SOI 1998 SWITCH Search Results

kf 8715

Abstract: 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96
Contextual Info: HFA3101 Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

HFA3101

Abstract: 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair
Contextual Info: HFA3101 TM Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

northrop

Abstract: NGC3575 NGC3573 NGC3574 SOI 1998 Switch MIL-STD-883A Northrop Grumman 357498 soi switches
Contextual Info: 3UHOLPLQDU\ NGC3573 / NGC3574 / NGC3575 Radiation Hardened CMOS Analog Switches Northrop Grumman Corporation April 1998 Features      NGC3573 D3 NC • CMOS analog switching allows rail to rail operation and low switch impedance NC • 40 V maximum operating voltage Nominal: ±15V

Contextual Info: HIGH PERFORMANCE SOI/Cu SRAMs AND MEMORIES IN MICROPROCESSORS INVITED R. V. Joshi, S. Kang*, C. T. Chuang, G. Shahidi IBM Research Division, T. J. Watson Research Center, Yorktown Heights,NY 10598 * Aavid Thermalloy LLC, Concord, NH 03301 (rvjoshi@us.ibm.com, 914-945-1118)

Modeling of SOI FET for RF Switch Applications

Contextual Info: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is

E3081

Abstract: HT2080 CINOX OSCILLATOR CMOS technology length 0.4um 12GE 88Au HT1104HZ HT2160 IC CD4066 quad bilateral switch HTMOS
Contextual Info: High Temperature Electronics for Sensor Interface and Data Acquisition Sensors Expo, October 7, 1998 Jay Goetz – Applications Engineer Honeywell SSEC 12001 St Hwy 55 Plymouth MN 55441 612 954-2520 jay.goetz@corp.honeywell.com Introduction High Temperature designs need components rated to operate in the harsh environment in which they will be

Contextual Info: MITSUBISHI Neh POWER MOSFET FL7KM-12A HIGH-SPEED SWITCHING USE FL7KM-12A OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 à • 10V DRIVE • V d s s . 600V rD S ON ( M A X ) . 1 .3D.

Contextual Info: MITSUBISHI Neh POWER MOSFET FS16KMA-4A HIGH-SPEED SWITCHING USE FS16KMA-4A OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 1 • 10V DRIVE • V d s s . .200V • rDS ON (M AX). . 0.25Í2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS12UMA-4A HIGH-SPEED SWITCHING USE FS12UMA-4A OUTLINE DRAWING Dimensions in mm X < ® Q ©© © GATE © DRAIN ® SOURCE © DRAIN • 10V • V d s s .2 0 0 V

Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • • • • • PBYR2045CTF, PBYR2045CTX series SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance

Contextual Info: MITSUBISHI Neh POWER MOSFET FS20UMA-4A HIGH-SPEED SWITCHING USE FS20UMA-4A OUTLINE DRAWING Dimensions in mm X < Q ® © © ©G ATE © DRAIN ® SOURCE © DRAIN • 10V D R IV E • V d s s . . 2 0 0 V • rDS ON (M AX).

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10UMA-4A HIGH-SPEED SWITCHING USE FS10UMA-4A OUTLINE DRAWING D im ensions in mm X < ® Q ©© • ©GATE © DRAIN ® SOURCE © DRAIN 10V D R IV E • V d s s . .2 0 0 V • rDS ON (M A X ).

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KMA-4A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 TO-220FN APPLICATION Cs Sw itch for CRT D isplay m onitor, Sw itch mode power supply, etc. MAXIMUM RATINGS Symbol Tc = 2 5°C Ratings

SOT186A package

Abstract: Tj-102
Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • • • • • PBYR1545CTF, PBYR1545CTX series SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance

Contextual Info: MITSUBISHI Neh POWER MOSFET F L 1 2 K M -1 2 A HIGH-SPEED SWITCHING USE FL12KM -12A OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 • 10V DRIVE . 600V • V d s s • rD S O N ( M A X ) .

Contextual Info: MITSUBISHI Neh POWER MOSFET FS16UMA-4A HIGH-SPEED SWITCHING USE FS16UMA-4A OUTLINE DRAWING Dimensions in mm X < ® Q ©© ©G ATE © D R A IN ® SOURCE © D R A IN • 10V • V d s s .2 0 0 V

Contextual Info: MITSUBISHI Neh POWER MOSFET F L 1 0 K M -1 2 A HIGH-SPEED SWITCHING USE FL10KM -12A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 10V DRIVE • V d s s . 600V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS20KMA-4A HIGH-SPEED SWITCHING USE FS20KMA-4A OUTLINE DRAWING D im e n s io n s in m m 10 ± 0 .3 • 10V • V d s s . 2 0 0 V •

Contextual Info: MITSUBISHI Neh POWER MOSFET FS12KMA-4A HIGH-SPEED SWITCHING USE FS12KMA-4A OUTLINE DRAWING D im ensions in mm 10 ±0.3 2.8 ±0.2 4 • 10V DRIVE • V . .200V • rDS ON (M A X ). .0.40Í2

Contextual Info: MITSUBISHI Neh POWER MOSFET FL16KM-6A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 • 10V DRIVE . 300V • V • rDS ON ( M A X ) .

Choosing the Right RF Switches for Smart Mobile Device Applications

Contextual Info: November 2011 Choosing the Right RF Switches for Smart Mobile Device Applications By Skyworks Solutions, Inc. Abstract: Modern smart phones and tablet computers typically incorporate multiple wireless services at different frequency bands ranging from FM radio to LTE. At the same time, an increasing number of designs utilize more than

Contextual Info: RMO2D-2 Novel Silicon-on-Insulator SP5T Switch-LNA Front-end IC Enabling Concurrent Dual-band 256-QAM 802.11ac WLAN Radio Operations Chun-Wen Paul Huang, Joe Soricelli, Lui Lam, Mark Doherty, Phil Antognetti, and William Vaillancourt Skyworks Solutions, Inc., Andover, MA 01810, USA

SiS 6215

Abstract: 8025g sis7016 pci 6254 44PIN SiS7014
Contextual Info: SiS7014 Single Chip 100Base-TX/10Base-T Physical Layer Solution SiS7014 Single Chip 100Base-TX/10Base-T Physical Layer Solution Preliminary Revision 1.0 January 18,1998 Silicon Integrated Systems Corp. This specification is subject to change without notice.

TLP751

Abstract: E67349 TLP750 VDE0884
Contextual Info: TO SHIBA TLP751 TOSHIBA PHOTOCOUPLER G a A M s IRED +PHOTO IC TLP751 DIGITAL LOGIC GROUND ISOLATION LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES SWITCHING PO W ER SUPPLY FEEDBACK CONTROL ANALOG SIGNAL ISOLATION The TOSHIBA TLP751 Consists of GaA£As high-output light