SMD DIODE MARKING CODE Y1 Search Results
SMD DIODE MARKING CODE Y1 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5446/BEA | Rochester Electronics LLC | 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA | Rochester Electronics LLC | 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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SMD DIODE MARKING CODE Y1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CZRH584C27-G
Abstract: CZRH584C10-G zener diode SMD marking code 92
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Original |
czrh584c2v4-gczrh584c51-god-523200mw+6 | |
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Contextual Info: SMD Zener Diode CZRH584C2V4-G Thru CZRH584C51-G Voltage: 2.4 to 51 Volts Power: 200 mWatts RoHS Device Features -For surface mounted applications. SOD-523 -Power Dissipation PD: 200mW . -Ideally suited for automated assembly processes. 0.051 1.30 0.043(1.10) |
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czrh584c2v4-gczrh584c51-god-523200mw+2 | |
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Contextual Info: Comchip Chip Schottky Barrier Rectifier SMD Diode Specialist CDBD8060-HF Thru. CDBD8100-HF Reverse Voltage: 60 to 100 Volts Forward Current: 8.0 Amp RoHS Device Halogen Free D2PAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. |
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cdbd8060-hfcdbd8100-hfqw-jb027sd8l60+2 | |
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Contextual Info: Comchip Chip Schottky Barrier Rectifier SMD Diode Specialist CDBD8060-G Thru. CDBD8100-G Reverse Voltage: 60 to 100 Volts Forward Current: 8.0 Amp RoHS Device TO-263/D2PAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. |
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cdbd8060-gcdbd8100-go-263/d2pak18voltage+4 | |
SMD MARKING CODE Y1Contextual Info: Comchip Chip Schottky Barrier Rectifier SMD Diode Specialist CDBD8060-G Thru. CDBD8100-G Reverse Voltage: 60 to 100 Volts Forward Current: 8.0 Amp RoHS Device TO-263/D2PAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. |
Original |
cdbd8060-gcdbd8100-go-263/d2pak18voltage+5 | |
z12 smd code sot23
Abstract: SMD MARKING code 613 sot23 smd code Z70 SMD marking Z4 SMD MARKING CODE Z2 smd code z16 Y11 smd code smd z17 z67 smd marking Z58
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m3d088bzx84bzx84-abzx84-b+16 | |
smd y6 sot-23
Abstract: Zener diode smd marking z2 sot smd diode SOT-23 marking code Y4 diode ZENER y8 sot23 SMD zener diode 202 diode zener smd z5 sot-23 Z14 SOT23-5 Y5 smd zener smd zener diode code Y5 z9 SMD ZENER DIODE
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czrt55c2v4-gthruczrt55c39-got-23-350mw+12 | |
Diode SOT-23 marking 27
Abstract: TRANSISTOR SMD MARKING CODE w6 Zener diode smd marking code 51 y Zener diode smd marking code 2A 2A transistor smd SOT-23 Zener Diode SOT-23 marking B TRANSISTOR SMD MARKING CODE y12 SMD Transistor Y12 TRANSISTOR SMD MARKING CODE 81c TRANSISTOR SMD MARKING CODE LF
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OCR Scan |
ot-23350mwcmpz5221bmot-23+13 | |
zener Z6 SOT23-6
Abstract: Y5 smd zener smd y6 sot-23 Zener diode smd marking z2 sot
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Original |
czrt55c2v4-gthruczrt55c39-got-23-350mw+6 | |
CZRT55C2V4-G
Abstract: smd y6 sot-23
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Original |
czrt55c2v4-gthruczrt55c39-got-23-350mw+4 | |
Zener Diode SOT-23
Abstract: Zener diode 81A Zener c8v c8a zener diode SMD MARKING CODE w6 smd diode code marking w6 diode ZENER C8S Zener c8f Zener diode 81e smd c8f
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OCR Scan |
ot-23350mwcmpz5221bcmpz5248b+16 | |
IRF2804 EQUIVALENT
Abstract: irf2804 SMD mosfet MARKING code TC SMD INDUCTOR Marking Code AN-994 IRF2804L IRF2804S SMD mosfet MARKING code T SL1600
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94436cirf2804irf2804sirf2804l+7 | |
IRF2804
Abstract: AN-994 IRF2804L IRF2804S SMD mosfet MARKING code TC
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Original |
94436cirf2804irf2804sirf2804l+4 | |
IRF2804Contextual Info: PD - 94436C IRF2804 IRF2804S IRF2804L AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 2.0mΩ |
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94436cirf2804irf2804sirf2804l+1 | |
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M6 SMD MARKING CODE
Abstract: SMD marking code R1D smd diode marking M4 SMA transistor SMD R1D marking R1E marking R2D smd codes marking c9 R2h DIODE smd marking m4 diode SMD MARKING CODE d6
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Original |
100pfpe97022lv142mlnm3500-2032+11 | |
smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
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Original |
od-80od123/323ot-23ot346+16 | |
MARKING SMD x9
Abstract: DS1217
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Original |
zgfm103v3b-mzgfm10330b-mmil-std-750dmethod-1038+6 | |
DIODE SMD w9
Abstract: DIODE smd Wj SOt23 Zener diode smd marking z2 sot
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Original |
bzx84c2v4bzx84c75mil-std-750dmethod-1026+7 | |
y6 smd zener
Abstract: DIODE SMD w9 zener SMD W9 sot 23 smd diode SOT-23 marking code Y4 Zener diode smd marking z2 sot smd diode SOT-23 marking code Y16 y2 smd zener smd zener diode code y9 zener SMD W9 diode zener smd z5 sot-23
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Original |
bzx84c2v4bzx84c751000hrsds-221718+10 | |
TRANSISTOR SMD MARKING CODE w6
Abstract: SMD TRANSISTOR MARKING 5H
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OCR Scan |
ot-23350mwcmpz5221bot-143+3 | |
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Contextual Info: ESD11B Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that |
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esd11biec61000-4-2esd11b/d | |
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Contextual Info: ESD11B Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that |
Original |
esd11besd11b/d | |
024 marking bidirectional diode
Abstract: smd diode marking coding
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Original |
esd11biec61000-4-2esd11b/d024 marking bidirectional diode+1 | |
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Contextual Info: ESD11N5.0ST5G Transient Voltage Suppressors Micro−Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, |
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esd11n5esd11n | |