SOIC8 PACKAGE Search Results

C1608X7R1H473K

Abstract: PCB yageo smd 1206 capacitor 18 pf capacitor smd tdk 9C06031A1000FKHFT NCS2500 NCS2502 EXCML32 PCB yageo smd 1206 NCS2501 108-0740-001
Contextual Info: OPAMP1EVB Op Amp Evaluation Board Manual SOT23, SC70, and SOIC8 Package http://onsemi.com Description This document describes the SOT23, SC70, and SOIC8 package Op Amp evaluation board. It should be used in conjunction with the appropriate data sheet which contains

EIA-481-2

Abstract: CNY17-3X009T 521 optocoupler 4 pin optocoupler 521 IL207AT ILD207T SFH6156-3T CNY173X009T 8 channel optocouplers CNY17-3X007T
Contextual Info: Tape and Reel Packaging for Single Channel SOIC8 Optocouplers All SOIC8 optocouplers are available in tape and reel format. To order any surface mount IL2XXA optocoupler on tape and reel, add a suffix “T” after the part number, i.e., IL207AT. 10 Pitches Cumulative

2 way splitter, circuit diagram

Abstract: DS53-0001-TR 3way splitter, circuit diagram 8088 ram DS53-0001
Contextual Info: Low Cost Three-Way Power Splitter/Combiner — 824-960 MHz DS53-0001 DS53-0001 Low Cost Three Way Power Splitter/Combiner 824 - 960 MHz Features • • • • • • SOIC8 Small Size and Low Profile Industry Standard SOIC8 SMT Plastic Package Excellent Insertion Loss 0.6 dB Typical

Contextual Info: Ordering number : ENA0273B FW4604 N-Channel Power MOSFET http://onsemi.com 30V, 6A, 39mΩ, –30V, –4.5A, 65mΩ, Complementary Dual SOIC8 Features • On-state resistance • 4.5V drive Halogen free compliance Nch + Pch MOSFET Protection diode in • •

Contextual Info: GaAs SPST Matched Switch 0.6-1.1 GHz Features • • • • • SW-349 93 SO-8 Operates with +3 volts control Very Low Power Consumption Matched Input and Output Low Cost SOIC8 Plastic Package Tape and Reel Packaging A vailable1 .2284-,2440 5.80-6.20 ,1497-.1574

Contextual Info: Allegro New Product News NR11xD/E/K Series Light Load High Efficiency, 31V Buck Regulator NR11xD/E/K Series, Light Load High Efficiency, Buck Regulator IC Package DIP8 Thermally enhanced HSOP8 SOIC8 Schematic Diagram R1 C2 D2 Option Current Sense Amp Σ

Contextual Info: Io=1A,Vin=27V, eSOIC8 Linear Regulator IC NR301E Sep./19/2014 Package General Descriptions NR301E is the low saturation voltage type Io=1.0A linear regulator IC built in the exposed SOIC8 package. The output voltage Vo is adjustable by the external resistor.

Contextual Info: Io=1A,Vin=27V, eSOIC8 Linear Regulator IC NR301E Sep/19/2013 Package General Descriptions NR301E is the low saturation voltage type Io=1.0A linear regulator IC built in the exposed SOIC8 package. The output voltage Vo is adjustable by the external resistor.

compliance matrix

Abstract: datadelay
Contextual Info: Data Delay Devices, Inc 3 Mount Prospect Ave Clifton, NJ 07013 Tel: 973-773-2299 Fax: 973-773-9672 www.datadelay.com Monolithic RoHS-Compliance Matrix as of 3/7/2013 SMD Package ID Series Z D R S SOIC8 SOIC14 SOIC16 SOL16 3D3215 0901 Y 3D3220 Y Y 3D3225

30414

Contextual Info: Ordering number : ENA2289 FW276 N-Channel Power MOSFET 450V, 0.7A, 12.1Ω, Dual SOIC8 http://onsemi.com Features • On-resistance RDS on =9.3Ω(typ.) • Input capacitance Ciss=55pF(typ.) • 10V drive • Nch+Nch dual MOSFET • Halogen free compliance

Contextual Info: Ordering number : ENA1067 TIG067SS N-Channel IGBT http://onsemi.com 400V, 150A, VCE sat ;3.8V Single SOIC8 Features • • • Low-saturation voltage Enhansment type High speed switching • • • 4.0V drive Built-in Gate-to-Emitter protection diode Halogen free compliance

dimension SOIC8 package

Contextual Info: PACKAGE OUTLINE DRAWING SOIC8 MF-PO-D-0001 revision 2.0 TM Monolithic Power Systems TM 0.229 5.820 0.244(6.200) PIN 1 IDENT. NOTE 3 0.150(3.810) 0.157(4.000) 0.0075(0.191) 0.0098(0.249) SEE DETAIL "A" 0.011(0.280) x 45o 0.020(0.508) 0.013(0.330) 0.020(0.508)

