SMD SINGLE GATE Search Results

10K ECL

Contextual Info: Alpha-Numeric Part Number Index P/N S eries SMD Pkg Options Description Package SMD Pkg Options Description P/N S eries Package A C M D L -X X X G .J Adv. CMOS Single Out 8 Pin DIP P9- 19 H C D L-X X X (G .J ) HCMOS Single Output 14 Pin DIP A I3 D -X X X

Contextual Info: PRODUCT DETAIL Part Num: IXUV170N075S Description: POWER DEVICES > DISCRETE MOSFETs > N-Channel: Trench-Gate Power MOSFETs > 75V 1st Generation Trench Gate Power MOSFETs Configuration: Single Package Style: PLUS-220 SMD Status: Active Part Parameter IXUV170N075S

TRAILING TTL ACTIVE DELAY LINE

Abstract: rhombus delay lines
Contextual Info: Logic Buffered Delay Modules Gullwing & J Bend SMD Versions Logic Families: TTL - FAST - AC • ECL Programmables, Pulse Width Generators, Gated Oscillators, Customs. Output Delays up to 1000ns Single, Dual /Triple Independent, S&10 Tap Standard Configurations

KDS 12 MHZ crystal 4 pin

Abstract: DSO321SBN DSO321SBM KDS 8 MHZ crystal DSO531SBM DSO321 KDS 12 MHZ crystal CRYSTAL "20 mhZ" KDS KDS 6 MHZ crystal Bn smd code
Contextual Info: SMD Crystal Oscillators Features NEW Low current consumption 5V type 3-state function ● DS0＊＊＊SBM:General purpose +5.0V HCMOS oscillator ● DS0＊＊＊SBN:Optimized characteristic for single gate

5962F0251101VXC

Abstract: 5962F0251101QEC 5962F0251101QXC IS1-1825ASRH-8 IS1-1825ASRH-Q IS-1825ASRH IS9-1825ASRH-8 IS9-1825ASRH-Q rt/CDFP4-F20 rt/5962F0251101VXC
Contextual Info: IS-1825ASRH TM Data Sheet February 2002 Single Event and Total Dose Hardened, High-Speed, Dual Output PWM FN9065 Features • Electrically Screened to DSCC SMD # 5962-02511 The single event and total dose hardened IS-1825ASRH pulse width modulator is designed to be used in high

5962F0251101VXC

Abstract: ld smd transistor MKT .1K IS-1825ASRH ISL71823ASRH ISL71823ASRHQD ISL71823ASRHQF IS0-1825ASRH-Q 5962F0251101QXC d16 smd
Contextual Info: IS-1825ASRH, ISL71823ASRH Data Sheet September 25, 2008 Single Event and Total Dose Hardened, High-Speed, Dual Output PWMs FN9065.3 Features • Electrically Screened to DSCC SMD # 5962-02511 The single event and total dose hardened IS-1825ASRH and ISL71823ASRH pulse width modulators are designed to be

IS-1825ASRH

Abstract: 5962F0251101QEC 5962F0251101QXC 5962F0251101VEC IS1-1825ASRH-8 IS9-1825ASRH-8 IS9-1825ASRH-Q
Contextual Info: IS-1825ASRH Data Sheet June 14, 2005 Single Event and Total Dose Hardened, High-Speed, Dual Output PWM FN9065.1 Features • Electrically Screened to DSCC SMD # 5962-02511 The single event and total dose hardened IS-1825ASRH pulse width modulator is designed to be used in high

Contextual Info: IS-1825ASRH, ISL71823ASRH Data Sheet February 19, 2008 Single Event and Total Dose Hardened, High-Speed, Dual Output PWMs FN9065.2 Features • Electrically Screened to DSCC SMD # 5962-02511 The single event and total dose hardened IS-1825ASRH and ISL71823ASRH pulse width modulators are designed to be

scr tag 12

Abstract: D15C WD1050 bit-slice
Contextual Info: WESTERN O R P O R A T I O N WD1050 SMD C D IG IT A L WD1050 SMD Controller/Formatter FEATURES • 16 BIT HOST INTERFACE 9.677 MBITS/SEC DATA RATE SINGLE/MULTIPLE SECTOR TRANSFERS FIXED SECTOR FROMAT TTL COMPATIBLE INPUT/OUTPUT 68 PIN JEDEC TYPE C CHIP CARRIER PACKAGE

Contextual Info: STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40N6SY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

Contextual Info: STRH13N20SY3 N-channel 200V - 0.18Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH13N20SY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

smd 345

Abstract: bit-slice WD1050 smd code BCR
Contextual Info: WESTERN C O R P O R DIGITAL A T I O N WD1050 SMD Controller/Formatter FEATURES • 16 BIT HOST INTERFACE 9.677 MBITS/SEC DATA RATE SINGLE/MULTIPLE SECTOR TRANSFERS FIXED SECTOR FROMAT TTL COMPATIBLE INPUT/OUTPUT 68 PIN JEDEC TYPE C CHIP CARRIER PACKAGE COMPATIBLE WITH SMD, MMD, FHT, LMD, AND

smd DIODE code marking 20A

Abstract: smd code diode 20a STRH40N6SY1 STRH40N6SY3
Contextual Info: STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40N6SY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

CT8-13

Contextual Info: STRH13N20SY1 STRH13N20SY3 N-channel 200V - 0.18Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH13N20SY3 200 V STRH13N20SY3 200 V s ct 2 1 • Low RDS(on) ■ Fast switching ■ Single event effect (SEE) hardned ■

Contextual Info: M MOTOROLA Military 54LS30 Single 8-Input Positive NAND Gate MPO ELECTRICALLY TESTED PER: MIL-M-38510/30009 llltlll AVAILABLE AS: 1) JAN: JM38510/30009BXA 2) SMD: N/A 3)883: 54LS30/BXAJC LOGIC DIAGRAM X = CASE OUTLINE AS FOLLOWS: PACKAGE: CERDIP: C CERFLAT: D

Contextual Info: v4.0 40MX and 42MX FPGA Families Features • QML Certification High Capacity • Ceramic Devices Available to DSCC SMD • • • • • Ease of Integration Single Chip ASIC Alternative 2,000 to 36,000 Available Logic Gates Up to 2.5 Kbits Configurable Dual-Port SRAM

STRH13N20SY3

Abstract: ST MAKE SMD DIODE
Contextual Info: STRH13N20SY3 N-channel 200V - 0.18Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH13N20SY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

A42MX16 datasheet

Abstract: 240 pin rqfp drawing Actel A40MX04 SMD TRANSISTOR w18 A42MX36 smd diode wd v3 5252 F 1009 "integrated circuit" transistor smd w16 a42mx A42MX09
Contextual Info: v 3. 0 40MX and 42MX Families FPGAs Features • QML Certification High Capacity • Ceramic Devices Available to DSCC SMD • • • • • Ease of Integration Single Chip ASIC Alternative 2,000 to 36,000 Available Logic Gates Up to 2.5 Kbits Configurable Dual-Port SRAM

STRH13N20SY1

Abstract: JESD97 STRH13N20SY3 STRH30N20SY3
Contextual Info: STRH13N20SY1 STRH13N20SY3 N-channel 200V - 0.18Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH13N20SY3 200 V STRH13N20SY3 200 V 2 1 • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

STRH40N6SY1

Abstract: JESD97 STRH40N6SY3
Contextual Info: STRH40N6SY1 STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N6SY1 60 V STRH40N6SY3 60 V 2 1 • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

5252 F 1108

Abstract: 5252 F 1009 "integrated circuit" WD 969
Contextual Info: v 4. 0 40MX and 42MX FPGA Families Features • QML Certification High Capacity • Ceramic Devices Available to DSCC SMD • • • • • Ease of Integration Single Chip ASIC Alternative 2,000 to 36,000 Available Logic Gates Up to 2.5 Kbits Configurable Dual-Port SRAM

Contextual Info: M MOTOROLA M ilitary 54LS30 Single 8-Input Positive NAND Gate MPO Himi ELECTRICALLY TESTED PER: MIL-M-38510/30009 AVAILABLE AS: 1) JAN: JM38510/30009BXA 2) SMD: N/A 3)883: 54LS30/BXAJC LOGIC DIAGRAM X = CASE OUTLINE AS FOLLOWS: PACKAGE: CERDIP: C CERFLAT: D

Contextual Info: STRH40N6SY1 STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N6SY1 60 V STRH40N6SY3 60 V 2 1 • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

A42MX16

Abstract: ACTEL A42MX09 40MX 42MX A40MX02 A40MX04 A42MX09 A42MX24 A42MX36 CQ256
Contextual Info: v 4 . 0. 1 40MX and 42MX FPGA Families Features • QML Certification High Capacity • Ceramic Devices Available to DSCC SMD • • • • • Ease of Integration Single Chip ASIC Alternative 2,000 to 36,000 Available Logic Gates Up to 2.5 Kbits Configurable Dual-Port SRAM