SMD MARKING CC6 Search Results
SMD MARKING CC6 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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SMD MARKING CC6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: SIEM EN S 1M x 16-Bit Dynamic RAM 1 k Refresh Fast Page Mode HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 Advanced Inform ation • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: |
OCR Scan |
16-bit5118160bsj-50/-603118160bsj-50/-60hyb5118160+2 | |
bt 33 fContextual Info: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • |
OCR Scan |
5116400bj-50/-605117400bj-50/-603116400bj/bt-50/-603117400bj-50/-60+5 | |
XTAL 32.768KHZ DT-26 6PF
Abstract: QUARTZ XTAL SMD 25MHZ FIXED EPCOS R820 SA604N XTAL 4MHz 50ppm 18pF 27MHZ NDK NX3225SA CSTCC4M00G53-R0 SAFCC433MBM0T00 10F7.5A CSTCC2M00G53-R0
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Original |
suppotb550eztb560eztb600eztb614e+16 | |
WL15
Abstract: WL3 MARKING WL3 MARKING cODE
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OCR Scan |
hyb5117800bj/bsj-50/-60hyb3117800bjhyb5117800hyb3117800+8 | |
top 256 EN
Abstract: BL4021
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OCR Scan |
16-bit314171bj-50/-60/-70314171bjl-50/-6q/-70314171bj/bj+4 | |
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Contextual Info: SIEMENS 3.3V 256 K x 16-Bit EDO-DRAM HYB 314175BJ-50/-55/-60 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh HYB 314175BJL-50/-55/-60 Preliminary Information • Low Power dissipation max. 450 mW active (-50 version) max. 432 mW active (-55 version) |
OCR Scan |
16-bit314175bj-50/-55/-60314175bjl-50/-55/-60314175bj/bjl-50/-55/-60 | |
smd code marking yc 440
Abstract: siemens rw 152
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OCR Scan |
hyb5117805bj/bsj-50/-60hyb3117805bjhyb5117805hyb3117805+8 | |
SIEMENS rwc 62
Abstract: SMD COD BOOK
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OCR Scan |
64400j/t-503164400j/t-603165400j/t-503165400j/t-6+4 | |
MD80C31BH
Abstract: 5962-8506401MQA MD80C31 MR80C31BH MD80C31B 5962-8506403MQA 5962-8506401MYA 5962-8506401MXA MR80C31 CC-416
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OCR Scan |
5962-r323-925962-r052-93md80c31bh5962-8506401mqa+8 | |
isl 6251 schematic
Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
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Original |
q62702-a772q62702-a731q62702-a773ot-23+10 | |
siemens hyb514171BJContextual Info: SIEMENS 256K X 16-Bit Dynamic RAM HYB 514171BJ-50/-60/-70 Low Power 256K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-50/-60/-70 Advanced Information 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time |
OCR Scan |
16-bit514171bj-50/-60/-70514171bjl-50/-60/-70hyb514171bj/bjl-50/-60/-70+4 | |
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Contextual Info: M ICRON SEM ICONDUCTOR INC b3E D M IC R O N WÊ b lllS M T 1 MEG X 0 G D 7 cì b G b O 1» « P I R N MT3D19 9 DRAM MODULE 1 MEG X 9 DRAM DRAM MODULE FAST-PAGE-MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES • Industry-standard pinout in a 30-pin single-in-line |
OCR Scan |
mt3d1930-pin625mw024-cycle+1 | |
SMD CODE KACContextual Info: SIEMENS 1M x 4-Bit Dynamic RAM HYB 314400BJ/BJL-50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 "C operating temperature • Fast Page Mode Operation • Performance: -50 -60 -70 Jrac RAS access time 50 60 70 ns fCAC CAS access time |
OCR Scan |
314400bj/bjl-50/-60/-70p-soj-26/20-5smd code kac | |
5118160BSJContextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 1k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 'C operating temperature • Performance: -50 -60 -70 fRAC RAS access time 50 60 70 ^CAC CAS access time 13 15 |
OCR Scan |
16-bit5118160bsj-50/-60/-7016-dram5118160bsj | |
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Wo18Contextual Info: SIEMENS 1 M x 4-Bit Dynamic RAM Low Power 1 M x 4-Bit Dynamic RAM HYB 514400BJ/BJL -50/-60/-70 A d va n c ed Info rm ation • 1 048 576 words by 4-bit organization • 0 to 70 'C operating temperature • Fast Page Mode Operation • Performance: -50 -60 |
OCR Scan |
514400bj/bjlp-soj-26/20-5i-5-10wo18 | |
5962-9166210mxa
Abstract: QML-38535 SMD MARKING CODE A1R idt7024l20gb O15R IDT7024L35FB MARKING CODE SMD IC AOL
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OCR Scan |
idt7024l20gb5962-9166212myaidt7024l20fb5962-9166210mxa+5 | |
MARKING Dt3
Abstract: smd transistor marking a7h philips dl 701 PAL 007 A ORG smd transistor marking 11H AGP 9805 74 HTC 00 smd
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Original |
saa7113hmarking dt3smd transistor marking a7hphilips dl 701+4 | |
MT4C1024-8
Abstract: smd FAA smd marking S5B marking mpde G5705 Marking 62315 C19B MT4C1024
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OCR Scan |
mt4c1024m38510/249mil-std-88318-pin+9 | |
SMD MARKING CODE 2MContextual Info: SIEMENS 2M x 8-Bit Dynamic RAM 2k-Refresh Hyper Page Mode- EDO HYB 5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC RAS access time 50 60 70 ns ^CAC |
OCR Scan |
5117805bsj5117805bsj-5q/-60/-705117805bsj-50/-60/-7086maxl+2 | |
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Contextual Info: SIEMENS 1M x 4-Bit Dynamic RAM Hyper Page Mode (EDO version) HYB 314405BJ/BJL-50/-60/-70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 ’C operating temperature • Hyper Page Mode - EDO • Performance: ^RAC RAS access time |
OCR Scan |
314405bj/bjl-50/-60/-70p-soj-26/20-585max | |
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Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: ^RAC RAS access time -50 -60 -70 50 60 70 ns ns fcAC CAS access time 13 15 20 ^AA |
OCR Scan |
5117400bj5117400bj-50/-60/-70p-soj-26/2485max+1 | |
SMJ55161-80GBM
Abstract: SMJ55161-75HKCM SQ1D 5962-94549 QML-38535 sq10 amplifier smd 5Gs 5962-9454901MXA 5962-9454903QYC SMJ55161-70HKCM
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OCR Scan |
5962-r167-965962-r126-97r00470smj55161-80gbm+9 | |
SMD MARKING CODE RACContextual Info: SIEMENS 1M x 4-Bit Dynamic RAM Hyper Page Mode (EDO version) HYB 514405BJ/BJL-50/-60/-70 Preliminary Information • 1 048 576 words by 4-bit organization • 0 to 70 "C operating temperature • Hyper Page Mode - EDO • Performance: -50 -60 -70 fRAC RAS access time |
OCR Scan |
514405bj/bjl-50/-60/-70p-soj-26/20-5181b1smd marking code rac | |
2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
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Original |
zmm22zmm24zmm27zmm43+11 | |