SMT A1 TRANSISTOR Search Results

UMT3N

Abstract: T108 T109 T110
Contextual Info: UMT3N/IMT3A h ÿ > v 7s £ /Transistors UMT3N IMT3A 7 4 V U -— T “ y K -X — K x / W X Isolated Mini-Mold Device -JK 'J'ft^Jlfifll/G eneral Small Signal Amp. • W fiv fîi ¡2/Dimensions Unit : mm 1) UMT (SC-70), SMT (SC-59) t i L'«o 2) UMT, SMT CDÉ

Contextual Info: IMB4 /Transistors t' I M 4 B 'Sis— T V O / ’v— ^ K ^ ^ /V ln v e rte r Driver Isolated Mini-Mold Device • • ^ J g -^ J H /D im e n s io n s Unit : mm 2( OT h Vt>J VtVvJlcr 1) SMT (SC-59) fclD — , ,+0.2 7 > '/ X j i if A o T i'J o '• - 0 . '

smt a1 transistor

Abstract: A1234 G200 PTF 10021
Contextual Info: PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is

Contextual Info: GOLDMOS PTF 10021 Field Effect Transistor 30 Watts, 1.4–1.6 GHz Description The PTF 10021 is an internally matched, 30–watt GOLDMOS FET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. This device operates at 48% efficiency

smt a1 transistor

Abstract: G200
Contextual Info: GOLDMOS PTF 10021 Field Effect Transistor 30 Watts, 1.4–1.6 GHz Description The PTF 10021 is an internally matched, 30–watt GOLDMOS FET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. This device operates at 48% efficiency

Contextual Info: IMX1 /Transistors I M X 1 7 < 7 1 / - T 7 K ^ - ;E - ^ K t / H 7 —fix/H f ^ * a lflIffl/G eneral Small Signal Amp. Isolated Mini-Mold Device • • ^. g-^->i@ /Dim ensions U n it: mm) 1) SMT (SC-59) t m — f t t H c 2 f@(7) h 7 > - > ' X 5 i ! A o Zi'&o

J201 Replacement

Abstract: JFET 401 Dual PNP Transistor depletion 60V power mosfet 3N165 "pin compatible"
Contextual Info: IT130A IT130 IT131 IT132 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT130 Series Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector Current

sot 26 Dual N-Channel MOSFET

Abstract: 10mA JFET LS358
Contextual Info: LS358 LOG CONFORMANCE MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES ∆re ≤1Ω from ideal TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC C2 E1 5 B1 BOTH SIDES 500mW 4.3mW/°C

jfet differential transistor

Abstract: JFET 401 U402 N CHANNEL FET
Contextual Info: LS318 LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES ∆re =1Ω TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC Maximum Temperatures Storage Temperature Range Operating Junction Temperature

J201 Replacement

Abstract: 2N5019 "direct replacement"
Contextual Info: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation

Current Regulator Diode

Abstract: J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor
Contextual Info: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted

Contextual Info: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted

Contextual Info: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1

Contextual Info: IT120A IT120 IT121 IT122 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 E1 C2 TA= 25°C unless otherwise noted IC Collector Current

J201 spice

Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
Contextual Info: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated

capacitor siemens 4700 35

Abstract: L15 800 G200 K1206 PTF10049 SMT 181 resistor SIEMENS B 58 371 470-860 mhz Power amplifier w PTF 10049
Contextual Info: PTF 10049 85 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10049 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications in the 470 to 860 MHz band. It is rated at 85 watts

UMB5

Abstract: UMB5N DTA124E T110 T148
Contextual Info: UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A Transistors General purpose dual digital transistors UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A !External dimensions (Units : mm) !Features 1) Two DTA124E chips in a UMT or SMT package. 1.3 2.0 (2) 0.9 0.7

bt 1696

Abstract: 12x12 bga thermal resistance 35x35 bga BGA 23X23 BGA 27X27 pitch TsoP 20 Package XILINX xilinx CS144 thermal resistance CF1144 BGA thermal resistance 6x8 smt a1 transistor
Contextual Info: Xilinx Advanced Packaging Electronic packages are the interconnect housings for semiconductor devices. They provide electrical interconnections between the IC and the board, and they efficiently remove the heat generated by the device. Device feature sizes are

Contextual Info: UMA1N / UMB1N / FMA1A / IMB1A / IMB5A Transistors General purpose dual digital transistors UMA1N / UMB1N / FMA1A / IMB1A / IMB5A !External dimensions (Units : mm) !Feature 1) Two DTA124E chips in a UMT or SMT package. −55 ~ +150 1.3 2.0 (2) 0.9 0.7 UMB1N

IC t148

Abstract: DTA124E T110 T148
Contextual Info: UMA1N / UMB1N / FMA1A / IMB1A / IMB5A Transistors General purpose dual digital transistors UMA1N / UMB1N / FMA1A / IMB1A / IMB5A !External dimensions (Units : mm) !Feature 1) Two DTA124E chips in a UMT or SMT package. −55 ~ +150 1.3 2.0 (2) 0.9 0.7 UMB1N

UM81N

Abstract: sc-88a si DTA124E SML-210 SML-210FT SML-210MT T110 T148
Contextual Info: UMA1N / UMB1N / UMB5N / FMA1A / IMB1A / IMB5A Transistors General purpose dual digital transistors UMA1NI UMB1NI UMB5NI FMA1A/ IMB1AI IMB5A •External dimensions (U nits: mm) •Features 1) Two DTA124E chips in a UMT or SMT package. •Absolute maximum ratings (Ta = 25°C)

smt a1 transistor

Abstract: smt a1 transistor NPN J507 Replacement n channel 2n4393 2n4416 transistor spice jfet photo diode u406 type u405 siliconix
Contextual Info: DPAD SERIES MONOLITHIC DUAL PICO AMPERE DIODES Linear Integrated Systems FEATURES Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA EXCELLENT CAPACITANCE MATCHING ∆CR ≤ 0.2pF ABSOLUTE MAXIMUM RATINGS1 DPAD DPAD1 TO-72 BOTTOM VIEW TO-78

ericsson 10159

Abstract: PTF10159 470-860 mhz Power amplifier w
Contextual Info: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power

ericsson 10159

Abstract: PTF 10159 10159 atc 174 capacitor siemens 4700 35 G200 K1206 UT-85-25 470-860 mhz Power amplifier w UT85-25
Contextual Info: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, LDMOS FET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 130 watts power output. Nitride surface passivation and