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    SMF12000 Search Results

    SMF12000 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    F-12030

    Contextual Info: SM F-1 2 0 3 0 - ELECTRONICS Sam sung M icrow ave Sem ico nd ucto r P O W G T O p t i ITI Ì Z G C l GaAs FET 2-10 GH z Description Features The SMF-12030-200 is a packaged version of the SMF12000-200. The chip is a 1200 |im n-channel MESFET with 0.5 nm gate length, utilizing Samsung Microwave’s power


    OCR Scan     		SMF-12030-200 SMF12000-200. SMF-12000-200 F-12030 PDF

    SMF12000-200

    Contextual Info: SMF-12020 ELECTRO NICS Sam sung M icrow ave Sem iconductor P O W G I* O p t i m i z e d GaAs FET 2-12 GHz Description Features The SMF-12020-200 is a packaged version of the SMF12000-200. The chip is a 1200 jam n-channel MESFET with 0.5 p.m gate length, utilizing Samsung Microwave’s power


    OCR Scan     		SMF-12020 SMF-12020-200 SMF12000-200. SMF-12000-200 SMF12000-200 PDF

    f12000

    Abstract: S 042 P "cross reference" SMF12000
    Contextual Info: SM F-12000 Samsung M icrow ave Sem iconductor -100 •200 P O W O f O p tÌV H ÌZ G C Ì GaAs FET 2 -1 6 GHz Description Features The SMF-12000 is a 1200 |xm n-channel MESFET with 0.5 im gate length, utilizing Samsung Microwave’s power optimized P5 process. Ti/Pt/Au gate metallization and


    OCR Scan     		F-12000 SMF-12000 f12000 S 042 P "cross reference" SMF12000 PDF