SMD TRANSISTOR 2D Search Results

Contextual Info: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

2d SMD PNP TRANSISTOR

Abstract: SMD TRANSISTOR MARKING 2D a93 smd smd transistor 2d transistor A92 smd marking cb SOT23 transistor smd TRANSISTOR 2D SOT23 SMD TRANSISTOR MARKING 2e 2d SMD TRANSISTOR CMBT A92 2d sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA92 CMBTA93 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA92 = 2D CMBTA93 = 2E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

FMMT5087

Abstract: marking 2M
Contextual Info: Transistors IC SMD Type Small Signal Transistor FMMT5087 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Small signal transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

Contextual Info: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA

Q67042-S4057

Abstract: SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303
Contextual Info: Preliminary data SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version 30 V 3 mΩ

3P03L04

Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
Contextual Info: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V

Q67060-S6038

Abstract: SPB100N04S2L-03 SPP100N04S2L-03 Diode 1_b SMD PN04L03
Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 40 RDS on max. SMD version 3 ID

pn06l05

Abstract: SPB100N06S2L-05 SPB100N06S2L05 SPP100N06S2L-05 Q67060-S6042
Contextual Info: SPP100N06S2L-05 SPB100N06S2L-05 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 55 RDS on max. SMD version 4.4

2N04L03

Abstract: SPB80N04S2L-03 SPP80N04S2L-03
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1

2n0404

Abstract: ANPS071E SPB80N04S2-04 OPTIMOS TRANSISTOR transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag SPI80N04S2-04 SPP80N04S2-04 DSA003760
Contextual Info: SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature P- TO262 -3-1 • Avalanche rated VDS 40 V RDS on max. SMD version 3.4 mΩ ID 80 A P- TO263 -3-2

2n0404

Abstract: SPB80N04S2-04 SPP80N04S2-04
Contextual Info: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version •=175°C operating temperature ID • Avalanche rated P-TO263-3-2 40 V 3.4 mΩ 80 A P-TO220-3-1

PN0605

Abstract: SPB100N06S2-05 SPP100N06S2-05 6E60 Q67060-S6049
Contextual Info: SPP100N06S2-05 SPB100N06S2-05 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on max. SMD version 4.7 m
ID 100 A P-TO263-3-2 Type

PN0404

Abstract: 6790 SPB100N04S2-04 SPP100N04S2-04
Contextual Info: SPP100N04S2-04 SPB100N04S2-04 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 40 V • Enhancement mode RDS on max. SMD version 3.3 mΩ • 175°C operating temperature ID 100 A • Avalanche rated P-TO263-3-2 P-TO220-3-1

PN0807

Abstract: SPB100N08S2-07 SPP100N08S2-07 smd diode UM 07 BSPB100N08S2-07 66a smd
Contextual Info: SPP100N08S2-07 SPB100N08S2-07 Preliminary data OptiMOS
=Power-Transistor Feature
N-Channel Product Summary
Enhancement mode VDS 75 V
175°C operating temperature RDS on max. SMD version 6.8 m
Avalanche rated ID 100 A
dv/dt rated P-TO263-3-2 Type

2n0404

Abstract: ANPS071E SPB80N04S2-04 SPP80N04S2-04
Contextual Info: SPP80N04S2-04 SPB80N04S2-04 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 40 RDS on max. SMD version 3.4 m ID 80 A P- TO263 -3-2 Type Package Ordering Code

PN0807

Abstract: smd diode marking code SM ANPS071E SPB100N08S2-07 SPP100N08S2-07 INFINEON PART MARKING to263 6020G Diode smd code sm 68M100
Contextual Info: SPP100N08S2-07 SPB100N08S2-07 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • 175°C operating temperature P- TO263 -3-2 • Avalanche rated 75 V 6.8 mΩ 100 A P- TO220 -3-1 • dv/dt rated

ANPS071E

Abstract: PN0605 SPB100N06S2-05 SPP100N06S2-05 infineon smd package
Contextual Info: SPP100N06S2-05 SPB100N06S2-05 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • 175°C operating temperature P- TO263 -3-2 • Avalanche rated 55 V 4.7 mΩ 100 A P- TO220 -3-1 • dv/dt rated

PN08L07

Abstract: SMD MARKING "68A" ANPS071E SPB100N08S2L-07 SPP100N08S2L-07
Contextual Info: SPP100N08S2L-07 SPB100N08S2L-07 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level P- TO263 -3-2 • 175°C operating temperature 75 V 6.5 mΩ 100 A P- TO220 -3-1 • Avalanche rated

SMD DIODE 615 200A

Abstract: 2N0303 SPB80N03S2-03 SPP80N03S2-03
Contextual Info: SPP80N03S2-03 SPB80N03S2-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3.1 m
ID 80 A P-TO263-3-2 Type

2N03L06

Abstract: s4089 SPB80N03S2L-06 SPI80N03S2L-06 SPP80N03S2L-06 OPTIMOS
Contextual Info: Preliminary data SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 OptiMOSâ Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) P-TO262-3-1 VDS 30 RDS(on) max. SMD version 5.9 m
ID 80

ANPS071E

Abstract: IEC61249-2-21 SPB100N03S2-03 SPP100N03S2-03
Contextual Info: SPB100N03S2-03G OptiMOS TM Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3 mΩ 100 ID • Excellent Gate Charge x RDS(on) product (FOM) A P-TO263 -3 • Superior thermal resistance • 175°C operating temperature

2n0605

Abstract: BSPP80N06S2-05 SPP80N06S2-05 d 132 smd code diode sm smd diode marking
Contextual Info: SPP80N06S2-05 SPB80N06S2-05 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on max. SMD version 4.8 m ID 80 A P- TO263 -3-2 Type Package Ordering Code

2n03l03

Abstract: SPB80N03S2L-03 SPP80N03S2L-03
Contextual Info: SPP80N03S2L-03 SPB80N03S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on product (FOM) VDS 30 RDS(on) max. SMD version 2.8 m
ID 80 A P-TO263-3-2 V

ANPS071E

Abstract: SPB100N04S2L-03 SPP100N04S2L-03
Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level V 3 mΩ 100 P- TO263 -3-2 • 175°C operating temperature 40 A P- TO220 -3-1 • Avalanche rated