SO8 WIDE Search Results

OF TL084 OPAMP

Abstract: audio Amp. mosfet 1000 watt 3000 Watt BTL Audio Amplifier AUDIO AMPLIFIER 140 WATT MOSFET 24v 5 amp smps TDA2320A replacement DC MOTOR DRIVE WITH LM324 NE555 IGBT DRIVER TSM1001 lm336 sot23
Contextual Info: Standard linear portfolio From innovative devices to application specific products Package Flip chip DFN8 Mini SO8 SO8 S014/16 SO20 SO24 batwing SOT23-3/5 TO92 TQFP44/48 TSSOP8 TSSOP14/16 TSSOP28 Tape width mm Qty/reel (min.order qty) Lead-free available

so8 footprint

Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
Contextual Info: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon

SOT1023

Abstract: lfpak sot1023 sot669 footprint LFPAK footprint so8 footprint PSMN7R0-30YL PSMN1R2-25YL PSMN1R3-30YL PSMN3R0-30YL PSMN3R5-30YL
Contextual Info: Nine new Trench 6 MOSFETs in a Power-SO8 package The world’s first < 1 mΩ Power-SO8 MOSFETs at 25 V We’ve extended our range of Trench 6 MOSFETs with nine new devices at 25 V, 30 V, 40 V and 80 V in the LFPAK SOT669 and SOT1023 package. NXP leads the way with its range of Trench 6 MOSFETs in

TRANSISTOR BC 157 pin connection

Abstract: UA776 TRANSISTOR BC 157 transistor BC 247 BF247 sgs thomson Fets TRANSISTOR BC 313 1N4148 77603 UA776C
Contextual Info: UA776 PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIERS . . . MICROPOWER OPERATION NO FREQUENCY COMPENSATION REQUIRED WIDE PROGRAMMING RANGE HIGH SLEW RATE SHORT-CIRCUIT PROTECTION PROGRAMMABLE SINGLE OP-AMPs N DIP8 Plastic Package D SO8 (Plastic Micropackage)

f 4558

Abstract: 4558 RS 4558 ci 4558 4558 schematic diagram 4558 datasheet power amp 4558 4558 C 4558 d 4558 equivalent
Contextual Info: MC4558 WIDE BANDWIDTH DUAL BIPOLAR OPERATIONAL AMPLIFIERS INTERNALLY COMPENSATED SHORT–CIRCUIT PROTECTION GAIN AND PHASE MATCH BETWEEN AMPLIFIERS LOW POWER CONSUMPTION PIN TO PIN COMPATIBLE WITH MC1458/LM358 GAIN BANDWIDTH PRODUCT at 100kHz 5.5MHz D SO8

lm336 pin diagram

Abstract: LM236-LM336 BAP 16 voltage regulator KVT 20 Temperature LM336B ST make JESD97 LM236 LM336 LM336B LM336D 5.0
Contextual Info: LM236-LM336 2.5V voltage references Features ● Low temperature coefficient ● Wide operating current of 400µA to 10mA ● 0.2Ω dynamic impedance ● Guaranteed temperature stability ● Fast turn-on TO92 Plastic package Description SO8 (Plastic micropackage)

TS635IDW

Abstract: TS636 HP3585 ST70134 ST70135 TS635 TS635ID vigi
Contextual Info: TS635 DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE • LOW NOISE : 3.2nV/√Hz, 1.5pA/√Hz ■ HIGH OUTPUT CURRENT : 160mA min. ■ VERY LOW HARMONIC AND INTERMODULATION DISTORTION D SO8 Plastic Micropackage ■ HIGH SLEW RATE : 40V/µs

HP3585

Abstract: ST70134 ST70135 TS635 TS635ID TS635IDW TS636
Contextual Info: TS635 DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE • LOW NOISE : 3.2nV/√Hz, 1.5pA/√Hz ■ HIGH OUTPUT CURRENT : 160mA min. ■ VERY LOW HARMONIC AND INTERMODULATION DISTORTION D SO8 Plastic Micropackage ■ HIGH SLEW RATE : 40V/µs

smd marking k301

Abstract: SMD sot23-5 marking E1 sti7xxx K301 marking marking k301 TSH70 TSH71 TSH72 TSH73 TSH74
Contextual Info: TSH70,71,72,73,74,75 Rail-to-Rail, Wide-Band, Low-Power Operational Amplifiers • 3V, 5V, ±5V specifications ■ 3dB bandwidth: 90MHz ■ Gain bandwidth product: 70MHz ■ Slew rate: 100V/ms Pin Connections top view TSH70 : SOT23-5/SO8 Output 1 VCC - 2

Contextual Info: TSH70,71,72,73,74,75 Rail-to-Rail, Wide-Band, Low-Power Operational Amplifiers • 3V, 5V, ±5V specifications ■ 3dB bandwidth: 90MHz ■ Gain bandwidth product: 70MHz ■ Slew rate: 100V/ms Pin Connections top view TSH70 : SOT23-5/SO8 Output 1 VCC - 2

LM336

Abstract: lm336 pin diagram LM236 LM336B lm336 to92
Contextual Info: LM236 LM336,B 2.5V VOLTAGE REFERENCES • LOW TEMPERATURE COEFFICIENT ■ WIDE OPERATING CURRENT OF 400µA TO 10mA ■ 0.2Ω DYNAMIC IMPEDANCE Z TO92 Plastic Package ■ GUARANTEED TEMPERATURE STABILITY ■ FAST TURN-ON D SO8 (Plastic Micropackage) DESCRIPTION

lm336 pin diagram

Abstract: LM336 lm317 to92 Datasheet lm317 so8 lm336 datasheet equivalent lm336 lm317 TO92 1N457 equivalent equivalent diode for 1n457 lm336 shunt regulator pin diagram
Contextual Info: LM236,A LM336,B 2.5V VOLTAGE REFERENCES . . . LOW TEMPERATURE COEFFICIENT WIDE OPERATING CURRENT OF 400µA TO 10mA 0.2Ω DYNAMIC IMPEDANCE GUARANTEED TEMPERATURE STABILITY FAST TURN-ON Z TO92 Plastic Package D SO8 (Plastic Micropackage ORDER CODES Part numTemperature Range

transistor 1800MHz

Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

transistor 1800MHz

Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Contextual Info: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Contextual Info: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 15W  Advanced Heat-Sink Technology

RFHA

Abstract: LQG11A47NJ00
Contextual Info: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Contextual Info: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 15W  Advanced Heat-Sink Technology

RFHA1006

Abstract: 0906-4K LQG11A47NJ00
Contextual Info: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

EC 401 TRANSISTOR

Abstract: Gan hemt transistor RFMD transistor 1800MHz
Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

91/157/AET

Contextual Info: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet - production data Applications • Ear-face proximity detection for smart phone devices SO8 narrow • Companion device for navigation joystick/optical track pad UFDFPN8

ufdfpn8 footprint

Abstract: dfn8 tray ufdfpn8 ufdfpn8 thermal resistance 91/157/AET
Contextual Info: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet - production data Applications • Ear-face proximity detection for smart phone devices SO8 narrow • Companion device for navigation joystick/optical track pad UFDFPN8

ba 6730b

Contextual Info: SP7656 PowerBlox High-Voltage, Step-Down Converter in SO8-EP FEATURES „ Wide Input Voltage Range 4.5V – 29V „ 3 Amps Continuous 4A Peak Output Current „ Internal Compensation „ Input Feedforward Control improves Transient and Regulation „ 600kHz Constant Frequency Operation

RFHA1003S2

Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology