SMM Search Results

44460D

Abstract: BK36C-80
Contextual Info: TM124MBK36C, TM124MBK36S1048576 BY 36-BIT TM248NBK36C, TM248NBK36S 2097152 BY 36-BIT DYNAMIC RAM MODULE SMMS138B - MARCH 1992 - REVISED JUNE 199S Enhanced Page Mode Operation With CAS-Before-RAS CBR , RAS-Only, and Hidden Refresh Presence Detect Performance Ranges:

TM124EAD9C

Abstract: TM124EAD9B-6
Contextual Info: TM124EAD9B, TM124EAD9C 1 048 576-WORD BY 9-BIT DYNAMIC RANDOM-ACCESS MEMORY MODULES SMMS191 — JANUARY 1991 This Data Sheet is Applicable to A ll TM124EAD9BS and TM124EAD9CS Symbolized with Revision "B" and Subsequent Revisions as Described on Page 6-44.

sot 23 marking code 1ja

Contextual Info: MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G Switching Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 CASE 318 STYLE 6

Contextual Info: TM4EN64KPU, TM4EN64NPU 4194304 BY 64-BIT TM8EN64KPU, TM8EN64NPU 8388608 BY 64-BIT EXTENDED-DATA-OUT DYNAMIC RAM MODULES SMMS692 - AUGUST 1997 Organization - TM4EN64xPU-xx . , . 4194304 x 64 Bits - TM8EN64xPU-xx . . . 8388608 x 64 Bits

MMBD914LT1G

Abstract: SMMBD914LT1G
Contextual Info: MMBD914LT1G, SMMBD914LT1G, MMBD914LT3G, SMMBD914LT3G High-Speed Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  SOT−23 CASE 318 STYLE 8 Site and Control Change Requirements

marking code m1b

Abstract: SMMBT2222ALT1G SMMBT2222A MMBT2222LT1-D MMBT2222AL on semiconductor marking code 1P MMBT2222ALT1G
Contextual Info: MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

SMMBTA13LT1G

Abstract: SMMBTA14LT1G
Contextual Info: MMBTA13LT1G, SMMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G Darlington Amplifier Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 TO−236 CASE 318

SMMBD2837LT1G

Abstract: MA6 diode MARKING CODE MA6
Contextual Info: MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236AB

Contextual Info: MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. http://onsemi.com

61188-5-x

Abstract: microMELF dimensions OMM0102
Contextual Info: SMM0102 Vishay Draloric Thin Film Micro-MELF Resistors FEATURES • Advanced thin film technology  Low TCR and tight tolerances  Excellent stability  Pure tin termination on nickel barrier, plated on press fit steel caps  Compliant to RoHS Directive 2002/95/EC

SMMUN2233LT1G

Abstract: SMMUN2211LT SMMUN2216LT1 NSVMMUN2232LT1G MMUN2215LT1G MMUN2230LT1G MMUN2233LT1G MARKING A8C SOT-23
Contextual Info: MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network http://onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

m6g transistors marking code

Abstract: m6g marking code m6g marking sot23 SMMBF4391LT1G marking 6j M6G sot 23 marking code m6g m6g sot23 marking m6g MMBF4393
Contextual Info: MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors http://onsemi.com N−Channel 3 Features 1 • S Prefix for Automotive and Other Applications Requiring Unique • 2 Site and Control Change Requirements; AEC−Q101 Qualified and

MMSD4148T1G

Abstract: SMMSD4148T1G MMSD4148T3G ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
Contextual Info: MMSD4148T1G, SMMSD4148T1G, MMSD4148T3G, SMMSD4148T3G Switching Diode http://onsemi.com Features •      SOD−123 Surface Mount Package High Breakdown Voltage Fast Speed Switching Time AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

sot-23 Marking M1F

Abstract: SMMBT5551 SMMBT5551LT1G SMMBT5551LT3G SMMBT551 MMBT5551LT MMBT5551LT1G mmbt5551l
Contextual Info: MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements

silicon systems

Abstract: "tape storage"
Contextual Info: SSI 34P3216 SmmMkms Read Preamp/Channel for Tape Storage A TDK Group/Company Target Specification January 1995 DESCRIPTION FEATURES The SSI 34P3216 is a high performance BiCMOS single chip read channel IC that contains all the fu n c tio n s needed fo r sig n a l a m p lific a tio n and

