SMD TRANSISTOR MARKING 14 Search Results

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD1306 PIN CONFIGURATION NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR (SAW) 3 1 2 Marking CSD1306E=06

SMD transistor MARKING 14

Abstract: smd transistor 25 smd transistor 14 smd transistor r2 MARKING SMD PNP TRANSISTOR transistor smd marking DTA114EE smd marking GI SMD TRANSISTOR MARKING gi Transistor 03 smd
Contextual Info: Transistors SMD Type Digital Transistors DTA114EE Features PNP Epitaxial Planar Silicon Transistor Resistor Built-In Typ. Built-In Bias Resistors Enable The Configuration of An Inverter Circuit Without Connecting External Input Resistors (See Equivalent Circuit).

Contextual Info: SMD Type Product specification DTA114EM Features PNP Epitaxial Planar Silicon Transistor Resistor Built-In Typ. Built-In Bias Resistors Enable The Configuration of An Inverter Circuit Without Connecting External Input Resistors (See Equivalent Circuit).

PBHV8540Z

Abstract: PBHV9040Z SC-73 MARKING CODE SMD IC MARKING SMD IC CODE
Contextual Info: PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

9013 smd

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT 9013 SOT-23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

TRANSISTOR SMD CODE PACKAGE SOT323

Abstract: TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR 2a PMST3904 PMST3906 pmst3906 transistor smd transistor MARKING 2A npn MARKING CODE SMD IC transistor sc-70 marking codes 1325 pnp
Contextual Info: PMST3906 40 V, 200 mA PNP switching transistor Rev. 05 — 29 April 2009 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a SOT323 SC-70 very small Surface-Mounted Device (SMD) plastic package. NPN complement: PMST3904.

FZT753

Abstract: MARKING SMD PNP TRANSISTOR 2a smd transistor MARKING 2A TRANSISTOR SMD PNP 1A SMD TRANSISTOR transistor smd marking smd transistor smd transistor 2A
Contextual Info: Transistors SMD Type PNP Silicon Planar Medium Power Transistor FZT753 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low saturation voltage +0.1 3.00-0.1 Excellent hFE specified up to 2A +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3

FMMT734

Abstract: smd transistor 5k
Contextual Info: Transistors SMD Type Power Darlington Transistor FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1

PTF141501E

Abstract: PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56
Contextual Info: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E and PTF141501E are 150-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital

smd transistor 6d

Abstract: SMD Transistor 6f marking 6d SMD TRANSISTOR MARKING 6D 6E SMD 6F SMD 6F SMD Transistor transistor 625 smd transistor marking 6d 2PD601AQW
Contextual Info: Transistors SMD Type NPN General Purpose Transistor 2PD601AW Features High collector current max. 100 mA Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

dg transistor smd

Abstract: 2SD1624 SMD MARKING SMD npn TRANSISTOR MARKING SMD NPN TRANSISTOR BR 2SD1624
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1624 Features Low collector-to-emitter saturation voltage. Fast switching speed. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage

MARKING SMD TRANSISTOR DQ

Abstract: MARKING SMD TRANSISTOR DR SMD PNP TRANSISTOR MARKING SMD PNP TRANSISTOR 2PB1219A 2PB1219AQ 2PB1219AR 2PB1219AS smd transistor ds 65 smd transistor dr
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor 2PB1219A Features High current max. 500 mA Low voltage (max. 50 V) Low collector-emitter saturation voltage (max. 600 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating

SMD TRANSISTOR MARKING Dd

Abstract: SMD TRANSISTOR MARKING DE MARKING SMD NPN TRANSISTOR BR SMD TRANSISTOR MARKING BR 2SD1419
Contextual Info: Transistors SMD Type NPN Silicon epitaxial Transistor 2SD1419 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage

2SD1621

Abstract: SMD TRANSISTOR MARKING Dd smd transistor 560
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1621 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity,

5as SMD Transistor

Contextual Info: Transistor IC Transistor Transistors DIP SMDType Type SMD Type Product specification 2SA1255 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High voltage. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

BC868

Abstract: SMD MARKING 104 BC868-25 1V160
Contextual Info: Transistors SMD Type NPN Medium Power Transistor BC868 Features High current Two current gain selections 1.2 W total power dissipation. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage open emitter VCBO 32 V Collector-emitter voltage (open base)

IC 555

Abstract: datasheet of ic 555 datasheet ic 555 FMMT555 ic 555 datasheet
Contextual Info: Transistors SMD Type Medium Power Transistor FMMT555 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 1 Amp continuous current 0.55 150 Volt VCEO 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1

transistor smd marking NE

Abstract: transistor smd marking 107 MARKING NE smd marking NE 107 10V smd smd NE 2SK1585
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK1585 SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Has low on-state resistance 1 RDS on =1.0 MAX.@VGS=4.0V,ID=0.5A 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1

BD transistor

Abstract: smd marking BD 2SB1189 BD marking
Contextual Info: Transistors SMD Type Medium Power Transistor 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80

2SA1579

Abstract: smd transistor rr
Contextual Info: Transistors SMD Type High-Voltage Amplifier Transistor 2SA1579 Features High breakdown voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120

Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KTC4372 Features High Voltage: VCEO=150V High Transition Frequency:fT=120MHz Small Flat Package Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Colletor-Base Voltage Parameter VCBO 200 V

Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L- 000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION NPN 1 = BASE 2 = E M ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS

23FEB

Abstract: sfh6206-2x001
Contextual Info: SFH620A, SFH6206 Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input FEATURES A/C 1 4 C C/A 2 3 E • Good CTR linearity depending on forward current • Isolation test voltage, 5300 VRMS 1 • High collector emitter voltage, VCEO = 70 V • Low saturation voltage

PMBT3906YS

Abstract: TRANSISTOR SMD CODE PACKAGE SOT363 NXP SMD TRANSISTOR MARKING CODE MARKING CODE SMD IC
Contextual Info: PMBT3906YS 40 V, 200 mA PNP/PNP general-purpose double transistor Rev. 02 — 13 May 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose double transistor in a SOT363 SC-88 very small Surface-Mounted Device (SMD) plastic package.