SMD DIODE MARKING 1B Search Results

smd code marking LF sot23

Abstract: smd diode marking A3 sot23
Contextual Info: Philips Semiconductors Product specification Schottky barrier double diodes BAS40 series PINNING SOT23 (see Fig. 1a) FEATURES • Low forward voltage DESCRIPTION • Guard ring protected PIN BAS40 (see Fig. 1b) BAS40-04 (see Fig. 1c) BAS40-05 (see Fig. 1d)

Zener diode smd marking code 14

Abstract: z43 diode DIODE SMD CODE MARKING 35 Zener diode smd marking 22 zener diode marking 182 Zener diode smd marking 07 Zener diode smd marking code 39 SMD DIODE "MARKING code 14"
Contextual Info: Comchip SMD Zener Diode SMD Diode Specialist CZRA4728-G Thru CZRA4755-G Voltage: 3.3 to 43 Volts Power: 1.0 Watts RoHS Device Features DO-214AC/SMA -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Contextual Info: Formosa MS SMD Low Capacitance Integrated ESD Protection array L054BT26 List List. 1 Package outline. 2

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

diode smd marking Z2

Abstract: diode Z2 018 SMD MARKING CODE Z2 diode marking z2 marking code z2 esdaxlc6
Contextual Info: ESDAXLC6-1BU2 Single-line bidirectional ESD protection for high speed interface Datasheet  preliminary data Features • Bidirectional device ■ Extra low diode capacitance: 0.4 pF ■ Low leakage current ■ 0201 SMD package size compatible ■ Ultra small PCB area: 0.18 mm2

smd transistor w1a

Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

Contextual Info: ESDAXLC6-1BU2 Single-line bidirectional ESD protection for high speed interface Datasheet - production data Features • Bidirectional device • Extra low diode capacitance: 0.4 pF • Low leakage current • 0201 SMD package size compatible • Ultra small PCB area: 0.18 mm2

Contextual Info: SMD Zener Diode SMD Diodes Specialist CZRA4728-HF Thru. CZRA4755-HF Voltage: 3.3 to 43 Volts Power: 1.0 Watts RoHS Device Halogen Free DO-214AC/SMA Features 0.196 4.9 0.180(4.4) -Batch process design, excellent power dissipation offers better reverse leakage current and thermal

z11 smd

Contextual Info: SMD Zener Diode SMD Diodes Specialist CZRA4728-G Thru CZRA4755-G Voltage: 3.3 to 43 Volts Power: 1.0 Watts RoHS Device Features DO-214AC/SMA -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. -Glass pasisivated chip junction.

Contextual Info: ESDAXLC6-1BU2K Single-line bidirectional ESD protection for high speed interface Datasheet - production data Features • Bidirectional device • Extra low diode capacitance: 0.25 pF • Low leakage current • 0201 SMD package size compatible • Ultra small PCB area: 0.18 mm2

smd diode order marking code stmicroelectronics

Abstract: ST0201 J-STD-004 st smd diode marking code smd transistor marking 1B ESDALC6V1-1BU2 marking code B2 St020
Contextual Info: ESDALC6V1-1BU2 Single-line low capacitance Transil for bidirectional ESD protection Features • Breakdown voltage VBR = 6.1 V min. ■ Bidirectional device ■ Multiple ESD strike sustainability ■ Very low diode capacitance: 5 pF typ. at 0 V ■ Low leakage current

Contextual Info: ESDAVLC8-1BU2 Single-line low capacitance Transil , transient surge voltage suppressor TVS for bidirectional ESD protection Datasheet − production data Features • Bidirectional device ■ Withstands multiple ESD strikes ■ Very low diode capacitance: 5 pF typ. at 0 V

smd transistor marking 1B

Abstract: 1B MARKING TSSOP-8 1B SMD MARKING MOSFET TSSOP-8 P-Channel 1.8V MOSFET SMD IC MARKING NC 258P KDW258P diode smd 1b 1b smd diode
Contextual Info: IC IC SMD Type P-Channel 1.8V Specified PowerTrench MOSFET KDW258P TSSOP-8 Features Unit: mm -9 A, -12 V. RDS ON = 11m @ VGS = -4.5 V RDS(ON) = 14m @ VGS =-2.5V RDS(ON) = 20m @ VGS =-1.8V Rds ratings for use with 1.8 V logic High performance trench technology for extremely low RDS(ON)

