SO8 WIDE Search Results

Contextual Info: STEVAL-CCA036V1 Demonstration board for single channel op-amp in SO8 package Data brief Description The STEVAL-CCA036V1 demonstration board is designed to help characterize single operational amplifiers in SO8 packages. With this board, the most common op-amp based

OF TL084 OPAMP

Abstract: audio Amp. mosfet 1000 watt 3000 Watt BTL Audio Amplifier AUDIO AMPLIFIER 140 WATT MOSFET 24v 5 amp smps TDA2320A replacement DC MOTOR DRIVE WITH LM324 NE555 IGBT DRIVER TSM1001 lm336 sot23
Contextual Info: Standard linear portfolio From innovative devices to application specific products Package Flip chip DFN8 Mini SO8 SO8 S014/16 SO20 SO24 batwing SOT23-3/5 TO92 TQFP44/48 TSSOP8 TSSOP14/16 TSSOP28 Tape width mm Qty/reel (min.order qty) Lead-free available

Contextual Info: SO 8 PSMN013-30KL N-channel 30 V 13 mΩ logic-level MOSFET in SO8 Rev. 01 — 14 April 2011 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode MOSFET in SO8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial,

Contextual Info: SO 8 PSMN9R0-30KL N-channel 30 V 9 mΩ logic-level MOSFET in SO8 Rev. 01 — 14 April 2011 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode MOSFET in SO8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial,

Contextual Info: SO 8 PSMN017-30KL N-channel 30 V 17 mΩ logic-level MOSFET in SO8 Rev. 01 — 14 April 2011 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode MOSFET in SO8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial,

Contextual Info: SO 8 PSMN5R5-30KL N-channel 30 V 5.8 mΩ logic-level MOSFET in SO8 Rev. 01 — 17 March 2011 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode MOSFET in SO8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial,

tl0721

Abstract: TL072 tl072 cl tl072 equivalent TL072A TL072B TL072CD TL072CN TL072ID TL072IN
Contextual Info: 2002-06-14 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 73-117-31 TL072IN JFET op-amp Dual 73-461-25 TL072ID JFET op-amp SO8 73-461-33 TL072CD JFET op-amp SO8 TL072

TL071

Abstract: TL071A TL071B TL071CD TL071CN TL071ID TL071IN Small Signal Amplifiers TL071 op-amp
Contextual Info: 2002-06-14 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 73-460-83 TL071CN JFET op-amp DIL8 73-460-91 TL071CD JFET op-amp SO8 73-461-09 TL071IN JFET op-amp DIL8 73-461-17 TL071ID JFET op-amp SO8

TL082

Abstract: TL082 opamp TL082CL TL082A TL082B TL082CN TL082IN TL082 PIN DIAGRAM TL082I TL-082
Contextual Info: 2002-06-14 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 73-461-82 TL082CN JFET op-amp DIL8 73-461-90 TL082CD JFET op-amp SO8 73-462-08 TL082IN JFET op-amp DIL8 73-462-16 TL082ID JFET op-amp SO8

so8 footprint

Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
Contextual Info: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon

SOT1023

Abstract: lfpak sot1023 sot669 footprint LFPAK footprint so8 footprint PSMN7R0-30YL PSMN1R2-25YL PSMN1R3-30YL PSMN3R0-30YL PSMN3R5-30YL
Contextual Info: Nine new Trench 6 MOSFETs in a Power-SO8 package The world’s first < 1 mΩ Power-SO8 MOSFETs at 25 V We’ve extended our range of Trench 6 MOSFETs with nine new devices at 25 V, 30 V, 40 V and 80 V in the LFPAK SOT669 and SOT1023 package. NXP leads the way with its range of Trench 6 MOSFETs in

UA776

Abstract: 77607 transistor BC 247 TR BC TRANSISTOR BC 157 1N4148 UA741 UA776C UA776CD UA776CN
Contextual Info: UA776 PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIERS . . . MICROPOWER OPERATION NO FREQUENCY COMPENSATION REQUIRED WIDE PROGRAMMING RANGE HIGH SLEW RATE SHORT-CIRCUIT PROTECTION PROGRAMMABLE SINGLE OP-AMPs N DIP8 Plastic Package D SO8 (Plastic Micropackage)

TRANSISTOR BC 157 pin connection

Abstract: UA776 TRANSISTOR BC 157 transistor BC 247 BF247 sgs thomson Fets TRANSISTOR BC 313 1N4148 77603 UA776C
Contextual Info: UA776 PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIERS . . . MICROPOWER OPERATION NO FREQUENCY COMPENSATION REQUIRED WIDE PROGRAMMING RANGE HIGH SLEW RATE SHORT-CIRCUIT PROTECTION PROGRAMMABLE SINGLE OP-AMPs N DIP8 Plastic Package D SO8 (Plastic Micropackage)