Contextual Info: TAPE AND REEL SPECIFICATIONS SOIC8 CARRIER TAPE OUTLINE MF-PO-D-0015 revision 0.0 TM Monolithic Power Systems TM PACKAGE ORIENTATION www.MonolithicPower.com Copyright 2005 MPS. All Rights Reserved. ABCD Notes: 1. Measured from the centerline of sprocket hole to centerline of the pocket hole

IAV2A

Contextual Info: Ordering number : ENA2066A FW389 Power MOSFET 100V, 2A, 225mΩ, –100V, –2A, 300mΩ, Complementary Dual SOIC8 http://onsemi.com Features • Input Capacitance Nch : Ciss=490pF typ. • ON-resistance Nch : RDS(on)1=165mW(typ.) Pch : RDS(on)1=230mW(typ.)

AT-108-PIN

Contextual Info: A fa Voltage Variable Absorptive Attenuator. 40 dB AT-108 0.5-2 GHz July ’93 Features • • • • • • SO-8 Single Positive Voltage Control 40 dB Attenuation Range at 0.9 GHz ±2 dB Linearity from B.S.L. Low DC Power Consumption Low Cost SOIC8 Plastic Package

Contextual Info: Ordering number : ENA0176B FW216A N-Channel Power MOSFET http://onsemi.com 35V, 4.5A, 64mΩ, Dual SOIC8 Features ON-resistance Nch : RDS on 1=49mΩ (typ.) 4.0V drive Halogen free compliance • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter

semiconductor A 6060

Contextual Info: MMA719 4 Watt InGaP HBT Amplifier 6060 OUTLINE SOIC8 OUTLINE Description: Features: The MMA719-6060 is a Power InGaP HBT device that is designed to provide moderate power levels from 100 MHz to 2.5 GHz. Best operation is obtained across narrow bandwidths, typically 10%. The device is characterized

Contextual Info: MMA728 2 Watt InGaP HBT Amplifier 3030 OUTLINE SOIC8 OUTLINE Description: Features: The MMA728-3030 is a Power InGaP HBT device that is designed to provide moderate power levels from 100 MHz to 2.5 GHz. Best operation is obtained across narrow bandwidths, typically 10%. The device is characterized

SOic8 package

Contextual Info: MMA729 4 Watt InGaP HBT Amplifier 6060 OUTLINE SOIC8 OUTLINE Description: Features: The MMA729-6060 is a Power InGaP HBT device that is designed to provide moderate power levels from 100 MHz to 2.5 GHz. Best operation is obtained across narrow bandwidths, typically 10%. The device is characterized

Contextual Info: Ordering number : EN8998C FW344A Power MOSFET http://onsemi.com 30V, 4.5A, 64mΩ, –30V, –3.5A, 102mΩ, Complementary Dual SOIC8 Features • • • • ON-resistance Nch : RDS on 1=49mΩ(typ.) Pch : RDS(on)1=78mΩ(typ.) 4V drive Halogen free compliance

Contextual Info: AWB688 DC ~ 1500 MHz Wideband MMIC Amplifier Features  DC ~ 1200 MHz, 50  Application  For 30 ~ 860 MHz 50  Matching @ Vdevice = +10 V, Idd = 300 mA:  22.8 dB Gain at 500 MHz  30 dBm OP1dB  45.5 dBm Output IP3  2.2 dB NF AWB688 Package Style: SOIC8

Contextual Info: Ordering number : ENA2066 FW389 Power MOSFET http://onsemi.com 100V, 2A, 225mΩ, –100V, –2A, 300mΩ, Complementary Dual SOIC8 Features • • • • ON-resistance Nch : RDS on 1=165mΩ(typ.) Pch : RDS(on)1=230mΩ(typ.) 4V drive Halogen free compliance

Contextual Info: Ordering number : EN8994B FW217A N-Channel Power MOSFET http://onsemi.com 35V, 6A, 39mΩ, Dual SOIC8 Features • • • • On-state resistance RDS on 1=30mΩ (typ.) 4.5V drive Halogen free compliance Protection Diode in Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : ENA0273B FW4604 Power MOSFET 30V, 6A, 39mΩ, –30V, –4.5A, 65mΩ, Complementary Dual SOIC8 http://onsemi.com Features • On-state resistance • 4.5V drive Halogen free compliance Nch + Pch MOSFET Protection diode in • • • Nch : RDS on 1=30mΩ(typ.)