SMM-008

Contextual Info: Recommended Circuit for: SMM-010 SMM-110 - 0 + 1 2V .01 IMF 4 : Î 100 PF RF IN O- -o rfo u t Block V c <y 100 PF Recommended Circuit for: SMM-008 SMM-008S SMM-108 SMM-108S -I RF IN O- 0 + 1 2V lO O P f -O RF OUT Vc o Note: Ground -008S and -108S case 70 Recommended Circuit for:

Contextual Info: SMM-208 1.5-2.5 GHz, 0.8 Watt GaAs MIMIC Amplifier March, 1995 Features - 25dB Gain and 29dBm Output Power - High Power Added Efficiency - Characterized at 3 Volts - Low Cost Surface Mount Package AI 1 I I I I I i 1 > i 1 , li 1 1 I ! I ! T 1 A 1 I C 1 1 ! ’

Contextual Info: SMM-808 2.0-7.0GHZ G aAs M M IC Amplifier Preliminary Data Features • 12dB Gain and 17dBm P1dB - Excellent VSWR: 1.5:1 Typical - 5dB Noise Figure - Operates From Single 1SV Supply - Surface-Mountable Package i 'il i I— H i I I l! * Description Stanford Microdevices' SM M -8 08 is a gallium

p1d AM

Abstract: RW mmic
Contextual Info: SMM-180 1.4-2.0 GHz, 1.5 Watt G aA s M M IC Amplifier Aprfl, 1995 Features - 25dB Gain with +/- 0.5dB Flatness - +32dBm Output Power at P1dB - 20% Power Added Efficiency - +41 dBm Output TOIP - CopperfTungsten Package Description Stanford Microdevices' SM M -180 is a high performance

Contextual Info: fX S ific o n ix SMM11P20 in c o r p o r a te d P-Channel Enhancement Mode Transistor T0-204AA TO-3 BOTTOM VIEW PRODUCT SUMMARY V (BR)DSS r DS(ON) •d (V) (A) (A) -200 0.50 -1 1 1 DRAIN (CASE) 2 GATE 3 SOURCE ABSO LU TE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

1SV170

Contextual Info: SMM-008, -010 100-4000 MHz Low Noise Amplifier Preliminary Data Features - 2.2dB Noise Figure - Excellent VSW R: 1.7:1 Typical - 18dB Gain and 15dBm P1dB - Operates From Single 12V Supply - Low-Cost Surface-Mount Package SMM-010 Pm 0«'iion«tKHi Ground Ground

Contextual Info: LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Standard snap-ins, 85C SMM Downsized Longer life @Endurance with ripple current : 2,000 hours at 85C @Non solvent resistant type @RoHS Compliant SMH ?SPACIFICATIONS Items Characteristics Category Temperature Range

Contextual Info: amtec ii B M * 1*4 I i a i i : »gS B JB : / t. «I r . ni m tfpjpp I l' •' I iH É lta li a u m j u i a Materials: M a te s w ith: CLT. SQT. SQW. ESQT. TLE. SMM, MMS. TCSD In su lator Material: B lack L quid Crystal Polym er Term inal M aterial: Phosphor Bronze

Contextual Info: F -1 9 9 -1 am tec L T M M -1 0 5 - 0 1 - T - D - S M L T M M —1 0 8 - 0 1 - G - D - R A L T M M -1 1 5 - 0 1 —T - D 2mm SHRO SPECIFICATIONS Materials: su Mates with: SQT. SOW. ESQT. TLE, SMM. MMS. TCSD In s u la to r M a te ria l: B la c k L iq u id C ry s ta l P o ly m e r