SMD TRANSISTOR A9 Search Results

smd code A9 3 pin transistor

Abstract: smd transistor a9 NXP SMD TRANSISTOR MARKING CODE PBSS5612PA
Contextual Info: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: Transistor IC DIP SMDType Type Product specification A42 TO-92 Unit: mm +0.25 4.58 –0.15 • Features 4.58 ±0.20 ● Epitaxial planar die construction. ● Ideal for medium power amplification and switching. ● Complementary PNP type available A92 . ±0.10

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

6R190C6

Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

transistor SMD p16

Abstract: transistor SMD b22 ISL95901 smd TRANSISTOR code b6 CRCW06033162F
Contextual Info: Application Note 1743 Author: Jun Xiao Wide VIN Dual Integrated Buck Regulator With 6A/6A Continuous Output Current and LDOs Specifications FSW POSITION SWITCHING FREQUENCY kHz FSW = GND 300 FSW = OPEN 500 FSW = VCC 1000 Quick Setup Guide VIN RANGE (V) VOUT

transistor smd hq

Contextual Info: f u H v i u S E M I C O N D U C T O R A R R HM-65642 IS 8K X 8 Asynchronous CMOS StStiC RAM January 1992 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which

Contextual Info: SIEMENS 5-V Low-Drop Fixed-Voltage Regulator TLE 4264 G Features • • • • • • • Í Output voltage tolerance < ± 2 % Low-drop voltage Very low current consumption Overtemperature protection Short-circuit proof Suitable for use in automotive electronics

smd transistor marking xy

Abstract: GRM42-2X5R226K6 ECJ4YB0J226M DO1608C-103 IS44A LM2608 SMD MARKING CODE 518 TAIYO soldermask IS43A
Contextual Info: LM2608 400mA Sub-miniature, High Efficiency, Programmable DC-DC Converter with Linear Mode General Description Key Specifications The LM2608 step-down DC-DC converter is optimized for powering ultra-low voltage circuits from a single Lithium-Ion cell. It provides up to 400mA over an input voltage range of

shinano em-440

Abstract: MPLAB inverter assembly code DR-29312
Contextual Info: Motor Control Starter Kit User’s Guide 2011 Microchip Technology Inc. DS75015A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

hm 6203

Abstract: 841320 J20.C Package rm 6203
Contextual Info: HM-65262 HARRIS S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM M a rc h 1 9 9 7 Features Description • Fast Access Time. 70/85ns Max • Low Standby Current. 50|.iA Max

PCI9054-PQFP176

Abstract: B34 SMD Transistor PC19054 B49 diode smd ISP1611 PLX9054 742-08-3-103-J-XX smd transistor b35 SmD TRANSISTOR a45 smd transistor 2x5
Contextual Info: Philips Semiconductors Connectivity April 2002 UM10006-01 ISP1161x PCI Evaluation Board User’s Guide Rev. 1.0 Revision History: Revision Rev. 1.0 Date April, 2002 Descriptions First release Author Jason Ong and Alvin Lim We welcome your feedback. Send it to wired.support@philips.com.

30C162

Abstract: 12x10 character TRANSISTOR SMD MARKING CODE kh "character rom" siemens S43 SMD marking code AE SMD Transistor siemens flash smd marking KH 235L P-LCC-68-1
Contextual Info: MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 06.97 Previous Releases: 11.96 Page Subjects changes since last revision 20 Now also covers SDA 5275-2 and SDA 5273-2 versions; Reset/chip initialization update

HX6256

Abstract: D-10
Contextual Info: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

B34 SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE jg smd TRANSISTOR code marking wL TRANSISTOR SMD MARKING CODE XI SMD marking B34 TLE4278G TLE4278 AED01546 AEP02113 SD 4278
Contextual Info: SIEMENS flE3SbOS □□'ìbfc.fig LSI 5-V Low -D rop Fixed V oltage R egulator TL E 4 278 G Preliminary Data Features • • • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Separated reset and watchdog output

HX84050

Contextual Info: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2

TRANSISTOR SMD K23

Abstract: B DIN 5463
Contextual Info: User's Guide SLAU296 – October 2009 ADS54RF63-ADX4 Single-channel, 12-bit, 2.2 GSPS Evaluation Module EVM 1 2 3 4 5 6 7 8 9 10 Contents Introduction . 2

Contextual Info: CBTW28DD14 14-bit bus switch/multiplexer for DDR2/DDR3/DDR4 applications Rev. 6 — 25 July 2014 Product data sheet 1. General description This 14-bit bus switch/multiplexer MUX is designed for 1.5 V or 1.8 V supply voltage operation, POD_12, SSTL_12, SSTL_135, SSTL_15 or SSTL_18 signaling and CMOS

B38 SMD Transistor

Abstract: 822273-1 ZTR32 AM79C874VC AM79C874 schematic capacitor COG xr7 pe69012 smd LM393 ZTR11 Kemet C0805C104K5RAC
Contextual Info: 5 +3VR +3VR C27 0.01UF CC0805 4 +3VR C38 0.01UF CC0805 +3VR C29 0.01UF CC0805 C21 0.01UF CC0805 +3VR +3VR C20 0.1UF CC0805 +3VR C32 0.1UF CC0805 3 2 +3VR C37 0.1UF CC0805 1 +3VR EEDI/LED0# LED2#/SRDCLK C14 0.1UF CC0805 EEDI/LED0# LED2#/SRDCLK R1 1.5K CR0805

FTSH-105-01-F-DV-K

Abstract: Ampire LCD earthquake Detection systems BL-5B sensor LDR ldr sensor ZF1-20-01-T-WT smd TRANSISTOR code b6 weather monitoring USING MICROCONTROLLER led ldr sensor
Contextual Info: UM0857 User manual Smart monitoring system STEVAL-IFS014V1 and STEVAL-IFS015V1, based on the STM32x Introduction This document explains the functioning of the "smart monitoring system" and also serves as a quick reference manual to operate the system. The smart monitoring system works on

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (Leff= 0.6 )im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)

Contextual Info: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 |im Low Power Process (Leff= 0.5 |am) • Read/Write Cycle Times < 25 ns (-55 to 125°C)

Contextual Info: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)