SMD TRANSISTOR Z8 Search Results

smd transistor marking z8

Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 2N7002BKM SC-101 transistor smd code marking nc
Contextual Info: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

smd transistor marking z8

Abstract: 771-2N7002BKM315
Contextual Info: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

Ericsson Installation guide for RBS 6000

Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

power amplifier 3000W with PCB

Abstract: 3000w audio amplifier 500w car audio amplifier circuit diagram schematic Class D 1KW RMS audio amplifier 12v 1200W AUDIO AMPLIFIER IRFB4227 1200w power amplifier circuit diagram 12v 600W car AUDIO AMPLIFIER CIRCUIT DIAGRAM 3000w inverter circuit diagram 3000w transistor audio amplifier circuit diagram
Contextual Info: IRAUDAMP9 1.7 kW / 2-Ω Single Channel Class D Audio Power Amplifier Using the IRS2092S and IRFB4227 By Israel Serrano and Jun Honda CAUTION: International Rectifier recommends the following guidelines for safe operation and handling of IRAUDAMP9 demo board:

Contextual Info: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.

zener diode 100w

Abstract: diode zener c23 IR430 ZENER DIODE 2.7V 1W IR4301 diode ZENER C2 smd 1N4148WS-FDICT-ND 1N4148 equivalent SMD Zener Diode C37
Contextual Info: IRAUDAMP19 100W/4Ω x 2 Channel Class D Audio Power Amplifier Using the IR4301 By Jun Honda, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP19 Demo board; • Always wear safety glasses whenever operating Demo Board

M38510/10101

Abstract: 14538B MOTOROLA smd transistor 72k code eprom smd atmel QP7C185A M38510-11003 QP7C198 8708 eprom M38510/11201 M38510/10105
Contextual Info: Product Selector Guide March 28, 2005 Analog Description Package SMD Number Part Number DIP 5962-87786 TDC1046 TRW DIP, LCC 5962-88532 TDC1049C1V TRW National A/D Converter, 6-Bit Flash A/D Converter, 9-Bit Comparator, Differential Die Mfg DIP, CAN, FP, LCC

smd diode r6a

Contextual Info: IRAUDAMP11 120W x 3 Channel Class D Audio Power Amplifier Using the IRS2053M and IRF6665 By Jun Honda, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP11 Demo board; • Always wear safety glasses whenever operating Demo Board

k 3436 transistor

Abstract: Z9 TRANSISTOR SMD J210-4 SMD Transistor z6 transistor 6 pin SMD Z2 PD54003 smd z5 transistor transistor SMD Z2 480M PD54003S
Contextual Info: PD54003 - PD54003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE

480M

Abstract: PD55015 PD55015S XPD55015 XPD55015S transistor smd z9
Contextual Info: PD55015 - PD55015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 13.5 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE

SMD Transistor z6

Abstract: Z9 TRANSISTOR SMD transistor 6 pin SMD Z2 smd z5 transistor transistor SMD Z2 480M PD54008 PD54008S XPD54008 XPD54008S
Contextual Info: PD54008 - PD54008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 10 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE

PD57006

Abstract: PD57006S smd transistor z4 j599
Contextual Info: PD57006 PD57006S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

diagram for a 12v 250w power amplifier

Abstract: 250w audio amplifier circuit diagram 200w audio amplifier circuit diagram class D IRS20957S IRAUD
Contextual Info: IRAUDAMP6 250W/8Ω x 2 Channel Class D Audio Power Amplifier Using the IRS20957S and IRF6785 By Jun Honda, Jorge Cerezo and Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP6 Demo board;

SMD Transistor z6

Abstract: 37281 transistor 6 pin SMD Z2 transistor SMD Z2 motorola 986 MRF6408 z11 smd SMD 1206 RESISTOR 100 OHMS smd z5 transistor transistor amplifier 3 ghz 10 watts
Contextual Info: MOTOROLA Order this document by MRF6408/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Power Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers

PD54008L

Abstract: Z9 TRANSISTOR SMD J-STD-020B trimmer cap resistor smd code mil GP 525 smd
Contextual Info: PD54008L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • BROADBAND PERFORMANCES POUT = 8 W WITH 15 dB GAIN @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE

PD57006-E

Abstract: SMD Transistor z6 AN1294 J-STD-020B PD57006S-E PD57006STR-E PD57006TR-E 0821 ST 12611 ZH30
Contextual Info: PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V ■ New RF plastic package PowerSO-10RF

mer capacitor

Abstract: atc100a
Contextual Info: MOTOROLA Order this document by MRF6408/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Power TVansistor D esigne d fo r PCN and PCS base sta tio n a p p lic a tio n s , th e M R F6408 incorporates high value emitter ballast resistors, gold metallizations and offers

J-STD-020B

Abstract: PD55003L
Contextual Info: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION

Contextual Info: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE

transistor motorola 114-8

Abstract: Transistor z1 transistor motorola 351 motorola s 114-8 465B GSM1800 MRF18090A MRF18090AR3 motorola 1815 motorola 114-8
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF18090AR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM and GSM EDGE base station applications with frequencies

SMD package mark code C9

Abstract: PD55025 smd z5 transistor AN1294 PD55015STR-E PD55015TR-E PD55025-E PD55025S PD55025S-E
Contextual Info: PD55025-E PD55025S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 25W with 14.5dB gain @ 500MHz / 12.5V ■ New RF plastic package

AN1294

Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
Contextual Info: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package

PHILIPS capacitors 0.1 mf

Abstract: Transistor t 2 smd motorola
Contextual Info: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier