed CMOS Static RAM Description CXK581100TM/YM is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. CXK581100TM 32 pin T SO P Plastic CXK581100YM 32 pin T SO P (Plastic)

Contextual Info: SONY | CXK5T81OOOATN/AYN - 1 O L L X /1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Preliminary Description The CXK5T81 OOOATN/AYN is a high speed CMOS static RAM organized as 131072-words by 8-bits. Special feature are low power consumption and

icc3 icc1

Contextual Info: SONY CXK581OOOATM/AYM/AM -10LLB 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581 OOOATM/AYM/AM is a high speed CMOS static RAM organized as 131072 words by 8 bits. A polysilicon T F T cell technology realized extremely low stand-by current and higher data

c00f

Contextual Info: CXK58110OTM/YM •12LB SONY« 131072-word x 8-bit High Speed CMOS Static RAM Description CXK581100TM/YM is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. C X K 581100TM 32 pin TSO P Plastic C XK 58110OYM 32 pin TSO P (Plastic)

CXK581020A

Abstract: CXK581020AJ-25 SCU032-P-C400-A
Contextual Info: SONY C X K 581020A J • ” *» 131072-words x 8-bits High Speed CMOS Static RAM Description 32 pin SO J Plastic The CXK581020AJ is a high speed CMOS static RAM organized as 131072-words by 8 bits. It operates at 20ns/25ns access time from 5V single power supply.

ci cd 4058

Abstract: MFC 4040 Tag 225 600 replacement 9c301 X00001000 X1E0000 511000 dram CBEA 511C5 mic 342
Contextual Info: Title Page Cell Broadband Engine Registers Version 1.51 September 18, 2007 Copyright and Disclaimer Copyright International Business Machines Corporation, Sony Computer Entertainment Incorporated, Toshiba Corporation 2005, 2007 All Rights Reserved Printed in the United States of America Sptember 2007

sony 5v

Abstract: "Pin compatible" SONY 32PIN CXK581120AJ-12 CXK581120AJ-15 Sony CMOS Sony
Contextual Info: SONY CXK581120AJ 131072-wards x 8-bits High Speed CMOS Static RAM - 12/15 Preliminary Description The CXK581120AJ is a high speed 1M bit CMOS static RAM organized as 131072 words by 8 bits. It operates at 12ns/15ns access time from a single 5V power supply, utilizing center-ground/power pin

Contextual Info: SONY CXK5V81OOOATM -8 5 L L X /1 0 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data

Contextual Info: SONY. CXK581OOOP/M -10LU12LL715LL 10L712L715L 131072-word X 8-bit High Speed CMOS Static RAM D escription CXK581 OOOP/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low