SMD DIODE JJ Search Results

s4c diode

Abstract: DIODE SMD MARKING 5C smd ic marking SH
Contextual Info: Super Fast Recovery Diode Single Diode mfm OUTLINE Package : STO-220 DF20L60 PyhfLig- ffl Unit-mm Weight 1.5g (Typ) 10.2 600V 20A Feature • SMD 1ralîEE • SMD •trr=70ns • trr=70ns • High Voltage 4.7 Main Use - PFC • PFC(Power Factor Correction)

Contextual Info: Formosa MS SMD Small Signal Switching Diode BAS16T/BAV70T/BAW56T/BAV99T List List. 1 Package outline. 2

10LC20U

Abstract: 10LC20 spacification DIODE smd marking MO 10LC2 smd diode marking JC DF10LC20U
Contextual Info: Super Fast Recovery Diode Twin Diode m tm m o u tlin e DF1 0 LC 2 0 U 20 0V 10A Feature • SMD • Low Noise • trr-35ns • SMD • e y -rx • trr-3 5 n s Main Use • D C /D C D y / K - Ï • m m , OA.RBE • a e .F A • • • • Switching Regulator

SMD M1B diode

Abstract: SMD M1B sr smd diode smd marking KM m1b marking smd diode A4 J532 M3FL20U smd diode sr SMD marking "SR"
Contextual Info: Super Fast Recovery Diode mtm OUTLINE Single Diode M3FL20U U nit-m m W eight 0.072g Typ Package : M2F Jj V—Y-?—? 200V 3A Feature • /J v P S M D • Small SMD • ß y -rx • trr= 3 5 n s • Low Noise G> \4 • trr=35ns • Low V f=0.95V • <SV f=0.95V

Contextual Info: Super Fast Recovery Diode Single Diode OUTLINE D2FK60 Unit* mm Weight O.lötf Typ Package : 2F a y -K v -» / Cattaxlr mark 600V 1.5A Feature !> — M - •HJBEE • Small SMD • High Voltage • trr= 7 5 n s • trr-7 5 n s • <£V f=1.3V • Low Vf=1.3V

smd diode 27c

Abstract: marking smd NU smd diode marking sim kb MARKING SMD Diode marking 27C SMD MARKING DIODE VU smd marking nu smd diode marking NN smd marking 2x DG1M3
Contextual Info: Schottky Barrier Diode Single Diode m tm m DG1M3 o u t lin e Package : G 1 F Unu:mm Weight O.O llii Typ 30 V 1A in 3 Feature • • • • • lâiW§y=0.8mm • ß V f = 0.46 V • 1ftlR= 0.05mA i |C24 Ultra-small SMD Ultla-thin PKG=0.8mm Low Vf -0.46V

J532

Abstract: WTT device marking marking BTJ
Contextual Info: Schottky Barrier Diode mtmm Single Diode M1FJ4 40V1.5A o u t l in e io V - P v - ? Cathode mark CD Feature l • /J v g y S M D - Small SMD > Tj=150°C 1Tj=150°C 1Low lR=0.05mA 1Resistance for thermal run-away • < S lR = 0 .0 5 m A :u ic < n Unit-mm Weight 0.027g Typ

marking 33a on semiconductor

Abstract: 2TWR smd diode code marking 33A SMD MARKING CODE tvw marking code vu
Contextual Info: Schottky Barrier Diode mtmm o u t l i n e Single Diode M1FS4 U nit I mm Package : M1F W eight 0 .0 2 7 tf T y p 40 V 1.33A &y—Kv—? Cathode mark Feature • /JvgaSMD • Small SMD • V f=0.55V • Low V f=0.55V • P R R S M ^ n '^ > '> x (* !iE • P rrsm Rating

Contextual Info: Schottky Barrier Diode Single Diode D3FP3 U nit I mm Package : 2F Weight 0.16tf Typ ay— K v -y 30V 3A ' Cathode mark Feature • î • £«» • Small SMD • Ultra-Low Vf=0.4V S V f = 0 .4 V Main Use • n y x u - im s it • D C t U ^ lO R f f l

Contextual Info: Single Diode M1FH3 Schottky Barrier Diode mtmm o u t l in e 30V 1.5A io V - P v - ? C ath o d e m ark CD Feature I Small SMD Super-Low V f= 0 .3 6 V •g e < g V F = 0 .3 6 V Unit-mm Weight 0.027g Typ Package : M1F H92 1 , T y p e No. Main Use • D C /D C

smd diode marking zf

Abstract: DF10SC4M smd diode marking c MTKM Diode 1_b SMD
Contextual Info: Schottky Barrier Diode Twin Diode w nnm o u tlin e DF10SC4M 4 0 V 10 A Feature • SM D • SMD • P rrsm T K ^ V S / i & S I • Prrsm Rating 1High lo Rating-Small-PKG » 'J i3 ü * S S 3 S g l Main Use • D C /D C n y i K — S> • mm. y-A.oA&gg • •

smd 42t

Abstract: Diode type SMD marking PJ J5-32 smd diode marking PJ smd diode marking zf DIODE pj mpav pj diode smd diode pj 55 pj 50 diode smd
Contextual Info: Twin Diode DE5SC6M Schottky Barrier Diode wnnm o u t l i n e Unit : nim Package : E-pack Weight 0 .3 2 6 a T yp 60V 5A CD @ <S> Feature • SM D • • SMD P r rsm T K ^ V S /i & S I • » 'J i3 ü * S S 3 S g l • mm. y-A.oA&gg • • • • I T yp«* No.

