SMD BR 32 Search Results

smd diode marking c1

Contextual Info: SMD Schottky Barrier Diode Arrays CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device Features SOT-363 -Low forward voltage drop. -Fast switching. -Ultra-small surface mount package. -PN junction guard ring for transient and ESD

SMD15N05

Abstract: SMU15N05
Contextual Info: SMD/SMU15N05 Siliconix NĆChannel EnhancementĆMode Transistors 175_C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 50 0.10 15 TOĆ251 D TOĆ252 G Drain connected to Tab G D S Top View Order Number: G SMD15N05 D S S Top View

SMU10P05

Abstract: SMD10P05 SMU10P SMD SMU10P05
Contextual Info: SMD/SMU10P05 Siliconix PĆChannel EnhancementĆMode Transistors Product Summary V BR DSS (V) rDS(on) (W) IDa (A) -50 0.28 -10 TOĆ251 S TOĆ252 G Drain Connected to Tab G D S Top View Order Number: G SMD10P05 D D S PĆChannel MOSFET Top View Order Number:

SMD15N

Contextual Info: Tem ic SMD/SMU15N05 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) Id3 (A) 50 0.10 15 TO-251 TO-252 o —im o FT] G D D rain connected to Tab S Ô Top View O rder Number: G SMD15N05

SMD15N05

Abstract: SMU15N05
Contextual Info: Tem ic SMD/SMU15N05 Semiconductors N-Channel Enhancement-Mode Transistors Product Summary V BR DSS 50 (V) IDa (A) r DS(on) ( ^ ) 0.10 15 TO-251 D O TO-252 o o TT Drain connected to Tab G D S Top View Order Number: SMD15N05 Ô s G D S Top View Order Number:

SMD15N05

Abstract: SMU15n05
Contextual Info: SMD/SMU15N05 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 50 0.10 15 TO-251 D TO-252 G Drain connected to Tab G D S Top View S Order Number: G SMD15N05 D S N-Channel MOSFET Top View Order Number: SMU15N05 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

SMD SMU10P05

Abstract: SMD10P05
Contextual Info: Tem ic SMD/SMU10P05 Semiconductors P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) IDa (A) r DS(on) ( ^ ) 0.28 -5 0 -1 0 TO-251 s o TO-252 o o G O- Drain Connected to Tab nr G D S Top View Order Number: SMD10P05 Ö D G D S Top View Order Number: SMU10P05

SMU10P

Abstract: SMD SMU10P05 smu10p05 SMD10P05 smd10p SMU10
Contextual Info: Tem ic SMD/SMU10P05 Siliconix P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V ) r DS(on) (Π) lD a (A) -5 0 0.28 -1 0 s T O -2 5 1 Q T O -252 O O o G D it It Drain Connected to Tab S Top View Order Number: G SMD10P05 D S P-Channel M OSFET

transistor smd marking BA

Abstract: smd transistor marking br MARKING SMD TRANSISTOR P smd transistor marking ba SMD BR 32 2SB1132 SMD SMD TRANSISTOR BR transistor smd br transistor smd marking BR br smd transistor
Contextual Info: Transistors SMD Type Medium Power Transistor 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO

smd transistor marking br

Abstract: smd transistor marking da smd marking DA transistor SMD DA MARKING SMD TRANSISTOR P SMD BR 32 DA SMD transistor smd marking smd transistor marking 1 da transistor 2SD1664
Contextual Info: Transistors SMD Type Medium Power Transistor 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5

Contextual Info: SMD Type Product specification 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V -1 A Collector Current

marking 2sd1664

Contextual Info: Transistors Diodes SMD Type Product specification 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO

SMD TRANSISTOR MARKING BR

Abstract: MARKING SMD NPN TRANSISTOR BR 2SC4705 VEBO-15V transistor smd marking BR SMD BR 12
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4705 Features High DC current gain hFE=800 to 3200 . Low collector-to-emitter saturation voltage : VCE(sat) 0.5V max. High VEBO : VEBO 15V. Small size making it easy to provide high-density,

