SMG2 Search Results

SMG2345PE

Abstract: MosFET
Contextual Info: SMG2345PE -3.2A , -40V , RDS ON 164 mΩ Ω P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to

SMG2371P

Abstract: MosFET
Contextual Info: SMG2371P -1A, -100V, RDS ON 1.2  P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SC-59 Low RDS(on) trench technology. Low thermal impedance. Fast switching speed.

Contextual Info: SMG2334NE 3.5 A, 30 V, RDS ON 60 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process

SMG2343

Abstract: MosFET
Contextual Info: SMG2343 -4.1A , -30V , RDS ON 45 mΩ Ω P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 The SMG2343 uses advanced trench technology to provide excellent on-resistance with low gate change.

n-channel enhancement mosfet

Contextual Info: SMG2418 4.0 A, 40 V, RDS ON = 56m Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 A DESCRIPTION L 3 3 The SMG2418 uses advanced trench technology to provide excellent on-resistance and operation with gate voltages as low

SMG2302

Abstract: MOSFET 2302
Contextual Info: SMG2302 3.2A, 20V,RDS ON 85mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SC-59 A Description L The SMG2302 provide the designer with the best S 2 3 Top View B 1

SMG2303

Abstract: 2303 mosfet
Contextual Info: SMG2303 -1.9A, -30V,RDS ON 240mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SC-59 A Description L The SMG2303 provide the designer with the best S 2 combination of fast switching, low on-resistance 3 Top View

Contextual Info: SMG2319P -2.1 A, -30 V, RDS ON 0.20  P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize high cell density process.

SMG2342NE

Abstract: MosFET
Contextual Info: SMG2342NE 5.2 A, 40 V, RDS ON 86 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and

ON60

Abstract: smg2334
Contextual Info: SMG2334NE 3.5 A, 30 V, RDS ON 60 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process

2328 diode

Contextual Info: SMG2328 100V, 250mΩ, 1.5A N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

SMG2398N

Abstract: MosFET
Contextual Info: SMG2398N 2.2 A, 60 V, RDS ON 194 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density

SMG2D60D

Abstract: FORWARD REVERSE STARTER
Contextual Info: THYRISTOR Surface Mount Device/Non-isolated SMG2D60D ( Sensitive Gate) Thyristor SMG2D60D is designed for full wave AC control applications. It can be used as an ON/OFF function or for phase control operation. TO-252 IT(AV)=2A ● High Surge Current ● Low Voltage Drop

Contextual Info: G2 / SMG2 5 TO 2000 MHz TO-8 VOLTAGE-CONTROLLED ATTENUATOR MODULE • • • • AVAILABLE IN SURFACE MOUNT LOW VSWR: < 1.5:1 TYP. LOW INSERTION LOSS: 2.3 dB TO 1000 MHz (TYP.) LOW DISTORTION: > 75 dB (TYP.) AT Vcontrol = +15V Specifications (Rev. Date: 3/02)*

SMG2334N

Abstract: MosFET
Contextual Info: SMG2334N 3.5A, 30V, RDS ON 60m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and

SMG2392N

Abstract: MosFET
Contextual Info: SMG2392N 0.6A, 150V, RDS ON 2.6Ω Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to

SMG2336N

Abstract: MosFET
Contextual Info: SMG2336N 5.3 A, 30 V, RDS ON 32 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on)

SMG2306N

Abstract: MosFET
Contextual Info: SMG2306N 3.5A , 30V , RDS ON 58 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal

SMG2361P

Abstract: MosFET
Contextual Info: SMG2361P -3.4A , -60V , RDS ON 210 mΩ Ω P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to

Contextual Info: SMG2328 100V, 250mΩ, 1.5A N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

Contextual Info: Voltage-Controlled Attenuator Module 5 to 2000 MHz G2 / SMG2 V3 Features • • • • Product Image AVAILABLE IN SURFACE MOUNT LOW VSWR: < 1.5:1 TYP. LOW INSERTION LOSS: 2.3 dB TO 1000 MHz (TYP.) LOW DISTORTION: > 75 dB (TYP.) AT Vcontrol = +15V Description

43-m diode

Contextual Info: SMG2305PE -4.5 A, -20 V, RDS ON 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to

Contextual Info: SMG2306N 3.5 A, 30 V, RDS ON 58 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density

SMG2342N

Abstract: MosFET
Contextual Info: SMG2342N 5.2 A, 40 V, RDS ON 86 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to