SMD MARKING 4D Search Results

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F

qml-38535

Abstract: smd marking 1331
Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA Add appendix A for die devices 03, 04, 05. - tmh 00-07-03 APPROVED Monica L. Poelking REV A A A A A A A A A A A A A A A A A A A SHEET 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 A A A A A A A A A A A

RCA03-4D

Abstract: SMD resistors codes FCR05 FCR06 FCR 06 smd jumper marking code G RCN06-10R smd code marking resistor RCA03 eia0603
Contextual Info: TOKEN FCR, RCA, RCN Chip Resistors Surface Mount Chip Resistors Token has introduced precision surface-mount resistor networks, chip array, and flip-chips. Preview Token has introduced precision surface-mount resistor networks, chip array, and flip-chips. Those no-lead packages are optimized

SOT-323

Contextual Info: Formosa MS BAS70W / BAS70W-04 / BAS70W-05 / BAS70W-06 SMD Small Signal Schottky Diode List List. 1 Package outline. 2

5962-E028-04

Abstract: qml-38535 00B03 Defense Supply Center Columbus G227 marking code LA SMD smd marking 1331 smd marking NE transistor smd marking NE MB02
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add appendix A for die devices 03, 04, 05. - tmh 00-07-03 Monica L. Poelking B Add case outline 8. Update boileplate. - phn 02-02-12 Thomas M. Hess C Add footnote in 1.2.2. Add RHA features in 1.6 and RHA requirements

k75 1038

Abstract: 100OHM 125OC BAS70W BAS70W-04 BAS70W-05
Contextual Info: Formosa MS SMD Schottky Barrier Diode BAS70W / 04 / 05 / 06 List List. 1 Package outline. 2

Contextual Info: Diodes SMD Type General Purpose PIN Diode MMBV3401 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 0.34Ω Typ @ IF = 10 mAdc 1 0.55 ● Very Low Series Resistance at 100 MHz +0.1 1.3-0.1 +0.1 2.4-0.1 ● Low Capacitance ? 0.7 pF (Typ) at V R = 20 Vdc

A22 SMD MARKING CODE

Abstract: SMD MARKING CODE 1D6 SMD MARKING CODE 1D7 SMD MARKING CODE 2d1 A30 MARKING CODE 2D4 SMD marking a26 smd marking A26 smd marking code b6 SMD marking code B10
Contextual Info: 74LVC16374A; 74LVCH16374A 16-bit edge-triggered D-type flip-flop with 5 V tolerant inputs/outputs; 3-state Rev. 06 — 12 February 2009 Product data sheet 1. General description The 74LVC16374A and 74LVCH16374A are 16-bit edge-triggered flip-flops featuring

Contextual Info: Transistors IC SMD Type BC859W,BC860W Features Low current max. 100 mA . Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC859W BC860W Unit Collector-base voltage Parameter VCBO -30 -50 V Collector-emitter voltage

4d SMD Transistor

Abstract: 4F smd transistor MARKING SMD 4G smd TRANSISTOR marking 4D SMD TRANSISTOR 4d smd transistor 4b SMD TRANSISTOR MARKING 4c transistor SMD 4h NF marking TRANSISTOR SMD MARKING SMD PNP TRANSISTOR
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor BC859W,BC860W Features Low current max. 100 mA . Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC859W BC860W Unit Collector-base voltage Parameter VCBO

SAWES835MCM0F00

Abstract: smd diode marking 325 powermeter 800 SAWES SMD c015 murata SAW
Contextual Info: SAW FILTER FOR W-CDMA Dual Tx Murata part number : SAWES835MCM0F00 (fc=835MHz) Feature 1. Dual type 2. Ultra Small SMD package (2.5x2.0mm package) 3. Balance type (50Ω//200Ω) Test Circuit 200Ω S.S.G. 9 8 7 6 68nH Package Dimensions 50Ω 10 1 2 3 4

SAWES942MCQ0F00

Abstract: SAWES murata SAW
Contextual Info: SAW FILTER FOR GSM900/GSM1800 Rx Murata part number : SAWES942MCQ0F00 (fc=942.5MHz) Feature 1. Small SMD package (2.5x2.0mm package) 2. Dual type 3. Balance type (50Ω//150Ω) 4. Low Insertion Loss (2.7 dB max.) Test Circuit 50Ω 4 3 2 1 S.S.G. 5 6 7

