SMD SINGLE GATE Search Results

Contextual Info: PRODUCT DETAIL Part Num: IXUV170N075S Description: POWER DEVICES > DISCRETE MOSFETs > N-Channel: Trench-Gate Power MOSFETs > 75V 1st Generation Trench Gate Power MOSFETs Configuration: Single Package Style: PLUS-220 SMD Status: Active Part Parameter IXUV170N075S

5962F0251101VXC

Abstract: ld smd transistor MKT .1K IS-1825ASRH ISL71823ASRH ISL71823ASRHQD ISL71823ASRHQF IS0-1825ASRH-Q 5962F0251101QXC d16 smd
Contextual Info: IS-1825ASRH, ISL71823ASRH Data Sheet September 25, 2008 Single Event and Total Dose Hardened, High-Speed, Dual Output PWMs FN9065.3 Features • Electrically Screened to DSCC SMD # 5962-02511 The single event and total dose hardened IS-1825ASRH and ISL71823ASRH pulse width modulators are designed to be

IS-1825ASRH

Abstract: 5962F0251101QEC 5962F0251101QXC 5962F0251101VEC IS1-1825ASRH-8 IS9-1825ASRH-8 IS9-1825ASRH-Q
Contextual Info: IS-1825ASRH Data Sheet June 14, 2005 Single Event and Total Dose Hardened, High-Speed, Dual Output PWM FN9065.1 Features • Electrically Screened to DSCC SMD # 5962-02511 The single event and total dose hardened IS-1825ASRH pulse width modulator is designed to be used in high

scr tag 12

Abstract: D15C WD1050 bit-slice
Contextual Info: WESTERN O R P O R A T I O N WD1050 SMD C D IG IT A L WD1050 SMD Controller/Formatter FEATURES • 16 BIT HOST INTERFACE 9.677 MBITS/SEC DATA RATE SINGLE/MULTIPLE SECTOR TRANSFERS FIXED SECTOR FROMAT TTL COMPATIBLE INPUT/OUTPUT 68 PIN JEDEC TYPE C CHIP CARRIER PACKAGE

smd DIODE code marking 20A

Abstract: smd code diode 20a STRH40N6SY1 STRH40N6SY3
Contextual Info: STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40N6SY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

st smd diode marking code

Abstract: STRH13N20SY1 STRH13N20SY3 STRH30N20SY3
Contextual Info: STRH13N20SY3 N-channel 200V - 0.18Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH13N20SY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

A42MX16 datasheet

Abstract: 240 pin rqfp drawing Actel A40MX04 SMD TRANSISTOR w18 A42MX36 smd diode wd v3 5252 F 1009 "integrated circuit" transistor smd w16 a42mx A42MX09
Contextual Info: v 3. 0 40MX and 42MX Families FPGAs Features • QML Certification High Capacity • Ceramic Devices Available to DSCC SMD • • • • • Ease of Integration Single Chip ASIC Alternative 2,000 to 36,000 Available Logic Gates Up to 2.5 Kbits Configurable Dual-Port SRAM

military mcm 1553

Abstract: Defense Electronics Supply Center NGCP3580 qml-38534 6 pin TRANSISTOR SMD CODE PA NORTHROP GRUMMAN SYSTEMS CORPORATION smd TRANSISTOR NY Northrop Grumman Electronic Systems
Contextual Info: March 15, 2010 Radiation Performance Data Package MUX8530-S MUX8530-S DSCC SMD Part Number: 5962-0923001KXC 16 channel analog multiplexer, high impedance analog input, single output with ESD protection Prepared by: Aeroflex Plainview, Inc. 35 South Service Road

block diagram of intel 8253 chip

Abstract: 8253 programmable interval timer 8253 programmable timer intel 8253 Block Diagram of 8253 8253 intel programmable interval timer 8253 8253 amd AM9513A AM9513
Contextual Info: 8253 8253 Programmable Interval Timer ¡APX86 Family MILITARY INFORMATION DISTINCTIVE CHARACTERISTICS • • • • SMD/DESC qualified Both Binary and BCD counting Single +5-V supply Three independent 16-bit counters • DC to 5 MHz • Programmable counter

CDFP2-F10

Abstract: GDFP1-F10 smd transistor marking f10 smd marking LD intersil PART MARKING 5962F0721501VXC SMD 5962-07215 "window detector" k10a smd diode K10
Contextual Info: ISL7119RH Data Sheet October 8, 2008 Radiation Hardened High Speed Dual Voltage Comparator FN6607.2 Features • Electrically Screened to DSCC SMD # 5962-07215 The ISL7119RH is a radiation hardened high speed dual voltage comparator fabricated on a single monolithic chip. It

marking code 1s

Contextual Info: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

TRANSISTOR SMD MARKING CODE QR

Abstract: 2PMV65XP
Contextual Info: PMV65XP 20 V, single P-channel Trench MOSFET 21 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

NX7002AK

Abstract: smd code marking sot23 SMD MARKING QG 6 PIN
Contextual Info: NX7002AK 60 V, single N-channel Trench MOSFET 10 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

PMPB27EP

Abstract: MARKING CODE 1V TRANSISTOR SMD MARKING CODE 1v max10029
Contextual Info: PMPB27EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

marking code 1L

Abstract: TRANSISTOR SMD MARKING CODE 1l
Contextual Info: PMPB16XN 30 V, single N-channel Trench MOSFET 20 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

marking code 1f

Abstract: NXP SMD mosfet MARKING CODE
Contextual Info: PMPB12UN 20 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

NX3020NAK

Contextual Info: NX3020NAK 30 V, single N-channel Trench MOSFET 2 October 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

TRANSISTOR SMD MARKING CODE 1P

Abstract: smd transistor marking 1p smd TRANSISTOR code marking 1P
Contextual Info: PMPB33XN 30 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

MOSFET TRANSISTOR SMD MARKING CODE A1

Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11
Contextual Info: PMPB20UN 20 V, single N-channel Trench MOSFET 12 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: PMPB48EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

marking code A09 SMD Transistor

Contextual Info: PBSS5440D 40 V PNP low VCEsat BISS transistor Rev. 02 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package.

Contextual Info: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using