SM 71A DIODE Search Results

BUZ71

Abstract: buz71a SM 71A diode BUZ-71A BUZ71 Siliconix
Contextual Info: Tem ic BUZ71/71A Siliconix N-Channel Enhancement-Mode Transistors Product Summary P a rt N um ber V BR DSS 0 0 ri)S(on) (& ) I d (A) BU Z71 50 0.10 14 B U Z 71A 50 0.12 13 D TO-22QAB P o DRAIN connected to TAB U U U ^ G D S S Top View N-Channel M OSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

buz71a

Abstract: A1316-A3 BUZ71 SM 71A diode diode L 2 . 71 sm 71a
Contextual Info: S IE M E N S BUZ 71 BUZ 71 A SIPMOS Power MOS Transistors ^D S = Id = ^ D S o n = • • • • BUZ 71 S2 50 . . 60 V 13 . . 14 A 0.1 . .0 .1 2 N channel Enhancem ent mode A valanche-proof Package: TO -220 A B 1) Type Ordering code BUZ 71 C 67078-S 1 31 6-A 2

Contextual Info: PD - 95263 IRLBA3803PbF l l l l l l l Logic-Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Fully Avalanche Rated Purchase IRLBA3803/P for solder plated option. Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS on = 0.005Ω

Contextual Info: PD - 95263A IRLBA3803PbF l l l l l l Logic-Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS on = 0.005Ω G ID = 179A† S Description Fifth Generation HEXFETs from International Rectifier utilize advanced

SM 71A diode

Contextual Info: PD - 95263A IRLBA3803PbF l l l l l l Logic-Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS on = 0.005Ω G ID = 179A† S Description Fifth Generation HEXFETs from International Rectifier utilize advanced

IRL3803

Contextual Info: PD - 91841A IRLBA3803/P ● ● ● ● ● HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 0.005Ω G Description ID = 179A† Fifth Generation HEXFETs from International Rectifier utilize

Contextual Info: PD - 91319E IRL3803S/L l l l l l l l Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3803S Low-profile through-hole (IRL3803L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 30V RDS(on) = 0.006Ω

AN-994

Abstract: IRL3803 IRL3803L IRL3803S
Contextual Info: PD - 91319E IRL3803S/L l l l l l l l Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3803S Low-profile through-hole (IRL3803L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 30V RDS(on) = 0.006Ω

SM 71A diode

Abstract: AN-994 IRL3803 IRL3803L IRL3803S 24v 20W Driver
Contextual Info: PD - 91319E IRL3803S/L l l l l l l l Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3803S Low-profile through-hole (IRL3803L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 30V RDS(on) = 0.006Ω

IRLBA

Abstract: ER900
Contextual Info: PD - 91841 IRLBA3803/P ● ● ● ● ● HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 0.005Ω G Description ID = 179A† Fifth Generation HEXFETs from International Rectifier utilize

C555

Contextual Info: PD - 9.1319D International IQR Rectifier IRL3803S/L HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3803S Low-profile through-hole (IRL3803L) 175°C Operating Temperature Fast Switching

SM 71A diode

Abstract: IRL3803 IRLBA3803
Contextual Info: PD - 91841C IRLBA3803 HEXFET Power MOSFET ● ● ● ● ● ● Logic-Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Fully Avalanche Rated Purchase IRLBA3803/P for solder plated option. D VDSS = 30V RDS on = 0.005Ω

C1756

Abstract: 1N8146 A1930A a1026a 1n8442 S488 GG1767 C1756C A1930
Contextual Info: c t i vo n : CHIP DIODES TO O R D E R A D D " C H IP " TUNING DIODES HIGH Q FOR MANY Ü H F V H F USES L u * i NO. HYPERABRUPT HIGH 0 ABRUPT GOOD 0 R A T IO M # C 2/C30 mm/max 88 M H i mm R A T IO C 2 /C N m m /m ai TYPE NO 04 # HO m in / m * 04 • M MM/

Contextual Info: PD - 9.1320B International IG R Rectifier IRLI3803 HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm

diode sg 71A

Abstract: 50M60JN SM 71A diode
Contextual Info: o D O S A d va n ced P o w er Te c h n o l o g y 8 APT50M60JN 500V 71A 0.060Q 9 Û "U L Recognized" File No. E145592 S) ISOTOP POWER MOS IV( SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS *D *DM’ ’lM

Contextual Info: International IQ R Rectifier P D - 9.1644 IRL1004S/L PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Surface Mount IRL1004S Low-profile through-hole (IRL1004L) Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating

hc 284

Abstract: SM 71A diode BFC18 ls 3120
Contextual Info: Illl Illl BFC18 SEME LAB 4TH GENERATION MOSFET SOT-227 Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 11 6 (0 4 6 3 ) 12 2 ( 0 48 01 I 9 (0 3 5 0 } 9 6 (0 3 7 6 ! Hex N ut M 4 (4 placas) F- i i Y i i % o ^ 0 7 5 10.0305

Contextual Info: M PIC16C7X ic r o c h ip 8-Bit CMOS Microcontrollers with A/D Converter Devices included in this data sheet: • Low-power, high-speed CMOS EPROM technology PIC16C70 • Fully static design PIC16C71 • Wide operating voltage range: 3.0V to 6.0V PIC16C71A

Contextual Info: A d v a n ced P o w er Te c h n o l o g y APT50M60JN 500V 71A 0.060Q yiiX"UL Recognized" File No. E145592 S clHïlBHïïJïP ISOTOP* POWER MOS IV( AGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS Parameter Drain-Source Voltage

BUZ71

Abstract: buz71a
Contextual Info: SIEM ENS SIPMOS Power T ransistors • N channel • Enhancement mode • Avalanche-rated Type ^ DS Id Tc BUZ 71 50 V 14 A 28 °C 0.10 £2 BUZ 71 A 50 V 13 A ^25 "C 0.12 £2 BUZ 71 S2 60 V 14 A 28 'C 0.10 £2 I ^DS on Maximum Ratings Parameter Continuous drain current

buz7l

Abstract: BUZ 140 L DIODE BUZ BUZ71S2 C160 C67078-S1316-A2 C67078-S1316-A3 C67078-S1316-A9 71A50 BUZ71 Siemens
Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 71 BUZ 71 A, BUZ 71 S2 • N channel • Enhancement mode • Avalanche-rated Type V„ Tc ^DS on Package 1> Ordering Code BUZ 71 50 V 14 A 28 *C 0.10 Q TO-220 AB C67078-S1316-A2 BUZ 71 A 50 V 13 A 25 'C 0.12 Q TO-220 AB

Contextual Info: MITSUBISHI OPTICAL DEVICES FU-632SEA-3MxxA/FU-632SEA-6MxxA _1.55 }im EAM/DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL(WDM) DESCRIPTION Module type FU-832SEA-6MxxA is an electroaborplion modulator integrated with 1.55um DF8-LD module with single mode optical fiber.

LS 14500

Contextual Info: A d van ced P o w er Te c h n o l o g y " APT50M60JNF 500V 71A 0.060Í2 ISOTOP1 ,S M "U L Recognized" File No. E145592 S POWER MOS IVe SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: ADVANCED PO W ER Tec h n o lo g y* OD APT50M60JN ôs 500V 71A 0.060Q "UL Recognized" File No. E145592 S ISOTOP* POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol Parameter APT 50M60JN