SMD CODE MARKING X18 Search Results

smd marking code 21b

Abstract: 16X16
Contextual Info: V ishay I n tertech n o l o g y, I n c . Capacitors - SMD Aluminum, 125 ºC, Low Impedance I INNOVAT AND TEC O L OGY 146 CTI N HN VISHAY BCcomponents O 19 62-2012 146 CTI SMD Aluminum Capacitors, High Ripple Current Key Benefits • • • • • Soldering heat resistant according to IPC/JEDEC J-STD-020

Contextual Info: V ishay I n tertech n o l o g y, I n c . Capacitors - SMD Aluminum, 125 ºC, Low Impedance I INNOVAT AND TEC O L OGY 146 CTI N HN VISHAY BCcomponents O 19 62-2012 146 CTI SMD Aluminum Capacitors, High Ripple Current Key Benefits • • • • • Soldering heat resistant according to IPC/JEDEC J-STD-020

PA 6/6 GF30 SIEMENS

Abstract: Siemens Ferrite B65541 ferrite ei core n27 TESLA mh 7400 CRASTIN SO 655 IEC 60205 Luvocom B64290-A38 etd59 siemens Siemens Ferrite B64290
Contextual Info: Contents Selector Guide Index of Part Numbers 5 11 26 SIFERRIT Materials 33 General – Definitions Application Notes Processing Notes 111 128 150 Packing Quality Considerations Standards and Specifications 165 174 177 RM Cores PM Cores EP Cores 181 274 290

marking code x328 SMD ic

Abstract: diode X318 micronetics M3500 DIODE ZENNER C25 marking code c41 SMD ic smd x327 50V X375 x289 X644 X614
Contextual Info: 5 4 3 2 1 CA4-D 100pF 5 7 +3V TP9 +3V 8 7 6 5 4 3 2 1 8 7 6 5 4 3 2 1 8 7 6 5 4 3 2 1 1 R13 R22-A R22-B R22-C R22-D R22-E R22-F R22-G R22-H R11-A R11-B R11-C R11-D R11-E R11-F R11-G R11-H R12-A R12-B R12-C R12-D R12-E R12-F R12-G R12-H 220 220 220 220 220

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . VISHAY BCcomponents 146 CTI 146 CTI SMD Aluminum Capacitors, High Ripple Current KEY BENEFITS • • • • • Soldering heat resistant according to IPC/JEDEC J-STD-020 Low impedance down to 0.035 Ω at 20 °C, 100 kHz

SMD MARKING CODE A20

Abstract: smd marking code G16 smd transistor w19 5962-99B01 SMD MARKING CODE w19 5962-99B0103 smd transistor w18 Department of Defense 99b01 smd transistor mark E13 MARKING SMD x9
Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED Add case outlines U, T, and M. Add all radiation requirements. -tmh 00-02-08 Monica L. Poelking B Add 3.3 V option throughout document. - tmh 00-03-30 Monica L. Poelking C Add dose rate note 5/ to paragraph 1.5. Add dose rate requirement to

MM5829-2700

Abstract: MM8030-2600 ANCL11G57SAA165 ANCL11G57 CSR BC5MM MICROCHIP 2012 SMD MARKING AS-M15SA-R CA0TB MEDIATEK z5v cap
Contextual Info: MURATA PRODUCTS 2010-2011 2010-2011 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.

Contextual Info: Features • ■ RX 110 ■ ■ Applications Radial Leaded Devices Cured, flame retardant epoxy polymer insulating material meets UL 94V-0 requirements Bulk packaging, tape and reel and AmmoPak available on most models Almost anywhere there is a low voltage

philips tcxo 4322 191

Abstract: TDA 17821 philips 341 mkc TDA 7283 PHILIPS TCXO 4322 191 2 capacitor philips 341 mkc tda 3050 Philips 2222 053 90032 capacitors 594 varistor philips UAA 1250
Contextual Info: BC Components Product Guide 1999 Contents Page BC Components 5 World Wide Web 6 Ordering 7 New Products & Highlights 9 Series Index 10 Ceramic Capacitors, Leaded 13 Film Capacitors 34 Electrolytic Capacitors 59 Film Dielectric Trimmer Capacitors 103 Fixed Linear Resistors

MOV 270/20

Abstract: 2322 640 90007 NTC thermistor philips phct 203 VARISTOR 275 K20 cma 00124 BC 2222 037 71109 ic 40154 2322 661 91002 UAA 1006 34821
Contextual Info: Information Product guide 200 BCcomp Information World wide web New products and highlights Series index Ceramic capacitors Film capacitors Electrolytic capacitors Variable capacitors Linear resistors Non-linear resistors Switches and potentiometers 02/2003

usb/PAL 0073 pioneer

Abstract: DIODE smd marking s4 82a x160 protector smd polyswitch fuse marking
Contextual Info: Circuit Protection Products Catalog 2013-2014 • Overtemperature Protection • Overvoltage Protection • Overcurrent Protection • Hybrid Protection 2013_CP_Cover_OFC-OBC-Spine-2013-14.indd 3 8/22/13 4:07 PM This catalog is intended to present application, product, and technical data to assist the user in selecting circuit

smd transistor marking HT1

Abstract: SMD MARKING CODE ht1 smd dk qk A212 A221 mt49h32m18cfm-25 RLDRAM mt49h smd code marking CK Ht1 SMD CODE SAC305 reflow bga
Contextual Info: 576Mb: x9, x18 2.5V Vext, 1.8V Vdd, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock

UDA1360T

Contextual Info: INTEGRATED CIRCUITS DATA SHEET UDA1360TS Low-voltage low-power stereo audio ADC Preliminary specification Supersedes data of 1998 Oct 02 File under Integrated Circuits, IC01 2000 Feb 08 Philips Semiconductors Preliminary specification Low-voltage low-power stereo audio ADC

SMD code 307C

Abstract: THERMISTORS SCK 055 ic 91214 2322 661 91002 PTC 1k thermistor conversion table ptc thermistor 500 ohm 307C 1170 X1224 ptc thermistor 10k THERMISTORS SCK 016
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book PTC THERMISTORS vishay vse-db0061-0610 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

RLDRAM

Abstract: MT49H16M18C
Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization

smd transistor marking HT1

Abstract: MT49H16M36 MICRON BGA PART MARKING MARKING SMD x9 RLDRAM
Contextual Info: 576Mb: x9, x18, x36 2.5V Vext, 1.8V Vdd, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options • 533 MHz DDR operation 1.067 Gb/s/pin data rate

MICRON BGA PART MARKING

Abstract: MT49H16M18 smd transistor marking HT1 A191 A201 MT49H32M9 MT49H8M36 RLDRAM mt49h
Contextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate

MT49H16M18C

Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization

MT49H16M18C

Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization

smd transistor marking HT1

Abstract: MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08
Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 28.8 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization

MT49H16M18

Contextual Info: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate

MICRON BGA PART MARKING

Abstract: MT49H16M36
Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate

RLDRAM mt49h

Abstract: MT49H16M18C
Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization

smd code marking x18

Abstract: MT49H16M36
Contextual Info: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate