SMD 10 20U Search Results
SMD 10 20U Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
BLM15PX330BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN | |||
BLM15PX600SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 60ohm POWRTRN | |||
BLM21HE601SN1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 600ohm NONAUTO | |||
BLM21HE472BH1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 4700ohm POWRTRN | |||
BLM15PX330SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN |
SMD 10 20U Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
KL3L07
Abstract: smd 1f 1f smd transistor SMD Transistor 1f transistor 1f smd
|
Original |
KL3L07 10/1000s, 8/20s, 00V/s KL3L07 smd 1f 1f smd transistor SMD Transistor 1f transistor 1f smd | |
KL3Z18Contextual Info: SHINDENGEN TSS KL Series KL3Z18 SMD OUTLINE DIMENSIONS Case : 1F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Conditions Symbol Tstg Tj VDRM ITSM 10/1000 s, Non-repetitive |
Original |
KL3Z18 10/1000s, 8/20s, KL3Z18 | |
KL3Z07Contextual Info: SHINDENGEN TSS KL Series KL3Z07 SMD OUTLINE DIMENSIONS Case : 1F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Conditions Symbol Tstg Tj VDRM ITSM 10/1000 s, Non-repetitive |
Original |
KL3Z07 10/1000s, 8/20s, KL3Z07 | |
KL3N14
Abstract: SMD Transistor 1f
|
Original |
KL3N14 10/1000s, 8/20s, 00V/s KL3N14 SMD Transistor 1f | |
crystal 12mhz
Abstract: smd transistor ab1 Specification Quartz Crystals 12Mhz 12mhz crystal crystal quartz 16 MHz
|
Original |
12MHz 45MHz 10ppm 50ppm 100ppm 300uW CSX3-AB1-18-19 25ppm crystal 12mhz smd transistor ab1 Specification Quartz Crystals 12Mhz 12mhz crystal crystal quartz 16 MHz | |
Contextual Info: Comchip Low Capacitance ESD Protection Diode SMD Diode Specialist CPDQR5V0SP-HF RoHS Device Halogen Free Features 0402/SOD-923F - IEC61000-4-2 ESD ±8kV (Contact) , ±15kV(Air). - IEC61000-4-4 (FET) rating. 40A( 5/50uS) 0.041(1.05) 0.037(0.95) - IEC61000-4-5 (Lightning) rating. 24A( 8/20uS) |
Original |
0402/SOD-923F IEC61000-4-2 IEC61000-4-4 5/50uS) IEC61000-4-5 8/20uS) 0402/SOD-923F MIL-STD-202 QW-JP025 | |
120uh
Abstract: 208H
|
OCR Scan |
120uH 52Adc MIL-5TD-202G, UL94-V-0 El51556 -H25T 10D5S 120uh 208H | |
Contextual Info: SMD - DETECTOR UV ENHANCED PHOTODIODE FP 20UV50 MADE IN GERMANY ALL MEASUREMENTS IN mm Tol.: ±0,10 2/99 Features VeryHighShuntResistance Internal Quantum Efficiency near100% pad 1,5x1 Application UV Exposure Meters Spectroscopy Water Purification Fluorescence |
Original |
20UV50 near100% 254nm) -10mV) 254nm, | |
Contextual Info: SMD - DETECTOR GaP - PHOTODIODE FP 20UV110 MADE IN GERMANY ALL MEASUREMENTS IN mm Tol.: ±0,10 6/99 Features Wide Bandwidth and High Spectral Sensitivity in the UV Range 250 nm 450 nm, Low Cost Chip Based on GaP, Big Active Area Possible pad 1,5x1 Application |
Original |
20UV110 | |
Contextual Info: SMD - DETECTOR GaP - PHOTODIODE FP 20UV48 MADE IN GERMANY 6/99 Features ALL MEASUREMENTS IN mm Tol.: ±0,10 Wide Bandwidth and High Spectral Sensitivity in the UV Range 250 nm … 450 nm, Low Cost Chip Based on GaP, BigActive Area Possible pad 1,5x1 Application |
Original |
20UV48 2500C | |
Contextual Info: mil Transtek M agnetics ELECTRICAL CHARACTERISTICS: Line Side Inductance: 2.0mH±10% @10KHz,0.1V 1-5 with 2-4 short Leakage Inductance: 20uH Max 100KHz,0.02V 1-5 with 2-4,6,7,8,9 short Chip:Line Turns Ratio: 1CT:3CS±2% @100KHz,50mV DC Resistance: 2.05 OhmsMax 1-4 =2-5 @25°C |
OCR Scan |
10KHz 100KHz 20KHz 400KHz -45dB -70dB 40KHz | |
Contextual Info: 1. Mechanical Dimensions: 2 . S ch e m atic: Line Chip 10- -0 8 302 0 - -0 5 4o- 3. E l e c t r i c a l S p e c i f i c a t i o n s : @25°C 2 .4 9 OCL: Pins 1 - 4 LL: Pins □ □ □ □ _L Cww: 1 -4 Pins 3 m H ±1 0 % 10K H z 0.1V, Tie Pins 2 - 3 20uH |
OCR Scan |
10KHz 100KHz 1975Vac XF0709- AD39S MIL-5TD-202G, UL94V-0 102mm) ULE09M | |
Contextual Info: 1. M e c h a n ic a l D im e n s io n a : 2. S c h e m a t i c : 1 o- 6 o- 2 5 o- - 0 .2 7 0 B 0 .3 6 0 Max ^ r D 4 o- 0 .0 5 0 — I |— i 0.100 o N Ò □□r a o Jo 3. E l e c t r i c a l OCL: 20uH □ □ □ -I DCR: - 0.100 I— .2 0 0 S p e c ific atio n s: |
OCR Scan |
MIL-STD-202G. UL94-V-0 E151556 4-125TC 102mm) 100KHz 10MHz 30MHz 50MHz 100MHz | |
47 16 tContextual Info: MULTILAYER CERAMIC CAPACITORS SMD * Multilayer ceramic capacitors MLCC are manufactured by suspending ceramic powders in liquid and casting into a thin green sheet from 20um in thickness to 5um or thinner. * Metal electrodes are sieved printed onto green sheets which are later stacked to form a laminated are structure. The metal |
Original |
25max 47 16 t | |
|
|||
DIODE 2FL 20U
Abstract: 2FL 20U
|
OCR Scan |
D2FL20U J532-1) DIODE 2FL 20U 2FL 20U | |
he804
Abstract: ati connector HE809 smd diode ED MMSD32032602S-C-xx Microspire MB he807 eurofarad TCN30 MMEE08510804S-C-xx mmfl16016604s-c mmfl16016604s-d
|
Original |
||
diode Marking code v3
Abstract: 2F SMD CODE MARKING D2FL20U ,diode Marking code v3 smd diode marking code v3 smd diode 2F DIODE smd marking CODE WA smd marking code je SMD MARKING CODE vk smd marking code vd
|
OCR Scan |
D2FL20U trr-35ns li50I 56LTI/ j532-1) diode Marking code v3 2F SMD CODE MARKING D2FL20U ,diode Marking code v3 smd diode marking code v3 smd diode 2F DIODE smd marking CODE WA smd marking code je SMD MARKING CODE vk smd marking code vd | |
B82432A1682M
Abstract: B82432-A1824-K 470uH 6A B82432A1472M B82432A1332M B82432-A1684-K B82432A1824K SIMID 02 UKW-DROSSEL B82791-H15-A16
|
Original |
||
SN30SC4
Abstract: D15VBA60 sivb s4vb bridge rectifier rectifier s1wb smd 1f SIVBA20 SMD 741 4 terminal bridge rectifier S4VB D25VB20
|
Original |
M1F60 D1F20 D1N20 DINF60 D2F20 D3F60 D4F60 S2V20 S3V20 D1CS20 SN30SC4 D15VBA60 sivb s4vb bridge rectifier rectifier s1wb smd 1f SIVBA20 SMD 741 4 terminal bridge rectifier S4VB D25VB20 | |
lm5532
Abstract: RC45580 smd diode 1n4148 LM358D3 78L12 ZXCD1000 6V3 100U RC4558D 3 channel audio splitter circuit diagram
|
Original |
ZXCD1000 ZXCD1000 ZXFN1000) lm5532 RC45580 smd diode 1n4148 LM358D3 78L12 6V3 100U RC4558D 3 channel audio splitter circuit diagram | |
lm3580
Abstract: A46 SMD CAPACITOR 470n ne5532 cross LM358D3 78L12 audio splitter, circuit diagram mosfet woofer amplifier schematic diagram of speaker crossover audio amplifier circuit diagram woofer circuit
|
Original |
ZXCD1000 ZXCD1000 ZXFN1000) lm3580 A46 SMD CAPACITOR 470n ne5532 cross LM358D3 78L12 audio splitter, circuit diagram mosfet woofer amplifier schematic diagram of speaker crossover audio amplifier circuit diagram woofer circuit | |
lm3580
Abstract: 1N4148 SMD PACKAGE AUDIO CROSSOVER schematic A4A smd ne5532 cross 2 speakers 1 crossover amplifier pcb A46 SMD ZXFN1000 a46 smd diode RC4558D
|
Original |
ZXCD1000 ZXCD1000 ZXFN1000) -115dB 20kHz lm3580 1N4148 SMD PACKAGE AUDIO CROSSOVER schematic A4A smd ne5532 cross 2 speakers 1 crossover amplifier pcb A46 SMD ZXFN1000 a46 smd diode RC4558D | |
Contextual Info: SMD ESD Protection Diode SMD Diodes Specialist CPDVR083V3U RoHS Device Features IEC61000-4-2 ESD ±15 kV(Contact),±20kV(Air). SOT-383F(VR8) Working voltage: 3.3V 0.086(2.20) 0.079(2.00) Low leakage current. Low operating and clamping voltages. Mechanical data |
Original |
CPDVR083V3U IEC61000-4-2 OT-383F MIL-STD-750 OT-383F QW-A7019 | |
Contextual Info: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDER12V0U-HF RoHS Device Halogen Free 0503/SOD-723F Features 0.053 1.35 0.045(1.15) - Uni-directional ESD protection - Ultra small SMD package:0503. 0.034(0.85) 0.026(0.65) - High component density. Mechanical data |
Original |
CPDER12V0U-HF 0503/SOD-723F 0503/SOD-523F MIL-STD-750, QW-G7029 |