SOLDERING 96N Search Results

LQM18PN

Abstract: LQP03TG LQH2HPN100MJ LQH32PB1R0NNC LQH2HP 15H101 LQH44PN2R2M LQM18PN1R5 LQM21PN4R7 LQP coil
Contextual Info: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.

Contextual Info: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.

LQM18PN

Abstract: LQM21PN4R7 LQH55PN100MR LQH55PN LQW18CNR33j LQM2MPN LQM18PN1R5 LQW15CNR LQH5BPN1R5N LQH3NPN220
Contextual Info: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please review our product specifications or consult the approval sheet for product specifications before ordering.

96N30

Contextual Info: Advanced Technical Information PolarTM High Speed IXGQ 96N30PCD1 VCES = = IC25 VCE sat ≤ tfi = IGBT With Anti-Parellel Diode For PDP Applications Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VGES Continuous ±20 V VGEM Transient

Contextual Info: IXYK120N120C3 IXYX120N120C3 1200V XPTTM IGBTs GenX3TM VCES = IC110 = VCE sat  tfi(typ) = High-Speed IGBTs for 20-50 kHz Switching 1200V 120A 3.20V 96ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M

Contextual Info: Inductors Coils for Power Lines Data Sheet 1 LQW15CN_00 Series 0402/1005 (inch/mm) Wound Thickness General (No Shield) 0.6 mm max. Reflow RoHS OK c Packaging (0.1) 0.5±0.1 c Dimensions Code Packaging Minimum Quantity D ø180mm Paper Taping 10000 B Packing in Bulk

Contextual Info: Inductors Coils for Power Lines Data Sheet 1 LQW15CN_00 Series 0402/1005 (inch/mm) Wound Thickness General (No Shield) 0.6 mm max. Reflow RoHS OK c Packaging (0.1) 0.5±0.1 c Dimensions Code Packaging Minimum Quantity D ø180mm Paper Taping 10000 B Packing in Bulk

Contextual Info: Inductors Coils > Chip Inductor (Chip Coil) > Power Inductor (Wire Wound Type for Choke) Data Sheet 1 Chip Inductor (Chip Coil) Power Inductor (Wire Wound Type for Choke) LQW15C_00 Series (0402 Size) c Packaging (0.1) 0.5±0.1 c Dimensions Code Packaging

LQW15CNR

Abstract: LQW15CN LQW15CNR13J00 96nH
Contextual Info: Inductors Coils > Chip Inductor (Chip Coil) > Power Inductor (Wire Wound Type for Choke) Data Sheet 1 Chip Inductor (Chip Coil) Power Inductor (Wire Wound Type for Choke) LQW15C Series (0402 Size) c Packaging (0.1) 0.5±0.1 c Dimensions Code Packaging Minimum Quantity

Contextual Info: Inductors Coils > Chip Inductor (Chip Coil) > Power Inductor (Wire Wound Type for Choke) Data Sheet Chip Inductor (Chip Coil) 1 Power Inductor (Wire Wound Type for Choke) LQW15C Series (0402 Size) • Packaging (0.1) 0.5±0.1 ■ Dimensions Code Packaging

Contextual Info: 19-2790; Rev 4; 9/10 155Mbps to 2.5Gbps Burst-Mode Laser Driver ♦ ♦ ♦ ♦ ♦ Multirate Operation from 155Mbps to 2.5Gbps Burst Enable/Disable Delay <2ns Burst On-Time of 576ns to Infinity Infinite Bias-Current Hold Time Between Bursts DC-Coupled Operation with Single +3.3V Power

HFAN-02

Abstract: IEC825 MAX3656 MAX3656ETG 155-Mbps HFAN02
Contextual Info: 19-2790; Rev 4; 9/10 155Mbps to 2.5Gbps Burst-Mode Laser Driver ♦ ♦ ♦ ♦ ♦ Multirate Operation from 155Mbps to 2.5Gbps Burst Enable/Disable Delay <2ns Burst On-Time of 576ns to Infinity Infinite Bias-Current Hold Time Between Bursts DC-Coupled Operation with Single +3.3V Power

Contextual Info: 19-2790; Rev 3; 7/10 155Mbps to 2.5Gbps Burst-Mode Laser Driver ♦ ♦ ♦ ♦ ♦ Multirate Operation from 155Mbps to 2.5Gbps Burst Enable/Disable Delay <2ns Burst On-Time of 576ns to Infinity Infinite Bias-Current Hold Time Between Bursts DC-Coupled Operation with Single +3.3V Power

Contextual Info: R E5ZE-8j-E Multi-point Temperature Controller Control Up to Eight Zones, Provides Serial Communications H Applications include plastic injection and extrusion machines, and continuous temperature control processes H Fuzzy control can be used to enhance PID control response

HY57V654010

Abstract: RA12 875mil
Contextual Info: HY57V654010 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654010 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654010 is organized as 2banks of

HY57V654020

Abstract: Hyundai Semiconductor dram 875mil
Contextual Info: HY57V654020 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020 is organized as 4banks of

hy57v651620tc-10

Abstract: HY57V651620
Contextual Info: HY57V651620 4 Banks x 1M x 16 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651620 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651620 is organized as 4banks of

HY57V658020TC-10

Abstract: hy57v HY57V658020 HY57V658020TC-12
Contextual Info: HY57V658020 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658020 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020 is organized as 4banks of

HY57V651610TC10

Contextual Info: HY57V651610 2 Banks x 2M x 16 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651610 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651610 is organized as 2banks of

HY57V658010

Abstract: HY57V658010TC-10 HY57V658010TC-12
Contextual Info: HY57V658010 2 Banks x 4 M x 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V658010 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658010 is organized as 2banks of

Contextual Info: HY57V651610A 2 Banks x 2M x 16 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651610A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651610A is organized as 2banks of

dram 4mx4

Abstract: HY57V654020A Hyundai Semiconductor dram HY57V654020ATC-10S
Contextual Info: HY57V654020A 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020A is organized as 4banks of

Contextual Info: "H Y U N D A I - • HY57V654010 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V654010 is a 6 7 ,1 0 8 ,864-bit C M O S Synchronous D RA M ideally suited for the main memory appli­ cations which require large memory density and high bandwidth. H Y 57V654010 is organized as 2banks of

Contextual Info: »«YUWPA! > — - • HY57V658010 2 Banks x 4 M x 8 8 it Synchronous DRAM DESCRIPTION The Hyundai H Y57V 658010 is a 67,108, 864-bit C M O S Synchronous DRAM, ideally suited for the main memory appli­ cations which require large memory density and high bandwidth. H Y 57V 658010 is organized as 2banks of