VEBO-15V

Abstract: 2SC4390 npn smd 2a
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4390 Features Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V).

smd transistor marking cf

Abstract: MARKING CF smd marking CF VEBO-15V SMD BR 17 transistor smd cf 2SC3650
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC3650 Features High DC current gain hFE=800 to 3200 . Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capacity (IC=1.2V). Very small size making it easy to provide highdensity,

Contextual Info: Transistors SMD Type PNP High Voltage Amplifier MMSTA92 SOT-323 Unit:mm 1.3±0.1 2 2.3±0.15 1 1.25±0.1 • Features 0.525 0.65 ● High breakdown voltage ● Low collector-emitter saturation voltage 0.36 3 ● Complementary to MMSTA42 0.3±0.1 0.1 +0.05

Contextual Info: Transistors SMD Type Product specification MMSTA92 SOT-323 Unit:mm 1.3±0.1 2 2.3±0.15 1 1.25±0.1 • Features 0.525 0.65 ● High breakdown voltage ● Low collector-emitter saturation voltage 0.36 3 ● Complementary to MMSTA42 0.3±0.1 0.1 +0.05 -0.02

Contextual Info: Transistors SMD Type Product specification MMSTA42 SOT-323 Unit:mm 1.3±0.1 1 0.525 0.65 2 2.3±0.15 ● High breakdown voltage 1.25±0.1 • Features ● Low collector-emitter saturation voltage 0.36 3 ● Complementary to MMSTA92 0.3±0.1 0.1 +0.05 -0.02

Contextual Info: Transistors SMD Type NPN High Voltage Amplifier MMSTA42 SOT-323 Unit:mm 1.3±0.1 1 0.525 0.65 2 2.3±0.15 ● High breakdown voltage 1.25±0.1 • Features ● Low collector-emitter saturation voltage 0.36 3 ● Complementary to MMSTA92 0.3±0.1 0.1 +0.05

Contextual Info: Transistors SMD Type High Voltage PNP Transistors MMST5401 SOT-323 Unit:mm 1.3±0.1 2 2.3±0.15 • Features 1.25±0.1 1 0.525 0.65 ● Ultra-Small Surface Mount Package 0.36 3 ● Ideal for Medium Power Amplification and 0.3±0.1 ● Complementary NPN Type Available MMST5551

smd transistor FY

Abstract: smd marking fy transistor smd marking FY MARKING FY sot-23 15V vebo smd transistor marking FY transistor SMD 2sc3661 2 fy 2SC3661 VEBO-15V
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC3661 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 High DC current gain hFE=800 to 3200 . 1 Low collector-to-emitter saturation voltage (VCE(sat) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0.5V).

Contextual Info: Transistors SMD Type High Voltage NPN Transistor MMST5551 SOT-323 Unit:mm 1.3±0.1 2 2.3±0.15 1.25±0.1 1 • Features 0.525 0.65 ● Ultra-Small Surface Mount Package 0.36 3 ● Ideal for Medium Power Amplification and Switching 0.3±0.1 ● Complementary PNP Type Available MMST5401

SMD diode za

Abstract: Marking Code SMD za SMD marking code B0 SMD diode smd part marking b1 sot smd diode code b1 smd code marking za sot-23 MARKING CODE ZA MARKING ZA marking code B0 SMD diode A11 smd
Contextual Info: RB706F-40 Low VF SMD Schottky Barrier Diode Small Signal Diode SOT-323 3 A 1 F 2 B E Features —Low reverse current high reliability C G D —Surface device type mounting —Mositure sensitivity level 1 —Matte tin Sn lead finishe with Nickel (Ni) underplate

smd marking S9

Abstract: MARKING MG diode diode W1 diode marking w1 MARKING CODE MG diode "MARKING CODE S9"
Contextual Info: RB500V-40 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-323F B Features A C —Low power loss,high current capability,low VF —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate