SMD SINGLE GATE Search Results

5962F0251101VXC

Abstract: ld smd transistor MKT .1K IS-1825ASRH ISL71823ASRH ISL71823ASRHQD ISL71823ASRHQF IS0-1825ASRH-Q 5962F0251101QXC d16 smd
Contextual Info: IS-1825ASRH, ISL71823ASRH Data Sheet September 25, 2008 Single Event and Total Dose Hardened, High-Speed, Dual Output PWMs FN9065.3 Features • Electrically Screened to DSCC SMD # 5962-02511 The single event and total dose hardened IS-1825ASRH and ISL71823ASRH pulse width modulators are designed to be

smd DIODE code marking 20A

Abstract: smd code diode 20a STRH40N6SY1 STRH40N6SY3
Contextual Info: STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40N6SY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

CDFP2-F10

Abstract: GDFP1-F10 smd transistor marking f10 smd marking LD intersil PART MARKING 5962F0721501VXC SMD 5962-07215 "window detector" k10a smd diode K10
Contextual Info: ISL7119RH Data Sheet October 8, 2008 Radiation Hardened High Speed Dual Voltage Comparator FN6607.2 Features • Electrically Screened to DSCC SMD # 5962-07215 The ISL7119RH is a radiation hardened high speed dual voltage comparator fabricated on a single monolithic chip. It

Contextual Info: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: Product specification PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: SMD Type Product specification KDB3682 FDB3682 TO-263 Features (Typ.), VGS = 10V, ID =32A +0.1 1.27-0.1 rDS(ON) =32m Qg(tot) = 18.5nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

Contextual Info: Product specification PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SMD Type Product specification KDB3652 FDB3652 TO-263 Features (Typ.), VGS = 10V, ID = 61A +0.1 1.27-0.1 rDS(ON) = 14m Qg(tot) = 41nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

Contextual Info: Transistors MOSFET IC SMD SMDType Type Product specification 2SK1483 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Can be driven directly an IC operating with a 5V single power supply. 1 RDS on =0.8 MAX. At VGS=4V,ID=0.5A 3 2 +0.1

Contextual Info: 83B BSS84AKMB SO T8 50 V, single P-channel Trench MOSFET Rev. 1 — 6 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: SN55LVDS32-SP www.ti.com SLLSEB4 – MARCH 2012 HIGH-SPEED DIFFERENTIAL LINE RECEIVER Check for Samples: SN55LVDS32-SP FEATURES 1 • • • • • • • • • • QML-V Qualified, SMD 5962-97621 Operate From a Single 3.3-V Supply Designed for Signaling Rates of up to 100

Contextual Info: SN55LVDS32-SP www.ti.com SLLSEB4 – MARCH 2012 HIGH-SPEED DIFFERENTIAL LINE RECEIVER Check for Samples: SN55LVDS32-SP FEATURES 1 • • • • • • • • • • QML-V Qualified, SMD 5962-97621 Operate From a Single 3.3-V Supply Designed for Signaling Rates of up to 100

IRL640S

Abstract: SMD-220 S10 SMD MARKING
Contextual Info: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition

smd diode 44a

Abstract: smd 44A
Contextual Info: SMD Type Product specification KDB3672 FDB3672 TO-263 Features (Typ.), VGS = 10V, ID =44A +0.1 1.27-0.1 rDS(ON) =24m Qg(tot) = 24nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

Contextual Info: IC IC MOSFET MOSFET SMDType Type SMD Product specification KDV303N SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● 0.68 A, 25 V. RDS ON = 0.45 Ω @ VGS = 4.5 V 1 operation in 3V circuits. VGS(th) < 1.5V. 0.55 ● Very low level gate drive requirements allowing direct

CM 6631

Abstract: 6651 Optocoupler Agilent 8102801EX 8102802PX smd code HF transistor 6N134 6N137 HCPL-2601 HCPL-268K HCPL-560X
Contextual Info: Hermetically Sealed, High Speed, High CMR, Logic Gate Optocouplers Technical Data 6N134* 81028 HCPL-563X HCPL-663X HCPL-565X 5962-98001 HCPL-268K HCPL-665X 5962-90855 HCPL-560X *See matrix for available extensions. Features • Dual Marked with Device Part Number and DSCC

avago marking style

Abstract: 8 pin SMD line transformer ALL SMD CODe Class 130(B) transformer computer power supply schematic circuit diagram gold detectors circuit HCPL-543X Optocoupler 16 Pin quad P 6431 SMD CODE list
Contextual Info: Hermetically Sealed, Very High Speed, Logic Gate Optocouplers Data Sheet HCPL-540X,* 5962-89570, HCPL-543X, HCPL-643X, 5962-89571 *See matrix for available extensions. Description Features These units are single and dual channel, hermetically sealed optocouplers. The products are capable of

32,768 SMD crystal Component

Abstract: Broadcom WLAN Saronix xtal Oscillator TI wifi 50mhz crystal oscillator oscillator 50mhz smd 802.11b broadcom Ethernet-MAC ic WIFI chip wifi 2.4 ghz
Contextual Info: #70 Clock Solutions for WiFi IEEE 802.11 By Brandon Ogilvie Introduction As the number of mobile computing and small-office homeoffice (SOHO) networks with broadband data service continues to increase, the requirement to provide high-bandwidth yet hassle-free connections between the broadband gateway and the

Contextual Info: 1 6 1 HEWLETT m LM M PACKARD Hermetically Sealed, Low If , Wide Vcc> Logic Gate Optocouplers HCPL-520X* 5962-88768 HCPL-523X HCPL-623X HCPL-625X 5962-88769 Technical Data *See matrix for available extensions. Features • Dual Marked w ith Device Part Number and DESC

a2232

Abstract: smd 1C PF202 A-2232
Contextual Info: IC IC SMD Type 30V P-Channel PowerTrench MOSFET KDS6685 Features -8.8 A, -30 V. RDS ON = 20m RDS(ON) = 35m @ VGS = -10 V @ VGS =-4.5V Low gate charge(17 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability

78 DIODE SMD

Abstract: smd transistor 26
Contextual Info: Transistors IC SMD Type 60V Complementary PowerTrench MOSFET KDS8333C Features N-Channel 4.1 A, 30 V RDS ON = 80m RDS(ON) = 130m @ VGS = 10 V @ VGS =4.5V P-Channel -3.4 A, 30 V RDS(ON) = 130 m RDS(ON) = 200 m @ VGS =- 10 V @ VGS =-4.5V Low gate charge High performance trench technology for extremely low RDS(ON).

smd 1C

Abstract: smd 6nc 78 DIODE SMD 1baa
Contextual Info: IC IC SMD Type Dual 30V P-Channel PowerTrench MOSFET KDS4953 Features -5 A, -30 V. RDS ON = 55m @ VGS = -10V RDS(ON) = 95m @ VGS =-4.5V Low gate charge(6nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability

Contextual Info: Transistors IC SMD Type Product specification 2SK3640 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 +0.1 0.80-0.1 Low Ciss: Ciss = 570 pF TYP.