SOJ028 Search Results

Contextual Info: SMALL OUTLINE J-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 28 PIN PLASTIC To Top / Package Lineup / Package Index LCC-28P-M04 EIAJ code :∗SOJ028-P-0400-3 28-pin plastic SOJ Lead pitch 50 mil Package width 300 mil Lead shape J bend Sealing method Plastic mold

Contextual Info: EXAMPLE & ORDERING CODE MATERIAL AND FINISH: ELECTRICAL SPECIFICATIONS: Housing: Current Rating: 1A per contact Mechanical Life: 25 cycles min. P.B.T.; glass filled UL 94V-0 Insulator Resistance: 10000 Megaohm min. Temperature: -55°C to 110°C Phosphor Bronze

Contextual Info: EXAMPLE & ORDERING CODE I r% o SPECIFICATIONS MATERIAL AND FINISH: ELECTRICAL SPECIFICATIONS: MECHANICAL SPECIFICATIONS: Housing: Material: Rating: Current Rating: 1A per contact Mechanical Life: 25 cycles min. Insulator Resistance: 10000 Megaohm min. Temperature: -55°C to 110°C

C2605

Abstract: LCC-26P-M04
Contextual Info: SMALL OUTLINE J-LEADED PACKAGE 26 PIN PLASTIC LCC-26P-M04 EIAJ code : ∗SOJ028-P-0400-3 Lead pitch 50mil Package width 300mil Lead shape J bend Sealing method Plastic mold 26-pin plastic SOJ LCC-26P-M04 * : Resin protrusion. (Each side : 0.15 (.006) max)

MN414400CSJ

Abstract: MN414400 mn414800csj 512k X 8 MN41V4400TT mn414100 MN41V4800TT MN414170CSJ MN414400BL
Contextual Info: MOS Memories • 4MDRAMS 5V V6rsi0n Organi­ zation (words X bits) 4M X I 1M X4 512k X8 256k X16 Type No. Supply voltage: 4.5 ~5.5V Access time Cycle time max. (ns) min. (ns) Refresh (cycles/ms) Maximum Supply Current Active (mA) Standby (M A) Package Remarks

SOJ028-P

Contextual Info: SMALL OUTLINE J-LEADED PACKAGE 28 PIN PLASTIC LCC-28P-M05 EIAJ code : ∗SOJ028-P-0400-2 28-pin plastic SOJ Lead pitch 50mil Package width 400mil Lead shape J bend Sealing method Plastic mold LCC-28P-M05 * : Resin protrusion. (Each side : 0.15 (.006) max)

Contextual Info: SMALL OUTLINE J-LEADED PACKAGE 28 PIN PLASTIC LCC-28P-M07 EIAJ code : ∗SOJ028-P-0400-4 28-pin plastic SOJ Lead pitch 50mil Package width 400mil Lead shape J bend Sealing method Plastic mold LCC-28P-M07 * : Resin protrusion. (Each side : 0.15 (.006) max)

Contextual Info: SMALL OUTLINE J-LEADED PACKAGE 28 PIN PLASTIC LCC-28P-M04 EIAJ code : ∗SOJ028-P-0400-3 Lead pitch 50mil Package width 300mil Lead shape J bend Sealing method Plastic mold 28-pin plastic SOJ LCC-28P-M04 * : Resin protrusion. (Each side : 0.15 (.006) max)

Contextual Info: SMALL OUTLINE J-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 28 PIN PLASTIC To Top / Package Lineup / Package Index LCC-28P-M07 EIAJ code :∗SOJ028-P-0400-4 28-pin plastic SOJ Lead pitch 50 mil Package width 400 mil Lead shape J bend Sealing method Plastic mold

26-pin

Contextual Info: SMALL OUTLINE J-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 26 PIN PLASTIC To Top / Package Lineup / Package Index LCC-26P-M04 EIAJ code :∗SOJ028-P-0400-3 26-pin plastic SOJ Lead pitch 50 mil Package width 300 mil Lead shape J bend Sealing method Plastic mold

ITT ZD15

Abstract: transistor 6cn P018-P-0300A itt ZD20 SSOP-016-P diode i321 ZD21 B91 02 diode TSOP044-P0400A h322
Contextual Info: utlines MOS LSIs • D I P I 'a c K a g e s L1 (8-DIP). Unit: mm DIPQ08-P-0300 L2 (8-DIP (Special), *DIP014-P-0300C j .7 ip; I ]6|° 1Ü 2L 3C 4[ I ]7 i i ]5 (12-DIP(Special), *DIP012-P-0300(Special) lc - ? 6 .4 ” 0 . 2 È — ls 3. ¿ u. i '0 . 7 m in. ¡

N42C

Abstract: N41C MN41256a N41257A-08 N4146 4141-00 41410 TSOP044-P0400A N4141
Contextual Info: MOS Memories • Dynamic RAMs Memory Size Type No. bit Memory A ccess C ycle Refresh Supply C om position Tim e Tim e C ycle Voltage (W ord X bit) max. (ns) min. (ns) (cycle/m s) (V) O perating S tand-by 262,144 X 1 80 160 256/4ms 4.5 ~ 5.5 440 16.5 DIPOI 6-P-0300A

Contextual Info: SMALL OUTLINE J-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 28 PIN PLASTIC To Top / Package Lineup / Package Index LCC-28P-M06 EIAJ code :∗SOJ028-P-0400-3 28-pin plastic SOJ Lead pitch 50 mil Package width 400 mil Lead shape J bend Sealing method Plastic mold

SOJ028-P-0300-A

Contextual Info: CXK58258AP/AJ -15/20/25 SONY» 32,768-word X 8-bit High Speed CMOS Static RAM D escription The C X K 5 8 2 5 8 A P /A J is a high speed CMOS sta tic RAM w hich consists o f 32,768-w ord x 8-bit. It operates a t 1 5 / 2 0 / 2 5 n s access tim e fro m 5V single pow er supply.

MN414400CSJ

Abstract: mn414400 MN414400CTT MN414260CSJ MN414260 MN414800 MN414170CSJ MN414800CSJ MN424400CSJ MN414270CSJ
Contextual Info: • Dynamic RAMs # 4M DRAMs 5V version Maximum Supply Current Organization (words Xbits) Type No. Access time Cycle time max (ns) min (ns) 256KX16 Active (mA) CBR self refresh OiA) Package Remarks No. MN414400CSJ 60/70 110/130 1024/16 85/75 - SOJ026-P-0300A

Contextual Info: SMALL OUTLINE J-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 28 PIN PLASTIC To Top / Package Lineup / Package Index LCC-28P-M05 EIAJ code :∗SOJ028-P-0400-2 28-pin plastic SOJ Lead pitch 50 mil Package width 400 mil Lead shape J bend Sealing method Plastic mold

Contextual Info: SMALL OUTLINE J-LEADED PACKAGE 28 PIN PLASTIC LCC-28P-M06 EIAJ code : ∗SOJ028-P-0400-3 Lead pitch 50mil Package width 400mil Lead shape J bend Sealing method Plastic mold 28-pin plastic SOJ LCC-28P-M06 * : Resin protrusion. (Each side : 0.15 (.006) max)

Contextual Info: MITSUBISHI LSIs M5M5V278DP,J,VP-15,-20 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 5M 5V278D is a fam ily of 32768-wordby 8-bit static RAMs, fabricated with the high-perform ance CMOS siiicon-gate MOS Vcc(3.3V)

DIP014-P-0300D

Abstract: B92 62 diode pa c12 100 12p P050P ip022 TSOP050-P
Contextual Info: 172 MOS Memories M H O 188 CCD Area Image Sensors (C □ □ ) 193 CCD Area/Linear Image Sensors (C □ □ ) 194 CCD Camera Modules/TFT LCD Devices (C D D ) 196 Bipolar ICs (B DD) 197 Discrete Semiconductors (D DD) 212 171 O u tlin e s MOS LSIs (L E O )