SMD IC TS Search Results

7SMD

Contextual Info: ASSMANN IC-SMD-Fassungen IC-SMT-sockets Electronic C o m p o n e n ts IC-SMD-Fassungen IC-SMT-sockets IC -S M D -Fassungen mit vergoldeten Präzisions-Federkontakten IC -S M D -Fassungen Low-cost IC -SM T-sockets with gold plated precision spring contacts

KTHC5513

Contextual Info: IC IC SMD Type Power MOSFET KTHC5513 Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Featuring Complementary Pair Low RDS on in a ChipFET Package for High Efficiency Performance Low Profile ( 1.10 mm) Allows Placement in Extremely Thin

P Channel Low Gate Charge

Abstract: KTHD3100C
Contextual Info: IC IC SMD Type Power MOSFET KTHD3100C Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Provides Great Thermal Characteristics Trench P-Channel for Low On Resistance Low Gate Charge N-Channel for Test Switching Absolute Maximum Ratings Ta = 25

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5053 Features Low saturation voltage, typically VCE sat = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40x40×0.7mm ceramic board). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

smd transistor 26

Abstract: KTS2005
Contextual Info: IC IC SMD Type Liquid Crystal Display Backlight Drive Applications KTS2005 TSSOP-8 Unit: mm Features Low ON resistance. Ultrahigh-speed switching. Mounting height 1.1mm. 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Symbol Rating Unit

KTD2005

Contextual Info: IC IC SMD Type Ultrahigh-Speed Switching Applications KTD2005 TSSOP-8 Unit: mm Features Low ON resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2

ic MARKING QG

Abstract: SMD IC MARKING NC smd diode marking 79 KTS1012 PF380 SMD 6_A
Contextual Info: IC IC SMD Type Load Switching Applications KTS1012 TSSOP-8 Unit: mm Features Low ON resistance. 4.0V drive. Mount height 1.1mm. 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-to-Source Voltage VDSS -30 V

337 SMD

Abstract: KRF7703 mosfet 337
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7703 TSSOP-8 Unit: mm Features Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile 1.2mm 1,5,8: Drain Available in Tape & Reel 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter

smd ic marking PC

Abstract: SMD MARKING 2SA1734
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1734 Features Low saturation voltage: VCE sat = -0.5 V (max) (IC = -700 mA). High speed switching time: tstg = 0.2ìs (typ.). Small flat package. PC = 1.0 to 2.0 W (mounted on ceramic substrate). Absolute Maximum Ratings Ta = 25

FA Series

Abstract: FA-365 FA-368
Contextual Info: Crystal unit THIN SMD HIGH-FREQUENCY CRYSTAL UNIT FA-365 • High-density mounting-type SMD. • Excellent reliability and environment capability. • Capable of covering a wide frequency range. from 14 MHz to 41 MHz • 1.4 mm thickness is equal to SMD-type IC.

sMD .v05

Abstract: smd V05 SG-615PH C SG-615P SG-615PTJ v05 smd sg-615ph SG-615 SG-615PCW
Contextual Info: Crystal oscillator SOJ HIGH-FREQUENCY CRYSTAL OSCILLATOR SG-615 series • High-density mounting-type SMD. • A general-purpose SMD with heat-resisting cylindrical AT-cut crystal unit and allowing almost the same soldering temperature as SMD IC. • Cylindrical AT crystal unit builtin, thus assuring high reliability.

722 smd transistor

Abstract: transistor smd marking 94 FMMT722 TRANSISTOR SMD 1a 9 transistor smd br
Contextual Info: Transistors IC SMD Type Switching Transistor FMMT722 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 625mW power dissipation. 1 Excellent hfe characteristics up to 10A pulsed . 0.55 IC up to 10A peak pulse current. +0.1 1.3-0.1 +0.1 2.4-0.1 IC CONT 2.5A.

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC4984 Features Large current capacity. Low collector-to-emitter saturation voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 15 V Collector-emitter voltage

Contextual Info: IC SMD Type Product specification 2SA1900 Features Low saturation voltage, typically VCE sat = ?0.15V at IC / IB = ?500mA / ?50mA PC=2W (on 40X40X0.7mm ceramic board) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter Voltage

smd transistor 718

Abstract: FMMT718 TRANSISTOR SMD 1a 9 smd transistor MARKING 2A sot23
Contextual Info: Transistors IC SMD Type Switching Transistor FMMT718 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 IC CONT 2.5A. 0.4 3 625mW power dissipation. 1 Excellent hfe characteristics up to 10A pulsed . 0.55 IC up to 10A peak pulse current.

Contextual Info: Transistors IC SMD Type Product specification 2SD1484K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 High current. IC=5A . 2 Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. +0.1 0.95-0.1

Contextual Info: Transistors IC SMD Type Product specification 2SD1005 Features World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V. Excellent dc current gain linearity: hFE=80TYP. VCE=2V, IC=500mA . Absolute Maximum Ratings Ta = 25 Parameter

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage

31224

Abstract: ISO14001 FS-555 epson CRYSTAL SMD
Contextual Info: SAW device SAW RESONATOR FS-555 Reflow solderable SMD ceramic package. Capable of covering a wide frequency range, from 200 MHz to 500 MHz. 1.5mm thickness is equal to SMD-type IC. Perfect for small wireless equipment. Actual size Specifications characteristics

Contextual Info: Transistors IC ransistor SMD Type Product specification FMMT718 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 IC CONT 2.5A. 0.4 3 625mW power dissipation. 1 0.55 IC up to 10A peak pulse current. 2 Excellent hfe characteristics up to 10A pulsed .

20V P-Channel Power MOSFET 100A

Abstract: P 037 P Channel Low Gate Charge 100A KRF7379 smd 18A
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7379 Features Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Symbol N-Channel P-Channel Unit

Contextual Info: Transistors IC SMD Type Product specification 2SC5342UF Features Large collector current : IC=500mA Low collector saturation voltage enabling low-voltage operation 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: Transistor IC Transistors IC Transistor DIP SMDType Type Type DIP SMD Type Product specification 2SB649A Features Collector-Emitter Voltage :-160V Collector Current :-1.5A 1 Emitter 2 Collector 3 Base Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

SMD TRANSISTOR MARKING 6C

Abstract: smd transistor 6B SMD TRANSISTOR MARKING 6B transistor SMD 6b 6b smd transistor MARKING SMD TRANSISTOR 6c transistor smd 6C smd transistor 6c TRANSISTOR 6B smd SMD 6b
Contextual Info: Transistors IC SMD Type General Purpose Transistor BC817W Features High current. Low voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage IC = 10 mA