Contextual Info: ESDALC6V1-1BU2 Single-line low capacitance Transil for bidirectional ESD protection Features • Breakdown voltage VBR = 6.1 V min. ■ Bidirectional device ■ Multiple ESD strike sustainability ■ Very low diode capacitance: 5 pF typ. at 0 V ■ Low leakage current

MARKING 1B sod523

Abstract: SOD523 footprint PMEG6002EB transistor smd code marking 420 PMEG6002TV
Contextual Info: PMEG6002EB; PMEG6002TV 0.2 A very low VF MEGA Schottky barrier rectifiers Rev. 01 — 24 November 2006 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in ultra small and flat lead

st micro electronics top marking

Abstract: WLCSP stencil design st smd diode marking code smd diode order marking code stmicroelectronics VIA Technology st micro marking
Contextual Info: ESDAXLC4-1BF3 Single line extra low capacitance TVS Features • Stand-off voltage 3 V ■ Ultra low capacitance 0.3 pF on a wide frequency spectrum, 200 to 3000 MHz ■ Unidirectional device ■ Low clamping factor VCL/VBR ■ Fast response time ■ Very thin package: 0.36 mm max

BAS70

Abstract: BAS70-04 BAS70-05 BAS70-06 BAS70-07
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 M3D071 BAS70 series Schottky barrier double diodes Product specification Supersedes data of 1996 Oct 01 1999 Jun 01 Philips Semiconductors Product specification Schottky barrier (double) diodes BAS70 series PINNING

BAS40

Abstract: BAS40-04 BAS40-05 BAS40-06 BAS40-07 marking code 47p
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 M3D071 BAS40 series Schottky barrier double diodes Product specification Supersedes data of 1997 Oct 24 1999 Apr 28 Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES BAS40 series

Contextual Info: Formosa MS SMD Super Fast Rectifier SFM21-BS THRU SFM28-BS List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Super Fast Rectifier SFM21-B THRU SFM28-B List List. 1 Package outline. 2

smd diode schottky code marking 1d sot23

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 M3D071 BAS40 series Schottky barrier double diodes Product specification Supersedes data of 1999 Apr 28 2001 Oct 10 Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES BAS40 series

G3VM-21GR1

Abstract: MARKING 358 SOP-8 diode 6pin SMT G3VM-61G1 G3VM-21GR G3VM-21LR G3VM-21LR1 G3VM-41GR5 g3vm-61e1 G3VM-41LR5
Contextual Info: SELECTION GUIDE – MOS FET Relays MOS FET G3VM PCB Mount G3VM SMT G3VM SOP Dimensions mm in Please refer to data sheets for all dimension information Please refer to data sheets for all dimension information Please refer to data sheets for all dimension information

smd zener diode code DE

Abstract: Zener diode smd marking 22 zener smd marking de Zener diode smd marking code w1 D31 SMD MARKING axial zener diodes marking code c3v6 D31 SMD CODE BZD84C51
Contextual Info: Formosa MS SMD Zener Diode BZD84 SERIES List List. 1 Package outline. 2 Features. 2

npn 2n3906

Abstract: smd transistor marking 11H smd diode marking B3
Contextual Info: NE1617A Temperature monitor for microprocessor systems Rev. 04 — 30 July 2009 Product data sheet 1. General description The NE1617A is an accurate two-channel temperature monitor. It measures the temperature of itself and the temperature of a remote sensor. The remote sensor is a