SMD P 112 Search Results

p110 smd

Contextual Info: Product Group Chart Organic Conductive Polymer Capacitors OP-CAP SMD Aluminum Electrolytic Capacitors Screw Terminal P. 164 2011 Version 1 P. 167 Snap-in Terminal P. 141 P. 154 , P. 149 Radial Type P. 84 P.114 P.112 P.110 Radial- 7mmL and 5mmL P. 129 P. 128

SMD4532VP

Contextual Info: WIRE WOUND SMD CHIP INDUCTORS SMD 4532V / 5650V TYPE Shape and Size : Dimensions are in mm Features : Ordering information : ．Wire wound SMD inductors . SMD 4532 V P - 100 K ．Highly accurate dimensions and reliable . (1) ．SMD4532VP / SMD5650V are low Rdc, higher current

SMD4532VP

Contextual Info: WIRE WOUND SMD CHIP INDUCTORS SMD 4532V / 5650V TYPE Shape and Size : Dimensions are in mm Features : Ordering information : ．Wire wound SMD inductors . SMD 4532 V P - 100 K ．Highly accurate dimensions and reliable . (1) ．SMD4532VP / SMD5650V are low Rdc, higher current

pmb 4220

Abstract: Siemens pmb 4220 PMB 27251 4310 SMD IC 2197-T 82526-N smd 2035 DSP/pmb 4220 PMB27201 SICOFI PEF 2465
Contextual Info: Summary of Types in Alphanumerical Order Type Short Title Function Page PEB 2025-N IEPC ISDN Exchange Power Controller SMD 121 PEB 2025-P IEPC ISDN Exchange Power Controller 121 PEB 2026T-P IHPC ISDN High Voltage Power Controller (SMD) 106 PEB 2026T-S IHPC

ED-112YGU

Abstract: ED-112-YGU ED 260
Contextual Info: ED-112YGU GaP/GaP LED Chips Greenish-Yellow Features : Typical Applications : • GaP epi wafer • Lamp • SMD • Back Light Outline Dimensions : Unit: um 285 270 p-Electrode p-GaP epi layer n-GaP epi layer 285 p-Electrode 130 255 n-GaP substrate Emission area

Contextual Info: B ADVANCED Super Low Profile LCC SMD Socket . INTERCONNECTIONS 5 Energy Way, P.0. Box 1019, West Warwick, Rl 02893 USA Tel. 800-424-9850/401-823-5200 Fax 401-823-8723 • Email advintcorp@aol.com •Internet http://www.advintcorp.com Super Low Profile .112" 2.85mm above board LCC 32-pin SMD Sockets

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

Contextual Info: P h ilips Sem iconductors Product specification High-speed diode BAS55 FEATURES DESCRIPTION • Small plastic SMD package The BAS55 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23

MIL-STD-202 METHOD 213 CONDITION C

Contextual Info: L2 SMD Precision Devices Inc. 1-800 -274-XTAL I N F O @ P D I X T A L . C O M LOW PROFILE SURFACE MOUNT QUARTZ CRYSTAL The L2 SMD series provides a broad range of frequencies, and a low profile height, packaged in a robust, high reliability enclosure. The L2 SMD has

12MHz smd

Contextual Info: Bothhandusa.com 10 BASE-T ETHERNET SMD FILTER APPLY TO GENERIC IC P/N: FS2022D DATA SHEET Feature ! ! ! ! ! Designed for 10 BASE-T application. Fully compatible with IEEE 802.3 standard. 16-PIN SMD low profile package. Operating temperature range: 0℃ to +70℃.

Contextual Info: N AMER P H ILIP S /D IS C R E T E b'lE T> • bbSB'iai D0Sfl7ST B7T » A P X rm n p o rro u u m s p w m w u u n BLT81 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures

12MHz smd

Abstract: SMD a6 FS2022
Contextual Info: Bothhand USA. e-mail: sales@bothhandusa.com http://www.bothhandusa.com 10 BASE-T ETHERNET SMD FILTER Page : 1/1 P/N:FS2022:APPLY TO GENERIC IC Feature z z z z z Designed for 10 BASE-T application. Fully compatible with IEEE 802.3 standard. 16-PIN SMD low profile package.

sepc capacitors

Contextual Info: 2 Series System Diagram Aluminum Solid Capacitors with Conductive Polymer Aluminum Solid Capacitors with Organic Semiconductive Electrolyte 1. System Diagram SMD type Aluminum solid capacitors with Conductive polymer P.104-105 P.106-107 SVPB SVPA SVPC Low profile

FS2022 lf

Abstract: 12MHz smd FS2022
Contextual Info: Bothhandusa.com 10 BASE-T ETHERNET SMD FILTER APPLY TO GENERIC IC P/N:FS2022 LF DATA SHEET Feature Designed for 10 BASE-T application. Fully compatible with IEEE 802.3 standard. 16-PIN SMD low profile package. Lead free for external pins. Operating temperature range: 0℃ to +70℃.

oscillator 50mhz smd 7x5

Abstract: 10MHz oscillator CXO crystal oscillator 50M 1.8V oscillator 11.0592 mhz smd
Contextual Info: OSCILLATORS 7 x 5 mm SMD SEAM SEALED CXO TYPE / 6 N SERIES • Features - ■ Small SMD type clock crystal oscillator units. High precision characteristic covering u p to w idefrequency range. Designed for automatic mounting and reflow soldering. Optionable stand-by function for output: Tri-state output.

FS2022

Abstract: 12MHz smd
Contextual Info: 10 BASE-T ETHERNET SMD FILTER P/N:FS2022:APPLY TO GENERIC IC A. GENERAL SPECIFICATIONS: 1. DESIGNED FOR 10 BASE-T APPLICATION. 2. FULLY COMTATIBLE WITH IEEE 802.3 STANDARD. 3. 16-PIN SMD LOW PROFILE PACKAGE . 4. OPERATION TEMP: 0°C TO 70°C. 5. STORAGE TEMP RANG: -25°C TO +125°C.

Contextual Info: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic

Contextual Info: L3 Precision Devices Inc. 1-800 -274-XTAL I N F O @ P D I X T A L . C O M LOW PROFILE SURFACE MOUNT QUARTZ CRYSTAL The L3 SMD series provides a broad range of frequencies, and a low profile height, packaged in a robust, high reliability enclosure. The L3 SMD has

Contextual Info: Specification for a Monolithic SMD Crystal Filter MtronPTI P/N: XF9343R I. General & Electrical Requirements: 1. Center Frequency FON : 112.0MHz 2. Passband: @ 1dB:  FON 5.0kHz minimum @ 3dB:  FON 10.0kHz minimum 3. Insertion Loss (@ peak of transmission within the 3dB passband): ≤ 4.0dB

Contextual Info: Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench

SOT1118

Abstract: PMDPB70XP NXP SMD TRANSISTOR MARKING CODE s1
Contextual Info: PMDPB70XP 30 V, dual P-channel Trench MOSFET Rev. 1 — 9 March 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench

PMV32UP

Abstract: Silicon P-Channel Junction FET sot23 TRANSISTOR SMD MARKING CODES
Contextual Info: SO T2 3 PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench

PN0807

Abstract: 66a smd D66A Q67060-S6044 ANPS071E SPB100N08S2-07 SPP100N08S2-07 H14F
Contextual Info: SPP100N08S2-07 SPB100N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 6.8 mΩ • 175°C operating temperature ID 100 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated

Contextual Info: SPP100N08S2-07 SPB100N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 6.8 mΩ • 175°C operating temperature ID 100 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated