SMD MARKING S21 Search Results

transistor MAR 819

Abstract: transistor MAR 543 sl2 357 BFS17
Contextual Info: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4

"marking E1"

Abstract: BFS17 BFS17R sot 23 transistor 70.2
Contextual Info: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4

Contextual Info: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1

"marking E1"

Abstract: BFS17R BFS17 d 1556 transistor
Contextual Info: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1

BFS17

Abstract: transistor BFs 18 BFS17R marking E1
Contextual Info: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

smd marking nf

Abstract: S21E S21E-2 2SC3429 nf smd marking
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC3429 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Noise Figure 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF=1.5dB,|S21e|2=16dB f=500MHz +0.05 0.1-0.01 0-0.1 +0.1

Contextual Info: Transistors IC SMD Type Product specification 2SC3429 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Noise Figure 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF=1.5dB,|S21e|2=16dB f=500MHz +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1

Contextual Info: Transistors IC SMD Type Product specification 2SC3099 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure 1 NF=1.7dB,|S21e|2=15dB f=500MHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1

S21E

Abstract: S21E-2 2SC3099 nf smd marking
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3099 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=1.7dB,|S21e|2=15dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1

marking MA

Abstract: 2SC3011
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3011 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure: NF=2.3dB Typ. f=1GHz 1 High fT : fT=6.5GHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1

marking mh

Abstract: 2SC3606
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC3606 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz 1 0.55 Low noise figure, high gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

Contextual Info: Transistors IC SMD Type Product specification 2SC3606 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF = 1.1dB, |S21e|2 = 11dB f = 1 GHz 1 0.55 Low noise figure, high gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

Contextual Info: Transistors IC SMD Type Product specification 2SC3098 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=2.5dB,|S21e|2=14.5dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

sot-23 Marking Mb

Abstract: 2SC3098 S21E-2 Marking MB
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3098 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=2.5dB,|S21e|2=14.5dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

Contextual Info: Transistors Diodes IC SMD Type Product specification 2SA1978 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High fT fT=5.5GHz TYP . 0.4 3 Features 1 0.55 High gain |S21e|2=10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA 2 High-speed switching characterstics

transistor marking T93

Abstract: PNP 5GHz TRANSISTOR PNP 5GHz PT-200 2SA1978
Contextual Info: Transistors IC SMD Type PNP Eitaxial Silicon Transistor 2SA1978 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High fT fT=5.5GHz TYP . 0.4 3 Features 1 0.55 High gain |S21e|2=10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA 2 High-speed switching characterstics

PT-200

Abstract: 2SA1977 Marking T92 SOT marking t92 TRANSISTOR SMD 1301
Contextual Info: Transistors IC SMD Type PNP Epitaxial Silicon Transistor 2SA1977 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High gain 0.55 High fT :fT = 8.5 GHz TYP. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 | S21e |2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = -8 V, IC = -20 mA

smd transistor w1a

Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

DIODE SMD T25

Abstract: 25V DIODE SMD T25 ComChip Date code br smd marking code MARKING 1E9 Transition minimized differential signaling Diode smd marking 44 055PF DIODE 6kv
Contextual Info: SMD ESD Protection Diode SMD Diodes Specialist CSRS065V0V RoHS Device Features SOT-23-6L ESD Protect for Transition Minimized Differential 0.140 2.90 BSC. Signaling(TMDS) Channels. Protect four I/O lines and one VDD line 0.063(1.60) BSC. 0.110(2.80)BSC. IEC61000-4-2 (ESD) ±8kV(Contact) ,±15kV(Air).

Contextual Info: Formosa MS SMD Super Fast Rectifier SFM21-L THRU SFM28-L List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Super Fast Rectifier SFM21-L THRU SFM28-L List List. 1 Package outline. 2

SMD diode s26

Abstract: smd diode marking s26
Contextual Info: Formosa MS SMD Super Fast Rectifier SFM21-BS THRU SFM28-BS List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Super Fast Rectifier SFM21-BS THRU SFM28-BS List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Super Fast Rectifier SFM21-B THRU SFM28-B List List. 1 Package outline. 2