JJ SMD diode

Abstract: diode smd marking WP smd diode marking JJ 6 pin smd diode 140KW 6402W
Contextual Info: SIEMENS BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package

T731

Abstract: 25K10 smd 1l4 5k100 TN 733 10 C30T04QH C30T04QH-11A T35OT Diode smd 417
Contextual Info: SCHOTTKY BARRIER DIODE C30T04QH C30T04QH-11A 3 0 A /4 0 V FEATURES o | SQUARE-PAK | TO-263AB SMD Packaged in 24mm Tape and Reel : C30T04QH o Tabless T0-220 : C30T04QH-11A ODual Diodes •Cathode Common oL ow Forward Voltage Drop o High Surge Capability O T j = 150°C operation

smd marking JD

Abstract: JJ SMD diode smd diode JD smd diode je smd transistor JE smd diode bas16t smd diode marking JJ smd marking JE smd diode A2 BAV70T
Contextual Info: Diodes SMD Type Switching Diode BAS16T;BAW56T BAV70T;BAV99T SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 +0.01 0.1-0.01 +0.05 0.8-0.05 1 +0.15 1.6-0.15 2 0.55 Features 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter

IM182

Abstract: smd diode code jc
Contextual Info: 5 /a s /h *- AUT' S H ^ - h Schottky Barrier Diode OUTLINE DIMENSIONS DF40SC3L 10 .2 ± a : M Date code 30V 40A @ aa^t_ Type No. Polarity >SMD >Tjl50°C US V f = 0.45 V 05 Ö 40SC3L mu ) P rrs m 7 7 Unit •mm Package I STO-220 0. [±0.1 0.7±a 1. 2 ± 0 -

smd diode 819

Abstract: 30n60
Contextual Info: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO

JJ SMD diode

Contextual Info: S/as/h= *P - A U T ' Schottky Barrier Diode O UTLINE D IM E N S IO N S DF30SC3ML U n it • m m Package I STO-220 -I n 9 ±0.5 30V 30A >SMD > T jl5 0 °C H £V f = 0.45 V Prrsm 77 V 5 V 'J i ffiti n m -xm zam m »SRSÜ ►DC/DC n y j K — t f — h s

10SC4M

Abstract: f10sc4
Contextual Info: S /a v M * - K U 7 S W Schottky Barrier Diode - I * O U T LIN E D IM E N S IO N S DF10SC4M U nit • mm P a c k a g e I S T O -2 2 0 10 . 2 ± a : M 40 V 10 A 0 .5 ±a @ Date code ati^i_ 2 Type No. 05 Ö 10SC4M m a Polarity >SMD Il >Tjl50°C >Prrsm t j ^ y ' j I ffiti

Contextual Info: • lililí! Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode v0E, u, CE sat typ Combi Pack ^fi(typ) 500 V 44 A 2.1 V 55 ns TO-247SMD* Symbol Test Conditions VCES VCOR Jj 25°C to 150°C T,J = 25°C to 150°C; Rb t VGES VQEM Continuous

Contextual Info: IGBT with Diode CES IXGH12N100U1 IXGH 12N100AU1 L O W V CE S« | High Speed OC Jj K g 1000 V 1000 V Test Conditions V VCGR Tj Tj v OES VGEM Continuous Transient ^C25 ^CM Tc =25=C Tc =90°C T c = 25° C, 1 ms SSOA (RBSOA VG6 = 1 5 V ,T VJ= 125° C, RG= 1 5 0 Q

E91231

Abstract: IS660 IS661 IS662 IS660X ic smd code sm
Contextual Info: IS660, IS661, IS662 IS660X, IS661X, IS662X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS z UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATION APPROVALS z VDE 0884 in 3 available lead form : - STD - G form z High BVCEO 400V min. - IS662

Contextual Info: PD 9.1414A International IO R Rectifier IR L M S 6 7 0 2 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channei MOSFET . * «1 : n V q ss J f , * *| O'— JJ — G ~ iJ L-f~ s = -20V ^ D S (o n ) =

Drive circuit for IGBT using IR2130

Abstract: Schematic Drive circuit for IGBT using IR2130 SMD LD3 smd diode h15 AN-985 two IR2130 12 output single phase IR2130 MP816 ac motor speed control circuit ir2130 h1n1
Contextual Info: International ion R e c tifie r D e sig n T ips DT 93-6B INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 MINIATURIZATION OF THE POWER ELECTRONICS FOR MOTOR DRIVES By G erry Limjuco & Dana Wilhelm