SMD BR 32 Search Results

MMBV2107

Abstract: MMBD701LT1 MMBV609LT1 SMD BR 32 IFM450 BAV170LT c30 diode BAS116LT1 BAS21LT1 BAV170LT1
Contextual Info: MX-MICROELECTRONICS SOT-23 PACKAGE • • • • • • • 片式开关二极管 SMD SWITHING DIODES • 片式开关二极管 SMD SWITHING DIODES SOT-23 SMD VARACTOR DIODES 型号 TYPE V(BR) Vdc Min Vdc IR A top VF Vdc IF MA Min IR trr ns PIN 123 Max

Contextual Info: SMD Schottky Barrier Diode Arrays CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device Features SOT-363 -Low forward voltage drop. -Fast switching. -Ultra-small surface mount package. -PN junction guard ring for transient and ESD

smd diode marking c1

Contextual Info: SMD Schottky Barrier Diode Arrays CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device Features SOT-363 -Low forward voltage drop. -Fast switching. -Ultra-small surface mount package. -PN junction guard ring for transient and ESD

Contextual Info: Lead Frame Type J-Bend Flat Top Photodiode TCI Part No. TIRSPD-PGF-4439K TIRSPD-PGF-4439C Matrial Silicon Silicon SMD Photodiode Chip IL Power mW/sr Rise & Fall Time V(BR) R (nS) Min.(V) Ee=mW/cm2 Typ.(uA) Ee=mW/cm2 Max.(nA) Lens Color Black 50/50 32 1.0

beta 3435

Abstract: QT06015-054 3773 SMD 142012 76118 202F NTC Thermistor 301
Contextual Info: .019 .002 .039 .002 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=3435 OPERATING TEMPERATURE: -40C TO 125C DISSIPATION CONSTANT: 2.5 mW/C MIN POWER RATING: 250mW AT 25C .019 .002 NOTES: SMD 0402 PACKAGE DRAWN INITIAL DATE BR 11/24/2009 2108 CENTURY WAY

49319

Abstract: 62277 175656 QT06015-055 smd 4468
Contextual Info: .031 .004 .063 .004 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=4100 OPERATING TEMPERATURE: -40C TO 125C DISSIPATION CONSTANT: 3.5 mW/C MIN POWER RATING: 350mW AT 25C .037 .004 NOTES: SMD 0603 PACKAGE DRAWN INITIAL DATE BR 11/24/2009 2108 CENTURY WAY

Contextual Info: PCB Chip Type Concave Chip Photodiode with Flat Top TCI Part No. TIRSPD-P2F-3227C Matrial Silicon SMD Photodiode Chip IL Power mW/sr Rise & Fall Time V(BR) R (nS) Min.(V) Ee=mW/cm2 Typ.(uA) Ee=mW/cm2 Max.(nA) Lens Color Water Clear 10/10 32 1.0 6.5 10 www.taitroncomponents.com

Contextual Info: Reflector Type J-Bend Flat Top 2 Lead LED TCI Part No. TIRSPD-LJL-3022C Matrial Silicon SMD Photodiode Chip IL Power mW/sr Rise & Fall Time V(BR) R (nS) Min.(V) Ee=mW/cm2 Typ.(uA) Ee=mW/cm2 Max.(nA) Lens Color Water Clear 6/6 32 1.0 1.2 10 www.taitroncomponents.com

SMD15N05

Abstract: SMU15N05
Contextual Info: SMD/SMU15N05 Siliconix NĆChannel EnhancementĆMode Transistors 175_C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 50 0.10 15 TOĆ251 D TOĆ252 G Drain connected to Tab G D S Top View Order Number: G SMD15N05 D S S Top View

JTs smd diode

Abstract: SMD15N05 SMU15N05 TD 33b 25A15
Contextual Info: Temic SMD/SMU15N05 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary tDa A 15 r DS(on) (Q ) 0.10 V (BR)DSS (V) 50 TO-251 TO-252 o in D O O rO Drain connected to Thb G D S Top View Order Number: SMD15N05

SMU10P05

Abstract: SMD10P05 SMU10P SMD SMU10P05
Contextual Info: SMD/SMU10P05 Siliconix PĆChannel EnhancementĆMode Transistors Product Summary V BR DSS (V) rDS(on) (W) IDa (A) -50 0.28 -10 TOĆ251 S TOĆ252 G Drain Connected to Tab G D S Top View Order Number: G SMD10P05 D D S PĆChannel MOSFET Top View Order Number:

