SM 96 DIODE Search Results

Contextual Info: i 19-7085; R e v i; 10/96 y k iy j x iy k i Dual-Channel CardBus and PCMCIA Pow er Sw itches with SM Bus Serial Interface Features Genera! Description _ ♦ Supports Two CardBus Sockets ♦ 1A, 0.08Q Max VY VCC Switch MAX1601 only

J476

Abstract: 2EZ100D
Contextual Info: Zener Regulator Diodes S M A J4761C SM A J4761D 2EZ82D 5 S M A J4762 SM A J4762A S M A J4762C SM A J4762D 2EZ91D 5 S M A J4763 SM A J4763A S M A J4763C S M A J4763D 2EZ100D 5 S M A J4764 S M A J4764A S M A J4764C SM A J4764D 2EZ110D 5 2EZ120D 5 2EZ130D 5 2EZ140D 5

SM 96 diode

Abstract: STH61004A STH61004G STH61005A STH61005G stm siemens Q62702-P3128 Siemens photodiode
Contextual Info: STH61004x STH61005x Target Specification 1300nm DFB Laser in Coaxial Package with SM-Pigtail, High Power • • • • • • Designed for application in high-speed and long-haul fiber-optic networks Laser Diode with Multi-Quantum-Well and gain coupled structure

IRF 1540

Abstract: STH91004A STH91004G STH91005A STH91005G stm siemens
Contextual Info: STH91004x STH91005x Target Specification 1550nm DFB Laser in Coaxial Package with SM-Pigtail, High Power • • • • • • Designed for application in high-speed and long-haul fiber-optic networks Laser Diode with Multi-Quantum-Well and gain coupled structure

STH61008A

Abstract: STH61008G STM-16 gain coupled DFB
Contextual Info: STH61008x Target Specification 1300nm DFB Laser in Coaxial Package with SM-Pigtail, High Power, with optical Isolator for 2,5GBit Application • • • • • • Designed for application in high-speed and longhaule fiber-optic networks Laser Diode with Multi-Quantum-Well and gain

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . SILICON HYPERABRUPT TUNING DIODES The SM V1400 Series o f hyperabrupt varactors offer high capacitance ratios with linear tuning between 2 and 8 volts. The units are available over a broad range junction capacitances, satisfying a large num ber o f broadband applications thru the

ph 41 zener diode

Abstract: J150A 13.8 8w zener diode GHM DIODE marking code SM diode Diode GHM GGR diode sg 82 do-214aB marking ghm J78A
Contextual Info: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage

marking code SM diode

Abstract: GGV diode GGT DIODE marking SM 98 tvs diode sma nu GHM 25 DIODE GHM DIODE ph 41 zener diode ggr 86 176/Diode Zener C 47 pH
Contextual Info: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage

dd 76 N powerblock

Abstract: powerblock dd 82 S 800 powerblock DD 76 N 1200 PB20S
Contextual Info: Fast Diode Modules Type Schnelle Dioden-Module V RRM V Ifrm sm Ifsm ö3dt I f AV m / T c V TO A A A2s A/°C V 10 ms, 10 ms, T"v| max Tvi max ,103 V R SM = VRRm +100V (50Hz) rT m Irm A °c /w Tv,= Tv,= Tv,= 180° el Tvj max Tvi max max -di/dt = sin outline

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . SILICON HYPERABRUPT TUNING DIODES The SMV1400 Series of hyperabrupt varactors offer high capacitance ratios with linear tuning between 2 and 8 volts. The units are available over a broad range junction capacitances, satisfying a large number of broadband applications thru the

d 379

Contextual Info: v C o rp . he diode experts SCOTTSDALE, A Z For more information call: SANTA ANA, CA 602 941-6300 SM 1.4KESDS.O thru SM 1.4KESD 170A SURFACE MOUNT Features 1 Protects S ensitive C ircu its From S h o rt D u ra tio n Fast Rise Tim e Tran sien ts such as Ele ctro -S tatic-D isch a rg e (ESD) or Electrical

bu 3 GDG 125

Abstract: marking CODE smb J36 diode 13.8 8w zener diode DO-214A sma marking sm RG DO-214AA smj58 24 DO-214A bu 450 GDF diode gde 61 81g diode
Contextual Info: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage

SMD 236 DIODE

Contextual Info: K n o x S e m ic o n d u c t o r , I n c SILICON HYPERABRUPT TUNING DIODES The SMV1400 Series o f hyperabrupt varactors offer high capacitance ratios with linear tuning between 2 and 8 volts. The units are available over a broad range junction capacitances, satisfying a large number of broadband applications thru the

f6l20u

Abstract: 1FK70 f6l20 f10l60 18smd 10L20U D6L20U D3L20 30L60
Contextual Info: Super Fast Recovery Diodes High fre q u e n c y re c tify in g S TO -220 Lead type Single Diodes FTO-220 A bsolute M axim um Ratings Type No. V rm lo Conditions Ifsm Electrical C haracteristics [A] [°C] [A] rc] [°C] 25 -5 5 -1 5 0 150 200 1 40 400 0.9

XcxxX

Abstract: sm1628c sM1628 sm4045 SM40-45CXC374 SM04-16CXC190 SM14-21CXC224 SM1628CXC144 SM1421 SM*HXC166
Contextual Info: Fast Recovery Diodes - Capsule Types Product une of WISTCODi A n O IX Y S Com pany Type Vrb« ^FAV @TS=55°C V ^F RMS max @TS=25°C Typ.Fieverse Recovery charge &Tyf . Reverse Recoviïrytime 10ms Tj Max (50% Cho rd) VR<60%Vrhm A A Qra uC trr Vf at lF ^FSM

IN5406 diode

Abstract: B32672P4684K TDK common mode choke film diode s1m c7 diode in5406
Contextual Info: Application Note 1876 Author: Alan Yu ISL6730BEVAL1Z and ISL6730DEVAL1Z: Boost CCM PFC for 300W Universal Input Adaptors Introduction Design Specifications This application note describes the design and implementation of a 390V, 300W, Continuous Conduction Mode CCM Boost

DSWM5

Contextual Info: Microwave Integrated Circuit Switches • GaAs, PIN Diode, & Schottky Diode Technology • Thin-Film MIC Technology • Plug In DIP Style Packages • Flatpack Packages • Connectorized Packages • Full Military Screening Available See Page 320 DAICO INDUSTRIES

m5946

Abstract: 3FS-4A 3FS4A
Contextual Info: Schottky Barrier Diodes High f r e q u e n c y r e c t if y in g IT 0 -2 2 0 1F Single Diodes T O -220 Electrical C haracteristics Absolute Maximum Ratings Cj qi 0ja m ax V r = V rm [m A ] (typ) (m ax) (max) [p F ] [• c / w ] [• c / w ] [tJ /W ] 0 .8

M49C

Abstract: diodes 1N49A 17atm 1n4907 1N4896 1N4896A 1N4897 1N4897A 1N4898 1N4898A
Contextual Info: • 12.8 VOLT NOMINAL ZENER VOLTAGE •+ 5=c 1N 4896 thru ■TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N 4915A • LOW NOISE • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

Contextual Info: MOTOROLA Order this document by M1MA151KT1/D SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the S C -5 9 package which is

Contextual Info: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 TVS Diodes - Surface Mount - 600 Watt Specifications - SMBJ Series Electrical Characteristics ! j | B U \ I P N u a P r t m b e r * I S M B J 5 . 0

diode marking H2

Abstract: AZ MARKING CODE diode marking code 96 DIODE marking 96
Contextual Info: DIODE ARRAYS MicrosemiCorp. y SANTA ANA, CA The diod e experts j / SCOTTSDALE, A Z For more information call: 602 941-6300 Features These p ro d u c ts a re d e sig n e d f o r d a ta lin e p ro te c tio n a t th e P.C. b o a rd level as w e ll as f o r O ih e r a p p lic a tio n s in c lu d in g : cam eras, sm a rt cards, e tc. w h ic h re q u ire

TS802C06

Contextual Info: TS802C06 1OA <§ SCHOTTKY BARRIER DIODE I • O u tlin e D ra w in g Features • • • • Connection Diagram Surface mount device Lo w V f Super high speed switching High reliability by planer design H Applications • High speed power switching ■

Contextual Info: MOTOROLA Order this document by M1MA151WAT1/D SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diodes M1MA151WAT1 M1MA152WAT1 These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the S C -59