SOI SWITCHES 2003 Search Results

EM4222

Abstract: soi switches 2003 Linear SOI switch body RF 2003 tinella RF low power hearing aids car Speed Sensor using RFID UHF RFID passive tag CMOS microwave distance sensors silicon on insulator FDSOI TECHNOLOGY
Contextual Info: OCTOBER 2003 RFDESIGN RF AND MICROWAVE TECHNOLOGY FOR DESIGN ENGINEERS Why all the buzz about SOI? Silicon-on-insulator technology offers solutions to the higher-performance and lower-power dilemma Digital Systems: New two-antenna handset technology improves CDMA

Choosing the Right RF Switches for Smart Mobile Device Applications

Contextual Info: November 2011 Choosing the Right RF Switches for Smart Mobile Device Applications By Skyworks Solutions, Inc. Abstract: Modern smart phones and tablet computers typically incorporate multiple wireless services at different frequency bands ranging from FM radio to LTE. At the same time, an increasing number of designs utilize more than

E3081

Abstract: HT2080 CINOX OSCILLATOR CMOS technology length 0.4um 12GE 88Au HT1104HZ HT2160 IC CD4066 quad bilateral switch HTMOS
Contextual Info: High Temperature Electronics for Sensor Interface and Data Acquisition Sensors Expo, October 7, 1998 Jay Goetz – Applications Engineer Honeywell SSEC 12001 St Hwy 55 Plymouth MN 55441 612 954-2520 jay.goetz@corp.honeywell.com Introduction High Temperature designs need components rated to operate in the harsh environment in which they will be

PE42480

Contextual Info: 2014-2015 High-Performance Analog Product Catalog Welcome to Peregrine Semiconductor Peregrine Semiconductor NASDAQ: PSMI , founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding

body contact FET soi RF switch

Abstract: be68 Inselek SOI switch "body contact" RF FET solar panels in satellites tol72 mini circulator rg213 CABLE COAX soi switches 2003 body contact soi FET
Contextual Info: S pecial R eport UltraCMOS RFICs Ease the Complexity of Satellite Designs C ommercial and military satellites require cost-effective ICs that meet stringent high-reliability standards. In addition, they need to provide distinct advantages that allow designers to advance satellite

Inselek

Abstract: Boeing NOW JERSEY SEMICONDUCTOR PHYSICS Mueller Electric Company soi switches 2003 soi switches cmos transistor 1972
Contextual Info: W hat is Silicon-on-Sapphire? Silicon-on-Sapphire SOS is one of the siliconon-insulator (SOI) semiconductor manufacturing technologies. In fact, SOS is the first of the SOI technologies. SOS is formed by depositing a thin layer of silicon onto a sapphire wafer at high temperature.

digital dts dolby 5.1 ic amplifier circuits

Abstract: 5.1 home theatre circuit diagram digital dts dolby 5.1 ic 5.1 home theatre basic diagram 2.1 to 5.1 home theatre circuit diagram 5.1 surround sound dolby circuits BEST BASS TREBLE for home theater 5.1 home theatre audio system diagram for making 5.1 home theatre schematic diagram 5.1 channel surround sound IC
Contextual Info: PRELIMINARY DATA SHEET MICRONAS MAS 35xyH Audio Decoder IC Family SURROUND P R O L O G I C II SPATIALIZER N-2-2 ULTRATM D I G I T A L Edition Dec. 4, 2003 6251-589-1PD MICRONAS MAS 35xyH PRELIMINARY DATA SHEET Contents Page Section Title 5 5 6 7 1. 1.1. 1.2.

digital dts dolby 5.1 ic amplifier circuits

Abstract: 5.1 home theatre basic diagram 7.1 channel assembled home theater circuit diagram 5.1 home theatre audio system diagram for making 5.1 home theatre schematic diagram MSP44x0G dolby digital dts decoder prologic II 5.1 circuit diagram 5.1 home theatre circuit diagram dolby digital 5.1 surround sound dolby pcb
Contextual Info: PRELIMINARY DATA SHEET MICRONAS MAS 35xyH Audio Decoder IC Family SURROUND P R O L O G I C II SPATIALIZER N-2-2 ULTRATM D I G I T A L Edition Dec. 4, 2003 6251-589-2PD MICRONAS MAS 35xyH PRELIMINARY DATA SHEET Contents Page Section Title 5 5 6 7 1. 1.1. 1.2.

gps exact um

Abstract: navstar jammer circuit diagram mobile jammer circuit gps cellular "vehicle tracking" 1995 car signal jammer GPS chip integrat phased array antenna MICROWAVE DEVICES
Contextual Info: DefenseElectronics Highly Integrated GPS Receiver Overcomes Jamming, Pinpoints Location From RF CMOS silicon-on-sapphire SOS technology, a monolithic low-power, radiation hardened GPS front-end — designed to overcome jamming has been developed for military/aerospace applications.

