SMD DIODE ORDER MARKING CODE STMICROELECTRONICS Search Results

STMicroelectronics smd marking code

Abstract: st smd diode marking code
Contextual Info: BYW81HR Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier Datasheet - production data Description Packaged in hermetic TO-254 or SMD.5, this device is intended for use in medium voltage, high frequency switching mode power supplies, high frequency DC to DC converters, and other

STMicroelectronics smd marking code

Abstract: st smd diode marking code
Contextual Info: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Datasheet - production data • High reverse avalanche surge capability • Hermetic packages • Target radiation qualification: – 150 krad Si low dose rate – 1 Mrad high dose rate

st smd diode marking code

Contextual Info: STPS1045HR Aerospace 2 x 10 A - 45 V Schottky rectifier Features • Forward current: 2 x 10 A ■ Repetitive peak voltage: 45 V ■ Low forward voltage drop: 0.75 V ■ Maximum junction temperature: 175 °C ■ Negligible switching losses ■ Low capacitance

st smd diode marking code

Abstract: STMicroelectronics smd marking code
Contextual Info: STPS1045HR Aerospace 2 x 10 A - 45 V Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. Housed in a hermetically sealed surface mount package, it is

5962F8776003VXA

Abstract: 5962F8762401VXA 5962F8762403VXC RHFAC2525K02V RHFAC14AK1
Contextual Info: 54ACxxxx, 54ACTxxxx Rad-hard advanced high-speed 5 V CMOS logic series Data brief Features • AC: 2 to 6 V operating voltage • ACT: 4.5 to 5.5 V operating voltage • High speed TPD = 4.5 ns typ. • Low DC power dissipation: 8 µA max. Flat-14 • Symmetrical 24 mA output characteristics

Contextual Info: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Features • Forward current: 1 x 20 and 2 x 20 A ■ Repetitive peak voltage: 100 V ■ Low forward voltage drop: 0.8 V ■ Maximum junction temperature: 175 °C ■ Negligible switching losses

st smd diode marking code

Abstract: STPS20100S1 smd diode B3 STMicroelectronics smd DIODE marking code STPS20100AFSYHRB 5106 smd diode code B2 smd diode order marking code stmicroelectronics STPS20100HR STPS20100SHRB
Contextual Info: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Features • Forward current: 1 x 20 and 2 x 20 A ■ Repetitive peak voltage: 100 V ■ Low forward voltage drop: 0.8 V ■ Maximum junction temperature: 175 °C ■ Negligible switching losses

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

st smd diode marking to3

Abstract: smd diode marking code TO3 mosfet SMD MARKING CODE 352 STRH40N6 STMicroelectronics smd DIODE marking code smd st diode marking to3 STRH40N6SY1 smd diode order marking code stmicroelectronics smd K 739 mosfet
Contextual Info: STRH40N6 N-channel 60 V, 0.036 Ω, SMD.5 rad-hard low gate charge STripFET Power MOSFET Preliminary data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened

Contextual Info: SPT02-236DDB Automation sensor transient and overvoltage protection Datasheet − production data Applications • Factory automation sensor application • Proximity sensor interface protection • Transient and surge voltage protection • Compliant with sensor standard, EN 60947-5-2

Contextual Info: ESDAXLC6-1BU2K Single-line bidirectional ESD protection for high speed interface Datasheet - production data Features • Bidirectional device • Extra low diode capacitance: 0.25 pF • Low leakage current • 0201 SMD package size compatible • Ultra small PCB area: 0.18 mm2

diode smd marking Z2

Abstract: diode Z2 018 SMD MARKING CODE Z2 diode marking z2 marking code z2 esdaxlc6
Contextual Info: ESDAXLC6-1BU2 Single-line bidirectional ESD protection for high speed interface Datasheet  preliminary data Features • Bidirectional device ■ Extra low diode capacitance: 0.4 pF ■ Low leakage current ■ 0201 SMD package size compatible ■ Ultra small PCB area: 0.18 mm2

