SMD TRANSISTOR 168 Search Results

equivalent ZO 607

Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor
Contextual Info: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872

702 transistor smd code

Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
Contextual Info: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872

16-2-472

Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
Contextual Info: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.

Contextual Info: PBHV8215Z 150 V, 2 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 November 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Contextual Info: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Wide-Viewing Angle CR 50 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR50TE-DLF with daylight

V8215Z

Abstract: SC-73 MARKING CODE SMD IC PBHV8215Z 170KW
Contextual Info: PBHV8215Z 150 V, 2 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 November 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Contextual Info: TCNT2000 www.vishay.com Vishay Semiconductors Reflective Optical Sensor with Transistor Output A E FEATURES • Package type: SMD • Detector type: phototransistor • Dimensions L x W x H in mm : 3.4 x 2.7 x 1.5 • Operating range within > 20 % relative collector

Contextual Info: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT849 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE(sat)36mÙ at 5A. 7 Amp continuous collector current (20 Amp peak).

TCNT2000

Abstract: Reflective Optical Sensor
Contextual Info: TCNT2000 www.vishay.com Vishay Semiconductors Reflective Optical Sensor with Transistor Output A E FEATURES • Package type: SMD • Detector type: phototransistor • Dimensions L x W x H in mm : 3.4 x 2.7 x 1.5 • Operating range within > 20 % relative collector

npn smd 2a

Abstract: FZT869
Contextual Info: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT869 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. 7 Amp continuous collector current (20 Amp peak).

Contextual Info: SO T2 3 BSH205G2 20 V, P-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

k22 sot23

Abstract: semiconductor date Code smd-transistor
Contextual Info: Labeling Specification LABEL SPECS 167 Labeling Specification Central Semiconductor Corp. www.centralsemi.com CENTRAL - ® - 1.0 Purpose: Sem iconductor Devices C M K T 2 2 2 2 A TR ITEM. SMD-TRANSISTOR D E S C R IP T IO N . ®"pr ~ Discrete CUSTOMER ITEM.

BUZ102

Abstract: smd transistor py
Contextual Info: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dvfdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ102 50 V b 42 A flbston Package Ordering Code

smd diode T42

Abstract: smd transistor 718
Contextual Info: SIEMENS BUZ 102AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • di//di rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ 102AL Vds 50 V b flDS on

4P04L03

Abstract: IPP120P04P4L-03 IPB120P04P4L-03
Contextual Info: IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.1 mW ID -120 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1

C67078-S1351-A2

Contextual Info: BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code

smd transistor 718

Abstract: 42AL bss 97 transistor
Contextual Info: SIEMENS B U Z 102A L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • d tfd f rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ 102AL VÒS 50 V b 42 A

102AL

Abstract: C67078-S1356-A2
Contextual Info: BUZ 102AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature Pin 1 • also in TO-220 SMD available Pin 2 G Pin 3 D S Type VDS ID RDS on

buz102

Contextual Info: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/d/ rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 Type Vbs BUZ102 50 V b 42 A Pin 3 D G S ^DS on

Contextual Info: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow

4P04L08

Abstract: IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08
Contextual Info: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow

4N06H1

Abstract: IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2
Contextual Info: IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.1 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow

4P04L04

Abstract: IPP80P04P4L-04 4P04 IPI80P04P4L-04
Contextual Info: IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow

716296

Abstract: 6 PIN SMD IC FOR SMPS f3 double diode smd 1812B104K501 Finepower 716296 ICE3A0365 smd diode p80 650V-CoolMOS pin SMD IC FOR SMPS circuits zener diode 6w
Contextual Info: Application Note, V1.1, Apr 2006 AN-EVALM-ICE3A0365 6W 12.5V SMPS Evaluation Board with CoolSETTM F3 ICE3A0365 CoolBIAS-F3 Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2006-04-11 Published by Infineon Technologies Asia Pacific, 168 Kallang Way,