SMA18 Search Results

WJ-A18-1

Abstract: 4582 transistor
Contextual Info: WJ-A18-1 /SMA18-1 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH DYNAMIC RANGE HIGH OUTPUT POWER: +16 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBm (TYP.) LOW NOISE: 3.8 dB (TYP.) Outline Drawings A18-1 Specifications5*

Contextual Info: Cascadable Amplifier 10 to 1000 MHz A181/ SMA181 V3 Features Product Image • HIGH REVERSE ISOLATION: 22 dB TYP. • HIGH OUTPUT POWER: +22 dBm (TYP. • HIGH THIRD ORDER I.P.: +35 dBm (TYP.) Description The A181 RF amplifier is a discrete hybrid design, which uses

RF TRANSISTOR 1.5 GHZ

Abstract: A18-1 CA18-1 SMA18-1
Contextual Info: A18-1/SMA18-1 10 TO 500 MHz CASCADABLE AMPLIFIER • HIGH DYNAMIC RANGE · HIGH OUTPUT POWER: +16 dBm TYP. · HIGH THIRD ORDER I.P.: +30 dBm (TYP.) · LOW NOISE: 3.8 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics

A180

Abstract: CA180 SMA180
Contextual Info: A180 / SMA180 Cascadable Amplifier 10 to 500 MHz Rev. V2 Features Product Image • HIGH REVERSE ISOLATION: 22 dB TYP. • HIGH OUTPUT POWER: +18 dBm (TYP.) Description The A180 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and

A18-1

Abstract: CA18-1 SMA18-1
Contextual Info: Cascadable Amplifier 10 to 1000 MHz A18-1 / SMA18-1 V3 Features • • • • Product Image HIGH DYNAMIC RANGE HIGH OUTPUT POWER: +16 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBM (TYP.) LOW NOISE: 3.8 dB (TYP.) Description The A18-1 RF amplifier is a discrete hybrid design, which uses

Contextual Info: A181/SMA181 10 TO 1000 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: 22 dB TYP. · HIGH OUTPUT POWER: +22 dBm (TYP.) · HIGH THIRD ORDER I.P.: +35 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/02)* Characteristics Typical Frequency

A180

Abstract: CA180 SMA180
Contextual Info: A180/SMA180 10 TO 500 MHz TO-8 CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: 22 dB TYP. · HIGH OUTPUT POWER: +18 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 6/02)* Characteristics Typical Frequency Small Signal Gain (min.) Gain Flatness (max.)

A181

Abstract: CA181 SMA181
Contextual Info: A181/SMA181 10 TO 1000 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: 22 dB TYP. · HIGH OUTPUT POWER: +22 dBm (TYP.) · HIGH THIRD ORDER I.P.: +35 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency

Contextual Info: A180 / SMA180 Cascadable Amplifier 10 to 500 MHz Rev. V2 Features Product Image • HIGH REVERSE ISOLATION: 22 dB TYP. • HIGH OUTPUT POWER: +18 dBm (TYP.) Description The A180 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and

WJ-A18-1

Contextual Info: uuü A181/SMA181 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: 22 dB TYR HIGH OUTPUT POWER: +22 dBm (TYP.) HIGH THIRD ORDER I.P.: +35 dBm (TYP.) Specifications’* Characteristics Frequency (Min.)

CA-180

Abstract: WJ-CA18
Contextual Info: WJ-A18Q/SMA180 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH REVERSE ISOLATION: 22 dB TYP. ♦ HIGH OUTPUT POWER: +18 dBm (TYP.) Outline Drawings Specifications* Characteristics Frequency (Min.) Small Signal Gain (Min.)

Contextual Info: A18-1/SMA18-1 10 TO 1000 MHz TO-8 CASCADABLE AMPLIFIER • HIGH DYNAMIC RANGE · HIGH OUTPUT POWER: +16 dBm TYP. · HIGH THIRD ORDER I.P.: +30 dBm (TYP.) · LOW NOISE: 3.8 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 4/02)* Characteristics

Contextual Info: Cascadable Amplifier 10 to 500 MHz A180 / SMA180 V2 Features Product Image • HIGH REVERSE ISOLATION: 22 dB TYP. • HIGH OUTPUT POWER: +18 dBm (TYP.) Description The A180 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and

BC 148 TRANSISTOR

Abstract: WJ-A18-1 wj 508 coto 1200
Contextual Info: ü j j A18-1/SMA18-1 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH DYNAMIC RANGE HIGH OUTPUT POWER: +16 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBm (TYP.) LOW NOISE: 3.8 dB (TYP.) Outline Drawings A 1 8-1 Specifications’1

SMA181

Abstract: A181 CA181 CA-18-1
Contextual Info: A181 / SMA181 Cascadable Amplifier 10 to 250 MHz Rev. V4 Features Product Image • HIGH REVERSE ISOLATION: 22 dB TYP. • HIGH OUTPUT POWER: +22 dBm (TYP. • HIGH THIRD ORDER I.P.: +35 dBm (TYP.) Description The A181 RF amplifier is a discrete hybrid design, which uses

A18-1

Abstract: CA18-1 SMA18-1 A181 CA18 A18 transistor
Contextual Info: A18-1 / SMA18-1 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features • • • • Product Image HIGH DYNAMIC RANGE HIGH OUTPUT POWER: +16 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBM (TYP.) LOW NOISE: 3.8 dB (TYP.) Description The A18-1 RF amplifier is a discrete hybrid design, which uses

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD98502 NETWORK CONTROLLER The µPD98502 network controller is an LSI for network terminal applications such as ADSL systems. The controller integrates a VR4120A MIPS RISC CPU core, memory interface, PCI, and other network interface

smd code AA5

Abstract: smd code G28 SMD CODE AK7 smd g28 transistor SMD w26 SMA13 DSASW006460 SMD resistors ak24 SMD CODE AK6 smd code AH8
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

P28 E8 smd

Abstract: smd g28 smd transistor ab2 g28 SMD smd diode E17 SMD11 transistor SMD w26 SMA13 G26 SMD SMD23
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD98502 NETWORK CONTROLLER The µPD98502 network controller is an LSI for network terminal applications such as ADSL systems. The controller integrates a VR4120A MIPS RISC CPU core, memory interface, PCI, and other network interface

XORB

Abstract: smd ag2 TAA 611 T12 USB3.0 nec RPE2 Ht1 SMD CODE epc63.10 F010H K30 Y-313 M1-48H
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

smd w04 77

Abstract: A09 N03 smd w06 smd SMD23 W17 SMD smd code W06 SMD-27 smd k02 smd code W04 s1558
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT LAKI µPD98503 COMMUNICATION CONTROLLER LAKI is a high performance controller which can perform TCP/IP and USB protocol stacks or other application system related software. It includes high performance MIPS based 64-bit RISC processor VR4120A CPU core,

SMD23

Abstract: b20 p03 N-Wire T04 83 AC05 nec
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD98501 COMMUNICATION CONTROLLER The µPD98501 is a high performance controller which can perform the protocol conversion between IP Packets and ATM cells, which is especially suitable for ADSL modem and it includes high performance MIPS based 64-bit

RX2C

Abstract: RX1B hd12d rx2b S2065 hd12d datasheet rx2d RX2AP SMA21 rx2cp
Contextual Info: Part Number EV2065 Revision 1.0 - November 18, 1999 EV2065 EVALUATION BOARD Quad Serial Backplane Device with Dual I/O Introduction The S2065 evaluation board provides a flexible platform for verifying the operation of the S2065 Quad Serial Backplane Device with Dual I/O. This document provides information on the evaluation board’s contents. It should be

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD98501 NETWORK CONTROLLER The µPD98501 is a high performance controller which can perform the protocol conversion between IP packets and ATM cells, which is especially suitable for ADSL modem. It includes high performance MIPS based 64-bit