Contextual Info: ESDAXLC6-1BU2 Single-line bidirectional ESD protection for high speed interface Datasheet - production data Features • Bidirectional device • Extra low diode capacitance: 0.4 pF • Low leakage current • 0201 SMD package size compatible • Ultra small PCB area: 0.18 mm2

ST0201

Abstract: st smd diode marking code b2 smd diode marking code L2 st smd diode marking code ESDALC6V1-1U2
Contextual Info: ESDALC6V1-1U2 Single-line low capacitance Transil for ESD protection Features • Breakdown voltage VBR = 6.1 V min. ■ Unidirectional device ■ Multiple ESD strike sustainability ■ Very low diode capacitance: 12 pF typ. at 0 V ■ Low leakage current

Contextual Info: SPT01-335DEE Automation sensor transient and overvoltage protection Datasheet − production data • Flexible connection for NPN low side or PNP high side sensor configuration • 6 V to 36 V supply voltage range • Stand-off voltage: 36 V • Minimum breakdown voltage VBR: 38 V

smd diode order marking code stmicroelectronics

Abstract: ST0201 J-STD-004 st smd diode marking code smd transistor marking 1B ESDALC6V1-1BU2 marking code B2 St020
Contextual Info: ESDALC6V1-1BU2 Single-line low capacitance Transil for bidirectional ESD protection Features • Breakdown voltage VBR = 6.1 V min. ■ Bidirectional device ■ Multiple ESD strike sustainability ■ Very low diode capacitance: 5 pF typ. at 0 V ■ Low leakage current

ST0201

Abstract: 024 marking bidirectional transil st smd diode marking code b2
Contextual Info: ESDAVLC8-1BU2 Single-line low capacitance Transil for bidirectional ESD protection Features • Bidirectional device ■ Multiple ESD strike sustainability ■ Very low diode capacitance: 5 pF typ. at 0 V ■ Low leakage current ■ 0201 SMD package size compatible

5962-96663

Abstract: HS-26CLV31RH HS-26CLV31 5962F9666302VXC qml-38535 26C31RH CDFP4-F16 F8859 STMicroelectronics smd DIODE marking code HS9-26CLV31-RH8
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with N.O.R. 5962-R032-97. 96-11-06 R. MONNIN B Make changes to boilerplate and add device class T device. - ro 98-12-03 R. MONNIN C Add device type 02. - ro 00-08-04 R. MONNIN D Make change to propagation delay test for device type 02 as specified under

75N3LLH6

Abstract: STD75N3LLH6 smd diode code B4 ST STD75N3L STU75N3LLH6 095B4 75n3l TO-251 footprint
Contextual Info: STD75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 Ω, 75 A, DPAK, IPAK, Short IPAK STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STD75N3LLH6 30 V < 0.0055 Ω 75 A STU75N3LLH6 30 V < 0.0059 Ω 75 A STU75N3LLH6-S 30 V

BAT30F3

Abstract: ST Low Forward Voltage Schottky Diode st smd diode marking code BAT30 smd diode code F3 smd diode order marking code stmicroelectronics
Contextual Info: BAT30F3 Small signal Schottky diode Features • Very low conduction losses ■ Negligible switching losses ■ Low capacitance diode ■ Flip-Chip 2-bump package Complies with the following standards ■ Flip-Chip 2 bumps IEC 61000-4-2 level 1 – ± 2 kV (air discharge)

Contextual Info: BAT30F3 Small signal Schottky diode Features • very low conduction losses ■ negligible switching losses ■ low capacitance diode ■ Flip Chip, 2-bump package Complies with the following standards ■ Flip Chip 2 bumps IEC 61000-4-2 level 1: – ±2kV (air discharge)

st micro electronics top marking

Abstract: WLCSP stencil design st smd diode marking code smd diode order marking code stmicroelectronics VIA Technology st micro marking
Contextual Info: ESDAXLC4-1BF3 Single line extra low capacitance TVS Features • Stand-off voltage 3 V ■ Ultra low capacitance 0.3 pF on a wide frequency spectrum, 200 to 3000 MHz ■ Unidirectional device ■ Low clamping factor VCL/VBR ■ Fast response time ■ Very thin package: 0.36 mm max