SMD AMDM Search Results

Contextual Info: FAST /T T L Buffered 5-Tap Delay Modules DIP & SMD xxxxx-xxxx Part Number Description G ENERAL: For Operating Specifications and Test Conditions, see Tables I and VII on page 7 of this catalog. Delays specified for the Leading Edge. Buffered 5 Tap Delay Molded Package Series:

AMDM

Abstract: SMD AMDM AMDM-11 AMDM-13 AMDM-15 AMDM-20 AMDM-25 AMDM-30 AMDM-35 AMDM-40
Contextual Info: AMDM Series FAST / TTL Buffered 5-Tap Delay Modules Low Profile 8-Pin Package Two Surface Mount Versions Electrical Specifications at 25OC FAST/TTL 5-tap 8-Pin DIP FAST/TTL Logic Buffered 5 Equal Delay Taps AMDM-7 AMDM-9 AMDM-11 AMDM-13 AMDM-15 AMDM-20 AMDM-25

ic 8pin ttl

Contextual Info: AMDM Series FAST / TTL Buffered 5-Tap Delay Modules • Low Profile 8-Pin Package Electrical Specifications at 25°C Two Surface Mount Versions FAST/TTL 5-tap 8-Pin DIP • FAST/TTL Logic Buffered Tap Delay Tolerances +/- 5% or 2ns +/- 1ns <13ns Tap 1 Tap 2

pulse engineering delay lines

Abstract: fsdm rhombus
Contextual Info: 2! Rhombus Industries Inc. Transformers & M agnetic Products Whetherthe application is Medical Ultrasound low distortion filter, a high frequency RISC precision timing module, or a Telecommunications transformer, our experience and techni­ cal abilities will enable us to provide the component to fit your

Delay Lines

Abstract: SMD 0505 RESISTOR 10K OHMS SMD transistor M05 equivalent ZO 607 TZB12-5 TF80 AMY-5 analog delay line schematic AML1-12-10 PLDM7-2.5
Contextual Info: Rhombus Industries Inc. 2002 Transformers & Magnetic Products Delay Lines Electromagnetic ∆t Logic Buffered Delay Low Distortion Buffered Input / Output Fast Rise Times 5V FAST/TTL & Advanced CMOS Single Output 5 Taps 10 Taps 16 Taps 20 Taps 3V Logic, Low Voltage CMOS

Active (Logic Buffered)

Abstract: AML12-1 SP24L10005 SMD transistor M05 AMY-5 LVMDM-45G PLDM7-2.5 SMD 0505 RESISTOR 10K OHMS smd 2d 1002 -reel TZB4* "cross reference"
Contextual Info: Rhombus Industries Inc. 2001 Transformers & Magnetic Products Delay Lines Electromagnetic ∆t Logic Buffered Delay Low Distortion Buffered Input / Output Fast Rise Times 5V FAST/TTL & Advanced CMOS Single Output 5 Taps 10 Taps 16 Taps 20 Taps 3V Logic, Low Voltage CMOS

sm-tech

Abstract: 90Pb
Contextual Info: SURFACE MOUNT APPLICATIONS GENERAL OVERVIEW: Surface mount technology has been used on hybrid circuits for many years. Its greatest recent advance has been its use on printed circuit board PCB assemblies. Components are attached to the PCB by soldering them directly to metalized solder pads (footprints) on its surface, rather than by insertion

AM27C512

Abstract: AM27C512-90DC 127C512
Contextual Info: ADV MICRO MEMORY b*4E D • 025752Ö 0D31c14b 3 0 e! ■ AMDM a Advanced Micro Devices Am27C512 512 Kilobit (65,536 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc + 1 V — 70 ns ■ High noise immunity

Contextual Info: ADV MICRO MEMORY bME J> • 025752Û 0032000 554 ■ AMDM ZI Advanced Micro Devices Am27C040 4 Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ 100% Flashrite programming — 100 ns ■ Low power consumption — Typical programming time of 1 minute

Contextual Info: Electromagnetic & Logic Buffered Delay Line Catalog Please contact us if you require samples or any additional information on our products or services. Table of Contents Passive Delay Line Application Notes.

Contextual Info: ADV MICRO M E M O R Y b4E J> D2S7S2Ô m 0031^21 T3T Advanced Micro Devices Am27C128 128 Kilobit (16,384 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS Latch-up protected to 100 mA from -1 V to Vcc +1 V • Fast access time — 45 ns High noise immunity

AM27C1024

Contextual Info: ADV MI CRO MEMORY b4E D • DES7SEÖ □ □ 3 1 ci 71 5b4 Advanced Micro Devices A m 27C 1024 1 Megabit (6a,536 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ 100% Flashrite programming — 85 ns — Typical programming time of 8 seconds

D2575

Abstract: AM27C256 AM27C256-55 AM27C256-70
Contextual Info: AD V MICRO MEMORY t4E » • D257S2Ô G03n33 7SO CI Advanced Micro Devices Am27C256 256 Kilobit (32,768 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ Fast access time Latch-up protected to 100 m A from -1 V to Vcc + 1 V — 55 ns ■ Low power consumption

AM27H256

Abstract: DSS755 JCI A3
Contextual Info: bME T> m ADV MICRO MEMORY Q257S2Ö GQ32D7S 'ib'i H A M D M Advanced Micro Devices Am27H256 256 Kilobit (32,768 x 8-Bit) High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — 35 ns — Typical programming time of 4 seconds