SMD15N

Contextual Info: Tem ic SMD/SMU15N05 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) Id3 (A) 50 0.10 15 TO-251 TO-252 o —im o FT] G D D rain connected to Tab S Ô Top View O rder Number: G SMD15N05

SMD15N05

Abstract: SMU15N05
Contextual Info: Tem ic SMD/SMU15N05 Semiconductors N-Channel Enhancement-Mode Transistors Product Summary V BR DSS 50 (V) IDa (A) r DS(on) ( ^ ) 0.10 15 TO-251 D O TO-252 o o TT Drain connected to Tab G D S Top View Order Number: SMD15N05 Ô s G D S Top View Order Number:

SMD15N05

Abstract: SMU15n05
Contextual Info: SMD/SMU15N05 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 50 0.10 15 TO-251 D TO-252 G Drain connected to Tab G D S Top View S Order Number: G SMD15N05 D S N-Channel MOSFET Top View Order Number: SMU15N05 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

SMD SMU10P05

Abstract: SMD10P05
Contextual Info: Tem ic SMD/SMU10P05 Semiconductors P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) IDa (A) r DS(on) ( ^ ) 0.28 -5 0 -1 0 TO-251 s o TO-252 o o G O- Drain Connected to Tab nr G D S Top View Order Number: SMD10P05 Ö D G D S Top View Order Number: SMU10P05

SMD10P05

Abstract: smu10p05 SMU10P SMD SMU10P05
Contextual Info: SMD/SMU10P05 P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) IDa (A) –50 0.28 –10 TO-251 S TO-252 G Drain Connected to Tab G D S Top View Order Number: D G SMD10P05 D S P-Channel MOSFET Top View Order Number: SMU10P05 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

smu10p05

Abstract: SMD10P05 SMU10P SMD SMU10P05 SMU10 13 SMD
Contextual Info: SMD/SMU10P05 P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) IDa (A) –50 0.28 –10 TO-251 S TO-252 G Drain Connected to Tab G D S Top View Order Number: D G SMD10P05 D S P-Channel MOSFET Top View Order Number: SMU10P05 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

SMU10P

Abstract: SMD SMU10P05 smu10p05 SMD10P05 smd10p SMU10
Contextual Info: Tem ic SMD/SMU10P05 Siliconix P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V ) r DS(on) (Π) lD a (A) -5 0 0.28 -1 0 s T O -2 5 1 Q T O -252 O O o G D it It Drain Connected to Tab S Top View Order Number: G SMD10P05 D S P-Channel M OSFET

diode smd marking SD

Abstract: SMD kl7 QW-BA015 smd schottky diode sot363 marking KLB smd marking rl SMD PI SMD 24 oe G marking CDBV6-54AD-G
Contextual Info: c o A tc m r SMD Schottky Barrier Diode Arrays S M D D io d e s S p e c ia lis t CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device Features SOT-363 - L o w f o r w a r d v o l t a g e d ro p. -Fast switching. -Ultra-small surface mount package.

transistor smd marking BA

Abstract: smd transistor marking br MARKING SMD TRANSISTOR P smd transistor marking ba SMD BR 32 2SB1132 SMD SMD TRANSISTOR BR transistor smd br transistor smd marking BR br smd transistor
Contextual Info: Transistors SMD Type Medium Power Transistor 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO

smd transistor marking br

Abstract: smd transistor marking da smd marking DA transistor SMD DA MARKING SMD TRANSISTOR P SMD BR 32 DA SMD transistor smd marking smd transistor marking 1 da transistor 2SD1664
Contextual Info: Transistors SMD Type Medium Power Transistor 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5

Contextual Info: SMD Type Product specification 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V -1 A Collector Current

marking 2sd1664

Contextual Info: Transistors Diodes SMD Type Product specification 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO

Contextual Info: SMD Schottky Barrier Diode CDBF0530-HF I o = 500 mA V R = 20 Volts RoHS Device Halogen Free 1005/SOD-323F Features 0.102 2.60 0.095(2.40) -Low forward voltage. -Designed for mounting on small surface. 0.051(1.30) 0.043(1.10) -Extremely thin / leadless package.