TAG 302-600

Abstract: PE42924
Contextual Info: Changing RF Design. Forever. TM 2013 Commercial Products Product Selection Guide First Edition Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor NASDAQ: PSMI is a fabless provider of high-performance radio-frequency (RF)

HRF-SW1001

Abstract: GMJ00004 HRF-SW1001-B HRF-SW1001-E HRF-SW1001-TR soi switches 2003 ECUE1C103KBQ
Contextual Info: HRF-SW1001 SPDT Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.1dB @ 2 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O Single Positive Supply Voltage

HRF-SW1022

Abstract: HRF-SW1022-B HRF-SW1022-E HRF-SW1022-TR
Contextual Info: HRF-SW1022 Advance Information SP4T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 3 GHz Insertion Loss Of 2.0dB @ 2 GHz DC To 6 GHz Operating Frequency Integrated CMOS Control Logic, with all OFF mode Integrated ESD Protection on Digital I/O

Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM

Abstract: TPC2A Alcatel-Lucent
Contextual Info: Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM A.Y.-K. Chen Presented is the performance of a highly integrated RF single-pole double-throw SPDT switch fabricated in a 0.18 µm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes

HRF-SW1000

Abstract: HRF-SW1000-E GMJ00004 HRF-SW1000-B HRF-SW1000-TR
Contextual Info: HRF-SW1000 SPDT Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.1dB @ 2 GHz DC To 4GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O Single Positive Supply Voltage

4x4 ecu

Abstract: LPCC 4x4 24 rf attenuator 0.5-1.5 ghz conventional cmos GMJ00004 HRF-SW1030 HRF-SW1030-B HRF-SW1030-E HRF-SW1030-TR Attenuator chip
Contextual Info: HRF-SW1030 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.8 dB @ 1 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O

GMJ00004

Abstract: HRF-SW1021 HRF-SW1021-B HRF-SW1021-E HRF-SW1021-TR soi switches 2003 ECUE1C103KBQ ECU-E1C103KBQ
Contextual Info: HRF-SW1021 Preliminary SP4T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.35dB @ 1 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O

1031W

Abstract: ECU-E1C103KBQ 4x4 ecu GMJ00004 HRF-SW1030 HRF-SW1031 HRF-SW1031-B HRF-SW1031-E HRF-SW1031-TR
Contextual Info: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.8 dB @ 1 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O

Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

Abstract: 180NM IBM
Contextual Info: IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 11, NOVEMBER 2011 2613 Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Zhan-Feng Zhou, Chun-Wen Paul Huang, Member, IEEE, Christophe Masse, and John D. Cressler, Fellow, IEEE

PE4246

Contextual Info: Product Specification PE4246 Absorptive SPST UltraCMOS RF Switch: DC - 5000 MHz Product Description The PE4246 RF Switch is designed to cover a broad range of applications from DC to 5000 MHz. It is non-reflective at both RF1 and RF2 ports. This SPST switch integrates a single-pin

dfn 3x3 footprint

Abstract: dfn footprint
Contextual Info: Product Specification PE4246 Absorptive SPST UltraCMOS RF Switch: 1 - 5000 MHz Product Description The PE4246 RF Switch is designed to cover a broad range of applications from 1 to 5000 MHz. It is non-reflective at both RF1 and RF2 ports. This SPST switch integrates a single-pin

Contextual Info: Product Specification PE4246 Absorptive SPST UltraCMOS RF Switch: 1 - 5000 MHz Product Description The PE4246 RF Switch is designed to cover a broad range of applications from 1 to 5000 MHz. It is non-reflective at both RF1 and RF2 ports. This SPST switch integrates a single-pin

Contextual Info: Product Specification PE4246 Absorptive SPST UltraCMOS RF Switch: DC - 5000 MHz Product Description The PE4246 RF Switch is designed to cover a broad range of applications from DC to 5000 MHz. It is non-reflective at both RF1 and RF2 ports. This SPST switch integrates a single-pin

RF Switches

Abstract: PE4246
Contextual Info: Product Specification PE4246 Absorptive SPST UltraCMOS RF Switch: 1 - 5000 MHz Product Description The PE4246 RF Switch is designed to cover a broad range of applications from 1 to 5000 MHz. It is non-reflective at both RF1 and RF2 ports. This SPST switch integrates a single-pin

dfn 3x3 footprint

Abstract: dfn footprint
Contextual Info: Product Specification PE4246 Absorptive SPST UltraCMOS RF Switch: DC - 5000 MHz Product Description The PE4246 RF Switch is designed to cover a broad range of applications from DC to 5000 MHz. It is non-reflective at both RF1 and RF2 ports. This SPST switch integrates a single-pin