SO 227 PACKAGE Search Results

transistors mj 1504

Contextual Info: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET COOLMOS • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package ID SO "UL Recognized" ISOTOP

Contextual Info: APT31N80JC3 800V 31A 0.145Ω Super Junction MOSFET COOLMOS • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package ID SO "UL Recognized" ISOTOP

APT77N60JC3

Contextual Info: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package

Contextual Info: APT10035JFLL 1000V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

75n120

Contextual Info: □ IX Y S High Voltage IGBT IXDN 75N120 1200 V 150 A 2.2 V V CES v I C25 CE sat typ Short Circuit S O A Capability Square R B SO A miniBLOC, SOT-227 B TO Preliminary Data E153432 E Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcCR Tj = 25°C to 150°C; Rge = 20 kQ

silicon diode byw 60

Abstract: byw 36 v diode BYW 60
Contextual Info: Te m ic BYW32.BYW36 TELEFUNKEN Semiconductors Fast Silicon Mesa Rectifiers Features • Glass passivated junction • H erm etically sealed package • L ow reverse current • Soft recovery characteristic Applications Fast rectifier and switch for exam ple for T V -lin e

AMIS-721250

Abstract: PI6050D 1200DPI CCD Linear Image Sensor 600DPI ccd sensor -image 1200 dpi cis sensor Contact Image Sensor
Contextual Info: AMIS-721250: Contact Image Sensor Data Sheet 1.0 General Description AMI Semiconductor’s AMIS-721250 PI6050D contact image sensor (CIS) is a selectable 600 or 1200 dot per inch (dpi) resolution linear image sensor, which employs AMI Semiconductor’s proprietary CMOS image sensing technology. The sensor contains an onchip output amplifier, power-down circuitry and parallel transfer features that are uniquely combined with the present-day active-pixelsensor technology. The image sensors are designed to be cascaded end-to-end on a printed circuit board (PCB) and packaged in an

Diode BFE

Contextual Info: Series B-2T, B-2 25-42.5 Amp • SCR/DIODE Modules B ght Standard Grcuits For AC or DC Variable Voltage O utput Up To 15KW Control over power PART NUMBER IDENTIFICATION S e rie s T y p e B-Case style C eram ic Base C u rre n t 5 - 2 5 A m ps 6 - 42.5 A m ps

TLP338

Contextual Info: TLP337,338 GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA TELECOMMUNICATION. OFFICE MACHINE. TELEPHONE USE EQUIPMENT. The TOSHIBA TLP337 and TLP338 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

TCD131D

Abstract: TC74HC04P 2SA1015-Y 2SA1015 Y
Contextual Info: C D 1 3 1 D The TCD131D is a high resolution and high sensitivity 2048-element linear image sensor. The device can be used foi OCR» POS handscanner bar-code type , and other optical measurements. The device is operated by only 12V power supply. The device is mounted in 22-pin Cerdip package

amd (BGA) replacement alloy

Abstract: Sn-58Bi NOKIA CIRCUIT PCB SIEMENS WASHING machine TOSHIBA GLASS MOLD washing machine bosch circuit diagram visteon sony antimony
Contextual Info: Lead Pb -Free Packaging Strategy 2000− −2003 . . JUNE 2000 . . . . . . . JAMES HAYWARD . NOTE ON USAGE It is a peculiarity of the English language that “lead” (as in package lead) and “lead” (as in the metallic element) are homographic; that is, they are spelled the same but have different

Contextual Info: SMZJ3788 thru SMZJ3809B Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor • Meets MSL level 1, per J-STD-020C, LF max peak

L6599AT

Abstract: L6599a L6599ATD
Contextual Info: L6599AT Improved high-voltage resonant controller Features • 50% duty cycle, variable frequency control of resonant half-bridge ■ High-accuracy oscillator ■ Up to 500 kHz operating frequency ■ Two-level OCP: frequency-shift and latched shutdown ■

L6234

Abstract: L6234PD
Contextual Info: L6234 Three phase motor driver Features • Supply voltage from 7 to 52 V ■ 5 A peak current ■ RDSon 0.3 Ω typ. value at 25 °C ■ Cross conduction protection ■ TTL compatible driver ■ Operating frequency up to 150 kHz ■ Thermal shutdown ■ Intrinsic fast free wheeling diodes

sn75180

Contextual Info: SP491 SIGNAL PROO F SS PNG F X O F l l FNCF RS485 Driver/Receiver Pair • ■ ■ ■ ■ ■ ■ ■ RS485 and RS422 +5V Only Power Supply Required Low P ow er— Ice = 300 jjA Typical Glitch-Free Power Up/Down -7 V to +12V Common Mode Range 70mV Typical Input Hysteresis

smd diode GW

Abstract: TEMD1000 TSMF1000 TSMF1020 TSMF1030
Contextual Info: TSMF1000, TSMF1020, TSMF1030 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES TSMF1000 • Package type: surface mount TSMF1020 • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7

TMS12

Abstract: Z311 TLS14 TMS9 TMS7
Contextual Info: Veci VCC2 GND1 GND2 TLS T O U TP U T TM S PIN DESCRIPTION DATA X15.O Y15-O TMS i m t l s 1m X Operand Input Y Operand Input MSP of 32-Bit T Output LSP of 32-Bit T Output CONTROL XEN YEN WEN XM YM FA LD RNO TME TLE TSEL Enable X-lnput Latch Enable Y-lnput Latch

Contextual Info: f ù PER ICOM PI6C918/919 3.3V Precision Clock Generator Features Description No external capacitors 919 only Excellent signal quality

50-150B

Contextual Info: S G S - Ï H O M S O N m œ m ie r a M o s s B Z W 5 0 - 10 , B/18 0 , B TRANSIL FEATURES • PEAK PULSE POWER : 5000 W 10/1 OOO^s ■ STAND-OFF VOLTAGE RANGE: From 10V to 180 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSE TIME

ICL 7211

Contextual Info: October 2005 DS90C383B +3.3V Programmable LVDS Transmitter 24-Bit Flat Panel Display FPD Link-65 MHz General Description Features The DS90C383B transmitter converts 28 bits of CMOS/TTL data into four LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in

Contextual Info: SN74LVC3G34 TRIPLE BUFFER GATE www.ti.com SCES366J – AUGUST 2001 – REVISED FEBRUARY 2007 FEATURES • • • • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V Max tpd of 4.1 ns at 3.3 V

SOT-23 AAAA

Abstract: tps3809k33dbvr marking AAAA sot23
Contextual Info: TPS3809J25, TPS3809L30 TPS3809K33, TPS3809I50 www.ti.com SLVS228B – AUGUST 1999 – REVISED JULY 2012 3-PIN SUPPLY VOLTAGE SUPERVISORS Check for Samples: TPS3809J25, TPS3809L30, TPS3809K33, TPS3809I50 FEATURES APPLICATIONS • • • • 1 2 • • 3-Pin SOT-23 Package

Contextual Info: Te m ic TLMV3100 TELEFUNKEN Semiconductors Bi-Color SMD LED Color Type Technology High efficiency red TLMH3100 GaAsP on GaP Green TLMG3100 GaP on GaP Angle of Half Intensity Up. 60 “ Description These devices have been designed to meet the increasing demand for surface mounting technology.

tantalum capacitor dip df

Contextual Info: TC Tantalum Capacitors with Solid Electrolyte Series Surface Mount Molded Chip MERITEK TC series is designed for hybrid circuit and low profile printed circuit board applications where inductance is to be minimized or where substrate space is at a premium. They can be attached