2SJ587
Abstract: DSA003749 Hitachi 2SJ
Contextual Info: 2SJ587 Silicon P Channel MOS FET High Speed Switching ADE-208-801 Z 1st.Edition. June 1999 Features • Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA) • 2.5 V gate drive device. • Small package (SMPAK)
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2sj587ade-208-801dsa003749hitachi 2sj |
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2SC5139
Abstract: DSA003728
Contextual Info: 2SC5139 Silicon NPN Epitaxial ADE-208-226 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter
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2sc5139ade-208-226dsa003728 |
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Hitachi DSA0076
Abstract: 2SC5138
Contextual Info: 2SC5138 Silicon NPN Epitaxial ADE-208-225A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 6 GHz typ • High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz Outline SMPAK
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2sc5138ade-208-225ahitachi dsa0076 |
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ZO 109
Abstract: zo 103 ma 2SC5247 transistor ECG 332 Hitachi DSA00398
Contextual Info: 2SC5247 Silicon NPN Epitaxial ADE-208-281 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter
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2sc5247ade-208-281zo 109zo 103 ma+2transistor ecg 332hitachi dsa00398
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2SC5138
Abstract: Hitachi DSA0014
Contextual Info: 2SC5138 Silicon NPN Epitaxial Transistor Application VHF & UHF wide band amplifier SMPAK Features • High gain bandwidth product fT = 6 GHz typ. • High gain, low noise figure PG = 13 dB typ., NF = 1.8 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector
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Contextual Info: H ITACH I 2SC5141-Silicon NPN Epitaxial Transistor Application VHF & UHF wide band amplifier SMPAK Features • High gain bandwidth product fT = 5.8 GHz typ. • High gain, low noise figure P G = 13 dB typ., NF = 1.6 dB typ. at f = 900 MHz 1. Emitter
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2sc5141------silicon2sc5141 |
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2SA2083
Abstract: 2SA20 Hitachi DSA00517
Contextual Info: 2SA2083 Silicon PNP Epitaxial ADE-208-1478 Z Rev.0 Feb. 2002 Features • Low frequency amplifier Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA2083 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –55
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2sa2083ade-208-1478d-85622d-85619+22sa20hitachi dsa00517
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Hitachi DSA0076
Abstract: 2SC5136
Contextual Info: 2SC5136 Silicon NPN Epitaxial ADE-208-223A Z 2nd. Edition Mar. 2001 Application VHF/UHF wide band amplifier Features • High gain bandwidth product fT = 3.8 GHz typ • High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Outline SMPAK
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2sc5136ade-208-223ahitachi dsa0076 |
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Hitachi DSA0076
Abstract: 2SC5140
Contextual Info: 2SC5140 Silicon NPN Epitaxial ADE-208-227A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 15 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK
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2sc5140ade-208-227ahitachi dsa0076 |
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2SC5141
Abstract: 2SC5218 Hitachi DSA0014
Contextual Info: 2SC5141 Silicon NPN Epitaxial Transistor Application VHF & UHF wide band amplifier SMPAK Features • High gain bandwidth product fT = 5.8 GHz typ. • High gain, low noise figure PG = 13 dB typ., NF = 1.6 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector
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2sc51412sc5218hitachi dsa0014 |
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ZO 109
Abstract: zo 107 2SC5247 Hitachi DSA0014
Contextual Info: 2SC5247 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ. • High gain, low noise figure PG = 17 dB typ., NF = 1.2 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector
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2sc5247zo 109zo 107hitachi dsa0014 |
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2SC5139
Abstract: Hitachi DSA0014
Contextual Info: 2SC5139 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz typ. • High gain, low noise figure PG = 15 dB typ., NF = 1.1 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector
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Contextual Info: H ITACHI 2SC5136-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fp = 3.8 GHz typ. • High gain, low noise figure PG = 11 dB typ., N F = 2.5 dB typ. at f = 9 00 MHz 1. Emitter
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2sc5136------silicon2sc5136 |
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zo 103 ma
Contextual Info: HITACHI 2SC5246-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j = 12 GHz typ. • High gain, low noise figure P G = 16.5 dB typ., NF = 1.6 dB typ. at f = 900 MHz * 1. Emitter
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2sc5246------siliconap-1712sc5246zo 103 ma |
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2SC5137
Abstract: Hitachi DSA00395
Contextual Info: 2SC5137 Silicon NPN Epitaxial ADE-208-224 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter
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2sc5137ade-208-224hitachi dsa00395 |
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H5N0301SM
Abstract: DSA003645
Contextual Info: H5N0301SM Silicon N Channel Power MOS FET Power Switching ADE-208-954 Z 1st. Edition Dec. 2000 Features • • • • Low on-resistance Low drive current High density mounting 2.5 V gate drive device Outline SMPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S
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h5n0301smade-208-954dsa003645 |
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2SC5136
Abstract: Hitachi DSA00234
Contextual Info: 2SC5136 Silicon NPN Epitaxial ADE-208-223 1st. Edition Application VHF/UHF wide band amplifier Features • High gain bandwidth product fT = 3.8 GHz typ • High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter
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2sc5136ade-208-223hitachi dsa00234 |
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Hitachi DSA002753
Contextual Info: 2SK3349 Silicon N Channel MOS FET High Speed Switching ADE-208-804 Z 1st.Edition. June 1999 Features • • • Low on-resistance RDS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA) RDS = 4.8 Ω typ. (at VGS = 2.5 V , ID = 10 mA) 2.5 V gate drive device Small package (SMPAK)
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2sk3349ade-208-804hitachi dsa002753 |
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Hitachi 2SJ
Abstract: Hitachi DSA002752
Contextual Info: 2SJ587 Silicon P Channel MOS FET High Speed Switching ADE-208-801 Z 1st.Edition. June 1999 Features • • • Low on-resistance RDS = 8.5 Ω typ. (VGS = -4 V , ID = -25 mA) RDS = 15 typ. (VGS = -2.5 V , ID = -10 mA) 2.5 V gate drive device. Small package (SMPAK)
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2sj587ade-208-801hitachi 2sjhitachi dsa002752 |
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Contextual Info: 2SC5139 Silicon N PN Epitaxial HITACHI Application V H F / U H F w ide band am plifier Features • H igh gain bandw idth product fT = 11 G H z typ • H igh gain, low noise figure PG = 15 dB typ, N F = 1.1 dB typ at f = 9 0 0 M H z Outline SMPAK 1. Emitter
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2sc5139ade-208-226 |
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code Transistor ya
Abstract: MARKING CODE YA TRANSISTOR
Contextual Info: HITACHI 2SC5137-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j - 10 GHz typ. • High gain, low noise figure PG = 16.5 dB typ., NF = 1.5 dB typ. at f = 900 MHz 1. Emitter 2. Base
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2sc5137------silicon2sc5137code transistor yamarking code ya transistor |
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208224 HZ
Contextual Info: 2SC5137 Silicon NPN Epitaxial HITACHI Application V H F / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz Outline SMPAK 1. Emitter 2. B ase 3. Collector
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2sc5137ade-208-224208224 hz |
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Contextual Info: HITACHI 2SC5139-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f-p = 11 GHz typ. • High gain, low noise figure PG = 15 dB typ., NF = 1.1 dB typ. at f = 900 MHz 1. Emitter 2. Base
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2sc5139------silicon2sc5139 |
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2SC5136
Abstract: Hitachi DSA0014
Contextual Info: 2SC5136 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 3.8 GHz typ. • High gain, low noise figure PG = 11 dB typ., NF = 2.5 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector
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