SNAP-OFF DIODE Search Results

Contextual Info: N AMER PHILIPS/DISCRETE b^E ]> bbSB^Bl 00H705D &&& BIAPX Philips Semiconductors Preliminary specification Fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse

Contextual Info: PFF50 Axial Leaded Hermetically Sealed High Voltage Superfast Rectifier Diode POWER POWERMANAGEMENT DISCRETES Outline Drawing Features Very Low Reverse Recovery Time Avalanche Capability Glass Passivated for Hermetic Sealing Low Switching Losses Soft, Non-snap off, Recovery Characteristics

m2303

Abstract: BY229F IEC134 M2296 200 BY229F M2300 by229
Contextual Info: BY229F SERIES _ FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. Their electrical isolation makes them ideal for

byv26c ph

Abstract: philips diode PH 15
Contextual Info: N AUER PHILIPS/DISCRETE 1,^53131 QDS7Q2b SbT • APX b^E » Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse

BYM26C PH

Contextual Info: b'lE D N AMER PHI LIPS/ DISCRE TE bb53^31 0D57Q1S 7fi3 BIAPX Philips Semiconductors Product specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse

d8378

Abstract: D8380
Contextual Info: BY229 SERIES _ FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. They are intended fo r use in chopper applications as well as in

Contextual Info: N AUER PHILIPS/DISCRETE b'lE D OdEbSOM SIS « A P X _ Product specification Philips S em iconductors_ EHT avalanche very fast soft-recovery diodes FEATURES • • • Soft-recovery non snap-off characteristics Capable of absorbing avalanche

Contextual Info: N AUER PHILIPS/DISCRETE bRE D ^ 5 3 ^ 3 1 D027D37 3MH « A P X Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse

BYW97G PH

Contextual Info: N AUER PHIL IPS /DI SCRE TE b b 5 3 c!31 0Q270bD 727 * A P X b^E D Philips Semiconductors Preliminary specification Fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics BYW97F; BYW97G QUICK REFERENCE DATA

Contextual Info: N AMER PHILIPS/DISCRETE TOD D bbS3T31 0010540 5 1N3909 to 1N3913 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO—5 metal envelopes, featuring non-snap-off characteristics. They are intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.

Contextual Info: N AMER PHILIPS/DISCRETE bSE » bbS3^31 QD2b4fi2 024 BY505 IAPX HIGH-VOLTAGE SOFT-RECOVERY RECTIFIER DIODE Glass-passivated rectifier diode in hermetically sealed axial-leaded glass envelope. It is intended as general purpose rectifier for high frequencies and features non-snap-off soft recovery switching

Contextual Info: APX b?E D • bb53T31 0025705 32b N AMER PHILIPS/DISCRETE BYD77 SERIES yv EPITAXIAL AVALANCHE DIODES Rectifier diodes in hermetically sealed leadless SMID*-envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching characteristics and are capable

BYD73

Abstract: BYD73A BYD73E
Contextual Info: BYD73 SERIES J \ _ EPITAXIAL AVALANCHE DIODES R e ctifie r diodes in he rm etica lly sealed axial-leaded 'Im p lo s io n ' envelopes. They feature low forw ard voltage drop, very fast recovery, very low stored charge, non-snap-off sw itching characteristics and are

Contextual Info: bbS3^31 DD3bbSa b77 * A P X BYV28 SERIES LRE D N AUER PHILIPS/DISCRETE X EPITAXIAL AVALANCHE DIODES Glass passivated epitaxial rectifier diodes in hermetically sealed axial-leaded glass envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching

BY709

Contextual Info: bTE D BY707 BY708 BY709 bbSBIBl QQBbSEl bT4 N AMER PHILIPS/DISCRETE SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODES* E.H.T. rectifier diodes in glass envelopes intended fo r use in high-voltage applications such as the highvoltage supply of television receivers and monitors. The devices feature non-snap-off characteristics.

Contextual Info: UP lI January 7, 1998 200V, 4A, 30ns QUICK REFERENCE DATA Very low reverse recovery tim e Low forward voltage drop Glass passivated for herm etic sealing Low switching losses Soft, non-snap off, recovery characteristics ABSOLUTE MAXIMUM RATINGS @ 25°C •

byd74

Abstract: BYD74E BYD74A BDY74A
Contextual Info: SbE » 711002b 0CI40bl7 101 • PHIN BYD74 SERIES PHILIPS INTERNATIONAL SbE ]> v n m n m i v EPITAXIAL AVALANCHE DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching characteristics

Contextual Info: N AUER PHILIPS/DISCRETE b^E 1> • bbSB'iai 002bbSl 212 B A P X _ J ^ BYV27 SERIES EPITAXIAL AVALANCHE DIODES Glass passivated epitaxial rectifier diodes in hermetically sealed axial-leaded glass envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching

by713

Contextual Info: b^E » • bbsa^ai DOEbss? oia « apx A BY712 BY713 BY714 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODES* E.H.T. rectifier diodes in glass envelopes intended fo r use in high-voltage applications such as the highvoltage supply o f television receivers and monitors. The devices feature non-snap-off characteristics.

Contextual Info: N AUER PHILIPS/DISCRETE b'lE ]> • APX bbS3ci31 DD2bS3Q bD7 bYHD JL BY716 SILICON VERY FAST EHT SOFT-RECOVERY RECTIFIER DIODES EHT rectifier diodes in glass envelopes intended for use in general purpose high-speed high-voltage applications. The devices feature non-snap-off characteristics. Because of the small envelope, the diodes

Contextual Info: N AMER PHILIPS/DISCRETE QbE D ^53*131 ODllbhS 8 PHR605CT SERIES r - O .3 - 17 VERY FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes which feature low forward voltage drop, very fast reverse recovery times and 'non-snap-off'. They are intended for use in

Contextual Info: N ANER PHILIPS/DISCRETE PMSmQj SERIES bbSBTBl DD11L7T fl ObE D _y v_ l ~ 0 3 - 13 EPITAXIAL AVALANCHE DIODES The PHS1001 series devices are glass-passivated epitaxial silicon rectifier diodes in hermetically sealed glass envelopes. These devices feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off

Contextual Info: N AUER PHILIPS/DISCRETE b'JE D bb53R31 OQSbSlfi DOT APX B Y /U t BY706 SILICON EHT SOFT-RECOVERY RECTIFIER DIODES EHT rectifier diodes in glass envelopes intended for use in general purpose high-voltage applications. The devices feature non-snap-off characteristics. Because o f the small envelope, the diodes should be

Contextual Info: N AMER PHILIPS/DISCRETE b b S B ^ l DDEbHTfi b^E » A IAPX BY609 BY610 SILICON E.H.T, AVALANCHE RECTIFIER DIODES * E .H .T . rectifier diodes in glass envelopes. For use in high-voltage applications such as multipliers, especially in diode-split transformers. The devices feature non-snap-off characteristics and are capable