UA776

Abstract: UA741 UA776C UA776CN UA776I UA776M UA741 DIP8
Contextual Info: UA776 PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIERS . . . MICROPOWER OPERATION NO FREQUENCY COMPENSATION REQUIRED WIDE PROGRAMMING RANGE HIGH SLEW RATE SHORT-CIRCUIT PROTECTION PROGRAMMABLE SINGLE OP-AMP N DIP8 Plastic Package D SO8 (Plastic Micropackage)

lm336 pin diagram

Abstract: LM236-LM336 BAP 16 voltage regulator KVT 20 Temperature LM336B ST make JESD97 LM236 LM336 LM336B LM336D 5.0
Contextual Info: LM236-LM336 2.5V voltage references Features ● Low temperature coefficient ● Wide operating current of 400µA to 10mA ● 0.2Ω dynamic impedance ● Guaranteed temperature stability ● Fast turn-on TO92 Plastic package Description SO8 (Plastic micropackage)

TS635IDW

Abstract: TS636 HP3585 ST70134 ST70135 TS635 TS635ID vigi
Contextual Info: TS635 DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE • LOW NOISE : 3.2nV/√Hz, 1.5pA/√Hz ■ HIGH OUTPUT CURRENT : 160mA min. ■ VERY LOW HARMONIC AND INTERMODULATION DISTORTION D SO8 Plastic Micropackage ■ HIGH SLEW RATE : 40V/µs

HP3585

Abstract: ST70134 ST70135 TS635 TS635ID TS635IDW TS636
Contextual Info: TS635 DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE • LOW NOISE : 3.2nV/√Hz, 1.5pA/√Hz ■ HIGH OUTPUT CURRENT : 160mA min. ■ VERY LOW HARMONIC AND INTERMODULATION DISTORTION D SO8 Plastic Micropackage ■ HIGH SLEW RATE : 40V/µs

smd marking k301

Abstract: SMD sot23-5 marking E1 sti7xxx K301 marking marking k301 TSH70 TSH71 TSH72 TSH73 TSH74
Contextual Info: TSH70,71,72,73,74,75 Rail-to-Rail, Wide-Band, Low-Power Operational Amplifiers • 3V, 5V, ±5V specifications ■ 3dB bandwidth: 90MHz ■ Gain bandwidth product: 70MHz ■ Slew rate: 100V/ms Pin Connections top view TSH70 : SOT23-5/SO8 Output 1 VCC - 2

Contextual Info: TSH70,71,72,73,74,75 Rail-to-Rail, Wide-Band, Low-Power Operational Amplifiers • 3V, 5V, ±5V specifications ■ 3dB bandwidth: 90MHz ■ Gain bandwidth product: 70MHz ■ Slew rate: 100V/ms Pin Connections top view TSH70 : SOT23-5/SO8 Output 1 VCC - 2

Contextual Info: LM236-LM336 2.5V voltage references Features ● Low temperature coefficient ● Wide operating current of 400µA to 10mA ● 0.2Ω dynamic impedance ● Guaranteed temperature stability ● Fast turn-on TO92 Plastic package Description SO8 (Plastic micropackage)

LM336

Abstract: lm336 pin diagram LM236 LM336B lm336 to92
Contextual Info: LM236 LM336,B 2.5V VOLTAGE REFERENCES • LOW TEMPERATURE COEFFICIENT ■ WIDE OPERATING CURRENT OF 400µA TO 10mA ■ 0.2Ω DYNAMIC IMPEDANCE Z TO92 Plastic Package ■ GUARANTEED TEMPERATURE STABILITY ■ FAST TURN-ON D SO8 (Plastic Micropackage) DESCRIPTION

lm336 pin diagram

Abstract: LM336 lm317 to92 Datasheet lm317 so8 lm336 datasheet equivalent lm336 lm317 TO92 1N457 equivalent equivalent diode for 1n457 lm336 shunt regulator pin diagram
Contextual Info: LM236,A LM336,B 2.5V VOLTAGE REFERENCES . . . LOW TEMPERATURE COEFFICIENT WIDE OPERATING CURRENT OF 400µA TO 10mA 0.2Ω DYNAMIC IMPEDANCE GUARANTEED TEMPERATURE STABILITY FAST TURN-ON Z TO92 Plastic Package D SO8 (Plastic Micropackage ORDER CODES Part numTemperature Range

transistor 1800MHz

Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

transistor 1800MHz

Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology