SMD TRANSISTOR JD Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

Contextual Info: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 — 16 May 2014 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

transistor SMD g 28

Contextual Info: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

ROGERS DUROID 6002

Contextual Info: BLA6H0912L-1000; BLA6H0912LS-1000 LDMOS avionics power transistor Rev. 2 — 10 February 2014 Objective data sheet 1. Product profile 1.1 General description 1000 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz frequency range.

smd dual darlington transistor

Abstract: TRANSISTOR SMD 10p Theta-J theta-j solid smd ss 5 transistor Transistor z1 smd LDA100 LDA110 LDA200 LDA201
Contextual Info: CLARE C P / SOLI» STATE 2SE D 21M4TÛ4 0QD01GÖ S S3. LDÂ Series Solid-State Current Sensors The Theta-J LDA Series of solid-state current sensors is a family of optically coupled phototransistors that service a wide range of control applications where input to output electrical isolation is desirable.

kl4 transistor

Abstract: smd transistor kl4 SMD kl4
Contextual Info: Bill of Materials for the NCV786XXAR10GEVK Evaluation Board Designator Quantity Description Value Tolerance Footprint Manufacturer Manufacturer Part Number Substitution Lead Free Allowed 2 2 1 1 Capacitor SMD X7R Capacitor SMD X7R Capacitor SMD X7R Capacitor SMD ELCO Low ESR

Contextual Info: BLA6H0912L-1000; BLA6H0912LS-1000 LDMOS avionics power transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 1000 W LDMOS pulsed power transistor intended for TCAS and IFF applications at 1030 MHz. Table 1. Test information

Contextual Info: BLC8G27LS-160AV Power LDMOS transistor Rev. 2 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1.

transistor SMD 12W MOSFET

Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
Contextual Info: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Contextual Info: BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 2 — 22 April 2013 Objective data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

transistor 742

Abstract: j494 transistor blf8g22ls
Contextual Info: BLF8G22LS-270V; BLF8G22LS-270GV Power LDMOS transistor Rev. 2 — 3 December 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.

PCE3667CT-ND

Abstract: capacitor 56J pF a 69154 CLF1G0060-30 SOT1227A 200V470
Contextual Info: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.

SOT1227A

Contextual Info: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 4 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.

Contextual Info: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 3 — 30 May 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.

Contextual Info: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.

sot1227

Abstract: 082279 SOT1227A Model 284J 226J
Contextual Info: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.

siemens Transistoren

Abstract: induktive triac ansteuerung smd transistors SIPMOS application note BSS98 equivalent Siemens Halbleiter Bauelemente Siemens Halbleiter
Contextual Info: Technische Angaben Technical Information SIEMENS SIPMOS Kleinsignal-Bauelemente SIPMOS® Small-Signal Components MOS-Transistoren im Bereich 50 V . 800 V und 40 mA . 3800 mA. IGBT: 1200 V; 2500 mA MOS transistors in the range of 50 V . 800 V and 40 mA . 3800 mA.

Contextual Info: BLP05M7200 Power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for various applications such as ISM and RF plasma lighting at frequencies from 425 MHz to 450 MHz. Table 1.

Contextual Info: BLF8G27LS-100 Power LDMOS transistor Rev. 2 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1.

Contextual Info: BLF8G20LS-230V Power LDMOS transistor Rev. 1 — 7 November 2013 Preliminary data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.

Contextual Info: BLP8G21S-160PV Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test