SMD TRANSISTOR 2D Search Results

2d SMD PNP TRANSISTOR

Abstract: TRANSISTOR SMD MARKING CODE 2d smd transistor 2d SMD TRANSISTOR MARKING 2D smd TRANSISTOR code marking 05 sot23 MARKING CODE SMD IC smd TRANSISTOR code marking 2d 2D SMD TRANSISTOR TRANSISTOR SMD MARKING CODE transistor smd marking 2d
Contextual Info: SMD High Voltage Transistor PNP MMBTA92 SMD High Voltage Transistor (PNP) Features • This device is designed for high voltage driver applications • RoHS compliance SOT-23 Mechanical Data SOT-23, Plastic Package Case: Terminals: Weight: Solderable per MIL-STD-202G, Method 208

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

2d SMD PNP TRANSISTOR

Abstract: TRANSISTOR SMD MARKING CODE 2d smd transistor marking code 24 smd TRANSISTOR code marking 2d SMD TRANSISTOR MARKING 2D "marking Code" V2 sot89
Contextual Info: SO T8 9 PXTA92 300 V, 100 mA PNP high-voltage transistor Rev. 6 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description PNP high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.

2d SMD PNP TRANSISTOR

Abstract: 2d SMD npn TRANSISTOR TRANSISTOR SMD MARKING CODE 2d
Contextual Info: SO T8 9 PXTA92 300 V, 100 mA PNP high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description PNP high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.

Contextual Info: SO T8 9 PXTA92 300 V, 100 mA PNP high-voltage transistor Rev. 6 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description PNP high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.

Contextual Info: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

2d SMD PNP TRANSISTOR

Abstract: SMD TRANSISTOR MARKING 2D a93 smd smd transistor 2d transistor A92 smd marking cb SOT23 transistor smd TRANSISTOR 2D SOT23 SMD TRANSISTOR MARKING 2e 2d SMD TRANSISTOR CMBT A92 2d sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA92 CMBTA93 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA92 = 2D CMBTA93 = 2E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

2d SMD PNP TRANSISTOR

Abstract: smd a92 A93 SMD SMD TRANSISTOR MARKING 2D 2d SMD TRANSISTOR smd transistor marking A92 A92 SMD SMD TRANSISTOR MARKING 2e transistor smd marking 2d transistor A92
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA92 CMBTA93 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA92 = 2D CMBTA93 = 2E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

2d SMD PNP TRANSISTOR

Abstract: SMD TRANSISTOR MARKING 2D A93 SMD smd marking cb SOT23 transistor CMBTA92 CMBTA93 marking A93 2D SMD TRANSISTOR smd a92
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBTA92 CMBTA93 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA92 = 2D

FMMT5087

Abstract: marking 2M
Contextual Info: Transistors IC SMD Type Small Signal Transistor FMMT5087 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Small signal transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

Contextual Info: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA

Q67042-S4057

Abstract: Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303
Contextual Info: SPP100N03S2-03 SPB100N03S2-03 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3 ID Package Ordering Code Marking

2N0807

Abstract: Q67060-S6082 Q67040-S4263 2n08 spp80n08s2-07 Q67040-S4264
Contextual Info: Preliminary data OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 P-TO262-3-1 VDS 75 V RDS on max. SMD version 7.1 mΩ ID

Contextual Info: DF N 20 20 MD -6 PMPB200EN 100 V N-channel Trench MOSFET 30 May 2013 Objective data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Q67042-S4057

Abstract: SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303
Contextual Info: Preliminary data SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version 30 V 3 mΩ

Q67042-S4057

Abstract: ANPS071E SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303 Q67042-S4058
Contextual Info: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID • Superior thermal resistance

3P03L04

Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
Contextual Info: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V

Q67060-S6038

Abstract: SPB100N04S2L-03 SPP100N04S2L-03 Diode 1_b SMD PN04L03
Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 40 RDS on max. SMD version 3 ID

pn06l05

Abstract: SPB100N06S2L-05 SPB100N06S2L05 SPP100N06S2L-05 Q67060-S6042
Contextual Info: SPP100N06S2L-05 SPB100N06S2L-05 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 55 RDS on max. SMD version 4.4

2n0303

Abstract: INFINEON PART MARKING SPB80N03S2-03 smd diode 2420 SMD MARKING CODE transistor SMD TRANSISTOR MARKING code TC transistor vds rds 12 id 80a to220 ANPS071E SPI80N03S2-03 SPP80N03S2-03
Contextual Info: SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3.1 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID 80 A • Superior thermal resistance

Q67042-S4057

Contextual Info: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS =Power-Transistor Product Summary Feature 30 VDS
N-Channel RDS on
Enhancement mode ID
Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance max. SMD version P- TO262 -3-1 V m

2N04L03

Abstract: SPB80N04S2L-03 SPP80N04S2L-03
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1

2n0404

Abstract: ANPS071E SPB80N04S2-04 OPTIMOS TRANSISTOR transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag SPI80N04S2-04 SPP80N04S2-04 DSA003760
Contextual Info: SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature P- TO262 -3-1 • Avalanche rated VDS 40 V RDS on max. SMD version 3.4 mΩ ID 80 A P- TO263 -3-2

2n0404

Abstract: SPB80N04S2-04 SPP80N04S2-04
Contextual Info: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version •=175°C operating temperature ID • Avalanche rated P-TO263-3-2 40 V 3.4 mΩ 80 A P-TO220-3-1