SMD c015

Abstract: MURATA SAW 5970 SAWES 21DB5
Contextual Info: SAW FILTER FOR GSM1800/GSM1900 Rx Murata part number : SAWES1G84CQ0F00 (fc=1842.5MHz) Feature 1. Dual type 2. Small SMD package (2.5x2.0mm package) 3. Low Insertion Loss (2.5 dB max.) 4. Balance type (50Ω//150Ω) Test Circuit 50Ω 4 3 2 1 S.S.G. 5 6

3P03L04

Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
Contextual Info: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V

5962-8859701XA

Abstract: 5962-88597 5962-8859702XA QML38535 part marking MICROCIRCUIT 4d smd diode
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Drawing updated to reflect current requirements. -ro 01-12-11 R. MONNIN B Update drawing as part of 5 year review. -rrp 07-12-03 R. HEBER THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. REV SHEET

qml38535

Abstract: 5962-8982402PA 5962-89824
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with N.O.R. 5962-R140-95 95-06-13 M. A. FRYE B Drawing updated to reflect current requirements. -ro 01-03-30 R. MONNIN C Update drawing as part of 5 year review. -rrp 07-06-12 ROBERT M. HEBER

5962-88597

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Drawing updated to reflect current requirements. -ro 01-12-11 R. MONNIN B Update drawing as part of 5 year review. -rrp 07-12-03 R. HEBER C Update drawing to current MIL-PRF-38535 requirements. –rrp 13-02-05

5962-03B01

Abstract: SMD 5 PIN phu qml-38535 MB02 MG2044P MG2142P MG2270P
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A The device type on this drawing have been changed to reflect the part numbers on SMD 5962-00B03. New device types 01 and 02 have been added to 1.2.2. - phn 03-12-04 Thomas M. Hess REV SHEET REV SHEET REV STATUS

smd marking QM

Abstract: is2981rh a35 smd diode QML-38535 a41 smd diode qml38535 a42 smd type diode 1331 SMD 5962R0052001VVC CDIP2-T18
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Make changes to IOUT, IF, VIN as specified in paragraph 1.4, table IIA, PRR as specified in figure 3, and paragraph 4.1. - ro 00-08-01 R. MONNIN B Drawing updated to reflect current requirements. - gt 02-04-30

5962F0252401QXC

Abstract: 5962F0252401QXA
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Change to footnote 5/ in 1.3. Added footnote 4/ to KVI test in table I. Made correction to figure 3. -rrp 03-02-19 R. Monnin B Add 3.1.1 and die appendix A. -rrp 05-01-27 R. Monnin C Add low dose rate radiation note to 1.5. -rrp

qml-38535

Abstract: GDFP1-F14 TLC2252 TLC2252A TLC2254 TLC2254A FKB* MARKING
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device class N and plastic small outlines X and Y. Make changes to 1.2.3,1.2.4,1.3, table I, figure 1, figure 2, and table II. 95-07-20 M. A. FRYE B Add device types 03 and 04. Technical and editoral changes

3N0625

Abstract: INFINEON PART MARKING 252 SMD marking code 1696 ANPS071E IPI25N06S3-25 IPP25N06S3-25 IPB25N06S3-25 INFINEON smd PART MARKING smd diode code marking 33A TO220 package infineon
Contextual Info: Target data sheet OptiMOS -T Power-Transistor Product Summary VDS Feature • n-Channel 55 RDS on max. SMD version • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) IPI25N06S3-25 IPP25N06S3-25,IPB25N06S3-25 P- TO262 -3-1 V 24.9

3N0607

Abstract: ANPS071E IPB80N06S3-07 IPI80N06S3-07 IPP80N06S3-07 DIODE 7387 smd diode code 102a c4 09 smd marking code
Contextual Info: Target data sheet OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • AEC Q101 qualified • Low On-Resistance RDS on IPI80N06S3-07 IPP80N06S3-07,IPB80N06S3-07 Product Summary VDS 55 V RDS(on) max. SMD version 6.5 mΩ ID 80 A P- TO262 -3-1

3PN0603

Abstract: INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03
Contextual Info: Target data sheet IPI100N06S3-03 IPP100N06S3-03,IPB100N06S3-03 OptiMOS-T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) max. SMD version P- TO262 -3-1 55 V