A82 SMD
Abstract: marking code jg SMD diode smd diode marking jg smd diode A82 marking code JG SMD d1875 smd A82 smd code A82 BAV70-184 smd diode code F3
Contextual Info: SMD Switching Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF VRRM (V) VF (V) IF (mA) SMD Diodes Max. Max. Diode Max. Reverse Reverse CapaciPackCurrent Recov- tance Pinout age @ VR ery Time @1MHz Diag. 0V
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twt4148s-221f5twt4148a-120f5twt4148c-121f5twt4148s-221wt+12twt4148a-120wttwt4148c-121wta82 smdmarking code jg smd diodesmd diode marking jgsmd diode a82marking code jg smdd1875smd a82smd code a82bav70-184smd diode code f3
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smd diode A82
Abstract: smd diode marking A3 smd code A82 DIODE smd marking A3 marking code JG SMD TWT4148A-120F5 diode SMD MARKING CODE A6
Contextual Info: SMD Switching Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF VRRM (V) VF (V) IF (mA) SMD Diodes Max. Max. Diode Max. Reverse Reverse CapaciPackCurrent Recov- tance Pinout age @ VR ery Time @1MHz Diag. 0V
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twt4148s-221f5twt4148a-120f5twt4148c-121f5twt4148s-221wt+8twt4148a-120wttwt4148c-121wtsmd diode a82smd diode marking a3smd code a82diode smd marking a3marking code jg smddiode smd marking code a6
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smd diode code g3
Abstract: smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
Contextual Info: Advanced Technical Information Three phase full Bridge GWM 160-0055X1 VDSS = 55 V ID25 = 160 A RDSon typ. = 2.3 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C
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160-0055x1160-0055x1-bl160-0055x1-sl160-0055x1-smd+10smd diode code g3smd diode code g4smd diode g6 diode s4 39 smd diodesmd diode s4smd diode code mjsmd diode s6diode marking s4 45smd s6 55 asmd diode code slsmd diode marking code g6
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smd diode S4
Abstract: smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004p3diod00720070628b220-004p3-sl+11220-04p3-blsmd diode s4smd diode code g3smd marking code 503 ksmd diode s6s4 diodes6 diodesmd diode marking code l2smd marking g3smd diode code s6smd marking g5
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Diode smd s6 68
Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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gwm100-0085x1if110id110a0-0085x1+13100-085x1-sl100-085x1-smd100-0085x1diode smd s6 68s4 42 diodesmd diode g6 diode s4 39 smd diodediode marking s6 77smd diode g6smd diode s6diode smd s6 68 g1s3 marking diodesmd diode code 03asmd diode marking 77
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SMD MARKING code L1
Abstract: smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
Contextual Info: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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180-004x2if110id1101004x2+12180-004x2-sl180-004x2-smdsmd marking code l1smd diode g6 diode s4 39 smd diodesmd diode marking code l2smd diode s6diode smd marking l3smd diode s4smd diode code mjsmd diode g5smd marking g5smd mosfet marking code tj
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smd diode code mj
Abstract: smd diode code SL
Contextual Info: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS
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160-0055p3smd diode code mjsmd diode code sl |
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smd diode S6
Abstract: smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V =1 80 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004p3220-003p3-smd20081126fsmd diode s6+9smd diode s4s4 diodesmd marking g5smd diode g5smd diode g6diode s4g1 smd diodes3 marking diodesmd marking s6
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SMD MARKING QG 6 PIN
Abstract: smd diode code g4 SMD DIODE DEVICE sl smd diode marking 77 smd marking SL SMD diode NC All smd diode marking smd diode l2 smd diode S6 smd diode MARKING 03A
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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gwm100-0085x1if110id110100-085x1-smd+11100-0085x1smd marking qg 6 pinsmd diode code g4smd diode device slsmd diode marking 77smd marking slsmd diode ncall smd diode markingsmd diode l2smd diode s6smd diode marking 03a
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smd diode S4
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004p3100-01x1-smd20070906csmd diode s4 |
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smd diode g6
Abstract: smd S4 36 SMD diode MARKING CODE g6 smd g5
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004p3220-003p3-smd20080527esmd diode g6+3smd s4 36smd diode marking code g6smd g5
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S4 42 DIODE
Abstract: smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
Contextual Info: GWM100-0085X1 VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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gwm100-0085x1if110id110100-0085x1-smd+5100-0085x1s4 42 diodesmd diode g6 diode s4 39 smd diodesmd diode s4 28diode s4 37
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S4 42 DIODE
Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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gwm100-0085x1id110if110100-0085x1+10100-0085x1-smds4 42 diodesmd diode s6smd diode code g3diode marking s6 77smd diode g6 diode s4 39 smd diodesmd diode code g4smd diode code g2smd sldiode s4 37
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smd diode code SL
Abstract: smd diode g6 DIODE S4 39 smd diode smd diode code g3 SMD mosfet MARKING code TC S4 SMD Marking Code SMD MARKING CODE s4 smd diode code g4 smd diode code s3 smd diode marking s4 smd diode S6
Contextual Info: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode
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160-0055p3smd diode code slsmd diode g6 diode s4 39 smd diodesmd diode code g3+7smd mosfet marking code tcs4 smd marking codesmd marking code s4smd diode code g4smd diode code s3smd diode marking s4smd diode s6
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Contextual Info: GWM 160-0055P3 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode
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160-0055p3 |
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smd diode code mj
Abstract: SMD marking code 542 smd diode code g6 9 GWM 100-01X1 smd diode code g4 smd marking BL smd diode code s6 welding mosfet smd diode g6 DIODE S4 39 smd diode TR 505 diode
Contextual Info: Advanced Technical Information Three phase full Bridge GWM 100-01X1 VDSS = 100 V ID25 = 90 A RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C
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100-01x1160-0055p320070706asmd diode code mj+9smd marking code 542smd diode code g6 9gwm 100-01x1smd diode code g4smd marking blsmd diode code s6welding mosfetsmd diode g6 diode s4 39 smd diodetr 505 diode
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smd diode code SL
Abstract: smd diode code mj
Contextual Info: GWM 120-0075P3 Three phase full Bridge VDSS = 75 V ID25 = 125 A RDSon typ. = 3.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ± 20
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120-0075p320070628bsmd diode code slsmd diode code mj |
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G3VM-21GR1
Abstract: MARKING 358 SOP-8 diode 6pin SMT G3VM-61G1 G3VM-21GR G3VM-21LR G3VM-21LR1 G3VM-41GR5 g3vm-61e1 G3VM-41LR5
Contextual Info: SELECTION GUIDE – MOS FET Relays MOS FET G3VM PCB Mount G3VM SMT G3VM SOP Dimensions mm in Please refer to data sheets for all dimension information Please refer to data sheets for all dimension information Please refer to data sheets for all dimension information
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120ma500vacg3vm-401ey000vac+12g3vm-401gg3vm-401hg3vm-21gr1marking 358 sop-8diode 6pin smtg3vm-61g1g3vm-21grg3vm-21lrg3vm-21lr1g3vm-41gr5g3vm-61e1g3vm-41lr5
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DIODE marking S6 57
Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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gmm3x60-015x1if110id1103x60-015x1+9diode marking s6 57diode marking s4 57smd diode code s1 96diode marking s6 96smd diode .s6 22smd diode s4 96smd diode g6control of starter-generators4 diode
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SMD mosfet MARKING code TC
Abstract: smd diode g6 SMD MARKING CODE s4 IF110 diode L2 smd smd diode code g3 smd diode code g6 smd diode marking code L2 Control of Starter-generator DIODE marking S6 57
Contextual Info: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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gmm3x60-015x2if110id1103x60-015x2+9smd mosfet marking code tcsmd diode g6smd marking code s4diode l2 smdsmd diode code g3smd diode code g6smd diode marking code l2control of starter-generatordiode marking s6 57
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IF110
Abstract: smd diode code g6 smd diode g6 3x60-015X2 Control of Starter-generator marking G3 S3 marking DIODE smd diode code g3 smd diode code g4 smd L2 diode
Contextual Info: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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gmm3x60-015x2if110id1103x60-015x2+8smd diode code g6smd diode g6control of starter-generatormarking g3s3 marking diodesmd diode code g3smd diode code g4smd l2 diode
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smd diode g6
Abstract: marking G3 IF110 GMM3x60-015X1
Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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gmm3x60-015x1if110id1103x60-015x1+2smd diode g6marking g3
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Contextual Info: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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gmm3x60-015x2if110id1103x60-015x2 |
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G3VM-202J1
Abstract: G3VM-61H1 smd transistor 351A smd 351a G3VM-401A G3VM-61G1 G3VM-41GR5 351A smd transistor G3VM G3VM-61D1
Contextual Info: Electronic Components G3VM Selection Guide UNITED STATES, MEXICO, and SOUTH AMERICA excluding Brazil OMRON ELECTRONICS LLC Schaumburg, IL www.omron.com/oei OMRON CANADA, INC. Toronto, Ontario www.omron.ca 847.882.2288 CANADA SALES OFFICE 416.286.6465 BRAZIL SALES OFFICE
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y0i-e-02jb301-e3-01g3vm-202j1g3vm-61h1+8smd transistor 351asmd 351ag3vm-401ag3vm-61g1g3vm-41gr5351a smd transistorg3vmg3vm-61d1
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