SMD TRANSISTOR MARKING 71 Search Results

transistor MAR 819

Abstract: transistor MAR 543 sl2 357 BFS17
Contextual Info: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4

"marking E1"

Abstract: BFS17 BFS17R sot 23 transistor 70.2
Contextual Info: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4

Contextual Info: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1

telefunken ta 750

Abstract: S416T smd marking l5 MARKING GA smd transistor marking L5 smd transistor marking ga transistor smd 49 transistor smd marking cu 23marking
Contextual Info: S 416 T TELEFUNKEN Semiconductors Silicon PNP planar RF transistor Applications Oscillator in VHF tuner. Features D Especially suitable for VHF oscillators D SMD package Dimensions in mm Case 23 A 3 DIN 41 869 SOT 23 Marking: GA Weight max. 0.01 g Absolute Maximum Ratings

BFS17

Abstract: transistor BFs 18 BFS17R marking E1
Contextual Info: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

SMD TRANSISTOR MARKING 76

Abstract: smd transistor marking 54 transistor RF 98 smd RK 73 SMD smd marking codes list 722 smd transistor SMD TRANSISTOR MARKING 93 75 smd rf transistor marking SMD TRANSISTOR MARKING 86 smd transistor marking af
Contextual Info: SIEMENS Inhaltsverzeichnis Table of Contents Selection Guide. 13 RF-Transistors and MMICs.

MARKING SMD PNP TRANSISTOR 2a

Abstract: MARKING SMD PNP TRANSISTOR SMD BR 12 FCX717 SMD 8A TRANSISTOR
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX717 Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 12mv Typ. Extremely low equivalent on-resistance. RCE sat 77mÙ at 3A.

smd transistor 718

Abstract: MARKING SMD PNP TRANSISTOR 718 MARKING SMD PNP TRANSISTOR 2a FCX718 transistor smd 6a 6a smd transistor MARKING SMD PNP TRANSISTOR smd 6a transistor
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX718 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 Amps. Extremely low saturation voltage E.g. 16mv Typ. Extremely low equivalent on-resistance. RCE sat 96mÙ at 2.5A.

smd transistor 718

Abstract: FMMT718 TRANSISTOR SMD 1a 9 smd transistor MARKING 2A sot23
Contextual Info: Transistors IC SMD Type Switching Transistor FMMT718 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 IC CONT 2.5A. 0.4 3 625mW power dissipation. 1 Excellent hfe characteristics up to 10A pulsed . 0.55 IC up to 10A peak pulse current.

smd transistor 8A sot23

Abstract: SMD 8A TRANSISTOR SOT-23 marking 717 FMMT717 SMD BR 17
Contextual Info: Transistors IC SMD Type Switching Transistor FMMT717 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 IC up to 10A peak pulse current. 1 0.55 IC CONT 2.5A. +0.1 1.3-0.1 +0.1 2.4-0.1 625mW power dissipation. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Excellent hfe characteristics up to 10A pulsed .

Contextual Info: MCT5211 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, with Base Connection FEATURES • Saturation CTR - MCT5211, > 100 % at IF = 1.6 mA A 1 6 B C 2 5 C • High isolation voltage, 5300 VRMS 4 E • Compliant to RoHS Directive 2002/95/EC and in

SFH6136-X001

Abstract: SFH6136X001 Transistor 03 smd Optocoupler 701 8-SMD SMD TRANSISTOR MARKING 904 smd transistor RL
Contextual Info: SFH6135, SFH6136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output FEATURES NC 1 8 C VCC • Isolation test voltage 5300 VRMS A 2 7 B (VB) • TTL compatible C 3 6 C (VO) • High bit rates: 1 MBit/s NC 4 5 E (GND) • High common mode interference immunity

6 pin TRANSISTOR SMD CODE 21

Contextual Info: 6N1135, 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated FEATURES NC 1 8 C VCC • Operating temperature from - 55 °C to + 110 °C A 2 7 B (VB) • Isolation test voltages: 5300 VRMS C 3 6 C (VO)

Transistor SMD marking code NV

Abstract: TRANSISTOR SMD MARKING CODES MARKING CODE SMD IC data sheet for all smd components double match transistor K TRANSISTOR SMD MARKING CODE SOT363 6 BC847BS TRANSISTOR SMD npn MARKING CODE TRANSISTOR SMD MARKING CODE UA BCM847BS
Contextual Info: BCM847BS NPN matched double transistor; ∆hFE = 10 % Rev. 02 — 6 April 2005 Product data sheet 1. Product profile 1.1 General description NPN matched double transistor in a SOT363 SC-88 SMD plastic package. Matched version of BC847BS. The transistors are fully isolated internally.

Contextual Info: SFH6325, SFH6326 www.vishay.com Vishay Semiconductors High Speed Optocoupler, Dual Channel, 1 MBd, Transistor Output FEATURES A1 1 8 C VCC C1 2 7 C1(VO1) C2 3 6 C2(VO2) 4 5 E(GND) A2 i179071-3 • • • • • • • V D E i179026 DESCRIPTION Isolation test voltage, 5300 VRMS

A07 smd transistor

Abstract: SmD TRANSISTOR a45 TRANSISTOR SMD MARKING CODE A45 placeholder for manufacturing site code
Contextual Info: Product specification NX2301P 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 26 October 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

65E6380

Abstract: IPx65R380E6 IPA65R380E6 Infineon CoolMOS IPD65R380E6 TRANSISTOR SMD MARKING CODE diode smd E6 Diode SMD SJ 02 65E-6 ID32
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R380E6 Data Sheet Rev. 2.0, 2010-01-02 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPD65R380E6, IPI65R380E6 IPB65R380E6, IPP65R380E6

2904 SMD IC

Abstract: electronic power generator using transistor projects DS007787-28 LM358 spice model LM158 national lm358 smd lm358 current monitor lm358 vco LM358H MARKING SMD PNP TRANSISTOR 2t
Contextual Info: LM158/LM258/LM358/LM2904 Low Power Dual Operational Amplifiers General Description Advantages The LM158 series consists of two independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single

MSA422

Abstract: BCM61B BCM62B BCV61 MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 3x
Contextual Info: BCM61B NPN/NPN matched double transistor Rev. 01 — 19 September 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistor in a SOT143B small Surface-Mounted Device SMD plastic package. Matched version of BCV61.

Contextual Info: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.

Contextual Info: DF N1 10B -6 BC857QAS 45 V, 100 mA PNP/PNP general-purpose transistor 25 July 2014 Product data sheet 1. General description PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847QAS.

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

PBHV8540T

Abstract: PBHV9040T MARKING CODE SMD IC
Contextual Info: PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

SMD M2A transistor

Abstract: 6 pin TRANSISTOR SMD CODE XI TRANSISTOR SMD MARKING CODE M2A K TRANSISTOR SMD MARKING CODE T04 TRANSISTOR SMD MARKING CODE XI SMD M2A pnp transistor transistor SMD t04 TRANSISTOR SMD MARKING CODE KE sla 6102 transistor SMD t15
Contextual Info: SIEMENS fl23SbOS OOTbbOl 5 -V L ow -D ro p Fixed V oltage Regulator M2a T L E 4269 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Early warning Reset output low doown to VQ = 1 V Overtemperature protection