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    SN06 Search Results

    SN06 Datasheets (14)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SN063M1R00A2F-0511
    Yageo Capacitor: 1UF: 63: 20%: 5 x 11: RDL: 5: 2: 1000: T/R Original PDF 40.19KB 2
    S-N066-1007
    Japan Aviation Electronics Industry, SWITCH ACCESS TACTILE PUTTON Original PDF 508.71KB 6
    S-N066-1008
    Japan Aviation Electronics Industry, SWITCH ACCESS TACTILE PUTTON Original PDF 508.71KB 6
    S-N066-1020
    Japan Aviation Electronics Industry, SWITCH ACCESS TACTILE PUTTON Original PDF 508.71KB 6
    S-N066-1031
    Japan Aviation Electronics Industry, SWITCH ACCESS TACTILE PUTTON ROUND Original PDF 508.71KB 6
    S-N066-1038
    Japan Aviation Electronics Industry, SWITCH ACCESS TACTILE PUTTON Original PDF 508.71KB 6
    S-N066-1039
    Japan Aviation Electronics Industry, SWITCH ACCESS TACTILE PUTTON SQUARE Original PDF 508.71KB 6
    badge CJQ14SN06
    JCET Group N-Channel Power MOSFET CJQ14SN06 in SOP8 package, 60V drain-source voltage, 14A continuous drain current, 9.7mΩ RDS(on) at VGS=10V, trench technology for high efficiency in SMPS and load switch applications. Original PDF
    badge CJAB25SN06
    JCET Group N-Channel Power MOSFET CJAB25SN06 with 65V drain-source voltage, 25A continuous drain current, 1.5W power dissipation, and low RDS(on) of 13.5mΩ at VGS=10V, housed in a PDFNWB3.3x3.3-8L package for high-density switching applications. Original PDF
    badge CJAE28SN06
    JCET Group CJAE28SN06 N-Channel Power MOSFET with 60V drain-source voltage, 28A continuous drain current, 11.5mΩ typical RDS(on) at 10V VGS, SGT technology for low gate charge, and DFNWB3x3-8L package for efficient heat dissipation. Original PDF
    badge CJQ18SN06
    JCET Group N-Channel Power MOSFET in SOP8 package with 60V drain-source voltage, 18A continuous drain current, and low RDS(on) of 6.5mΩ at 10V VGS, suitable for high side switch and load switch applications. Original PDF
    badge CJAE35SN06
    JCET Group CJAE35SN06 N-Channel Power MOSFET with 60V drain-source voltage, 35A continuous drain current, 7.5mΩ typical RDS(on) at 10V VGS, SGT technology for low gate charge, and DFNWB3×3-8L package for efficient heat dissipation. Original PDF
    badge CJAB20SN06
    JCET Group N-Channel Power MOSFET CJAB20SN06 with 60V drain-source voltage, 20A continuous drain current, 8mΩ typical RDS(on) at 10V VGS, and 3.1W power dissipation in a 3x3-8L DFN package. Original PDF
    badge CJAC130SN06L
    JCET Group N-Channel Power MOSFET CJAC130SN06L with 60V drain-source voltage, 130A continuous drain current, 2.6mΩ typical RDS(on) at 10V VGS, shielded gate trench technology, in PDFNWB5x6-8L package. Original PDF
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    SN06 Price and Stock

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    NIC Components Corp NRSN06I4J103TRF

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    Avnet Americas NRSN06I4J103TRF Tape & Reel 5,000 20 Weeks 5,000
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    Bristol Electronics NRSN06I4J103TRF 3,950 1
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    Avnet Abacus NRSN06I4J103TRF Tape & Reel 17 Weeks 5,000
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    NIC Components Corp NRSN06I4J101TRF

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    Avnet Americas NRSN06I4J101TRF Tape & Reel 5,000 20 Weeks 5,000
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    Avnet Abacus NRSN06I4J101TRF Tape & Reel 17 Weeks 5,000
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    ODU-USA Inc K23K0C-P07LSN0-650S

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    Avnet Americas K23K0C-P07LSN0-650S Bulk 10 Weeks 1
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    ODU-USA Inc S22LAC-P03MSN0-620S

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    Avnet Americas S22LAC-P03MSN0-620S Bulk 10 Weeks 1
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    NIC Components Corp NRSN06I4F10R7TRF

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    Avnet Americas NRSN06I4F10R7TRF Tape & Reel 5,000
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