SMD TRANSISTOR 312 Search Results

TRANSISTOR BC 448 smd

Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors

PBLS4003D

Abstract: tsop6 marking 312
Contextual Info: PBLS4003D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)

PBLS4005D

Contextual Info: PBLS4005D 40 V PNP BISS loadswitch Rev. 02 — 19 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)

PBLS4004D

Abstract: tsop6 marking 312
Contextual Info: PBLS4004D 40 V PNP BISS loadswitch Rev. 03 — 6 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)

PBLS4001D

Contextual Info: PBLS4001D 40 V PNP BISS loadswitch Rev. 02 — 5 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)

PBLS4003D

Abstract: 15096
Contextual Info: PBLS4003D 40 V PNP BISS loadswitch Rev. 02 — 4 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)

PBLS4002D

Contextual Info: PBLS4002D 40 V PNP BISS loadswitch Rev. 02 — 4 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)

006A

Abstract: PBLS4004D SC74 marking 345
Contextual Info: PBLS4004D 40 V PNP BISS loadswitch Rev. 02 — 19 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)

PBLS4005D

Contextual Info: PBLS4005D 40 V PNP BISS loadswitch Rev. 03 — 6 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)

PBLS4002D

Contextual Info: PBLS4002D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)

PBLS4001D

Contextual Info: PBLS4001D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)

PBSS304ND

Abstract: PBSS304PD tsop6 marking 312 TRANSISTOR SMD MARKING CODE AJ
Contextual Info: PBSS304PD 80 V, 3 A PNP low VCEsat BISS transistor Rev. 02 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS5160T 60 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

SMD transistor MARKING CODE 312

Abstract: SOT23-4 MARKING U6 PBSS5160T BCP52 BCX52 PBSS4160T TRANSISTOR SMD MARKING CODE 04 MARKING CODE SMD IC NXP TRANSISTOR SMD MARKING CODE SOT23 pbss5160
Contextual Info: PBSS5160T 60 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Contextual Info: SO T8 83 PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: PMZB350UPE 20 V, single P-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

NXP date code marking

Abstract: a/NXP date code marking
Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

110N06L

Abstract: smd diode 78a smd diode marking 78A SMD diode D94 PG-TO220-3 PG-TO263 marking d78 IPP110N IPP110N06L diode smd 312
Contextual Info: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 11 m: 78 A • 175 °C operating temperature