SLAB RESISTORS Search Results

Contextual Info: SERIES 500SP NON-INDUCTIVE BULK CERAMIC SLAB RESISTORS KANTHAL GLOBAR Series 500SP Non-Inductive Bulk Ceramic Slab Resistors provide high power and energy dissipation in a compact size. Proprietary bulk ceramic “SP” material is used in a simple, efficient design that permits energy to be uniformly absorbed throughout the

Contextual Info: KANTHAL GLOBAR A S a n d v ik C o m p a n y SERIES 500SP NON-INDUCTIVE BULK CERAMIC SLAB RESISTORS Series 500SP Non-Inductive Bulk Ceramic Slab Resistors from CESIWID provide high power and energy dissipation in a compact size. Proprietary bulk ceramic “SP” material is used in a simple, yet

Contextual Info: KANTHAL GLOBAR SERIES 500SP NON-INDUCTIVE BULK CERAMIC SLAB RESISTORS CESIS00017 Series 500SP Non-Inductive Bulk Ceramic Slab Resistors provide high power and energy dissipation in a compact size. Proprietary bulk ceramic “SP” material is used in a simple, efficient design that permits energy to be uniformly absorbed throughout the

Contextual Info: SERIES 500SP NON-INDUCTIVE BULK CERAMIC SLAB RESISTORS KANTHAL GLOBAR Series 500SP Non-Inductive Bulk Ceramic Slab Resistors provide high power and energy dissipation in a compact size. Proprietary bulk ceramic “SP” material is used in a simple, efficient design that permits energy to be uniformly absorbed throughout the

KANTHAL GLOBAR

Abstract: kanthal kanthal data sheet 502SP 504SP101KG1
Contextual Info: SERIES 500SP NON-INDUCTIVE BULK CERAMIC SLAB RESISTORS KANTHAL GLOBAR Series 500SP Non-Inductive Bulk Ceramic Slab Resistors provide high power and energy dissipation in a compact size. Proprietary bulk ceramic “SP” material is used in a simple, efficient design that permits energy to be uniformly absorbed throughout the

KA555

Abstract: KA555D
Contextual Info: KA555/I SINGLE TIMER SINGLE TIMER The KA55S/I Is a highly slab « controller capable of producing accurals timing pulses. W ith monostable operation, the time delay Is controlled by one external and one capacitor. With astable operation, the frequency and duty cycle are accurately controlled with two external resistors and

Contextual Info: KANTHAL Globar Non-Inductive GLOBAR Bulk Ceramic Power Resistors A Sandvik Company formerly Cesiwid Non-inductive bulk ceramic construction for uniform distribution of energy throughout resistor body. No film or wire to fail. Choose Type SP for great A-C power

Slab resistors

Abstract: 503AS KANTHAL GLOBAR kanthal
Contextual Info: Series 500AS Resistance Range Average Power @ Peak* Energy @ Peak* Voltage* Type Length L (Ohms) 40°C Amb. (Watts) 40°C Amb. (Joules) (Volts) 502AS 2" (51 mm) 5 –1,200 12 1,500 8,500 Resistor Weight (Grams) 16 503AS 3" (76 mm) 9 – 2,200 18 2,700 16,000

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temperature profile

LTE21009R

Abstract: SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temperature profile

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LVE21050R PINNING - SOT445A FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN DESCRIPTION 1 • Self-aligned process entirely ion implanted

Contextual Info: LTE4002S Maintenance type - not for new designs J _ MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor fo r use in common-emi ter class-A linear amplifiers up :o 4 GHz. Diffused em itter ballasting resistors, self aligni d process entirely ion implantec end gold sandwich

12C508

Abstract: P12C508 pic12c508 source 3004 diode 1N4734A PIC12C508 MPASM code macro digital counter sensor ZENER DIODE 47
Contextual Info: Sensor Interface Analog Input Through One Digital Pin Author: Kirill Yelizarov V. Moscow Power Engineering Institute Moscow, Russia email: tihonov@srv-vmss.mpei.ac.ru OVERVIEW Since most detectors are analog type, an analog to digital converter ADC is needed to measure its data by

PLB16006U

Contextual Info: 3 3 ^ Philips Semiconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL FEATURES Input matching cell allows an easier design of circuits Diffused emitter ballasting resistors providing excellent current sharing and withstanding

K 3053 TRANSISTOR

Abstract: k 246 transistor
Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 p,s pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness

erie capacitor

Abstract: PTB23002U SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer

eia 3216-12

Abstract: multilayer ceramic capacitor capacitor 1000uf electrolyte NbO2 120C avx tantalum capacitor 6032 weibull test data
Contextual Info: Low ESR and Low Profile Technology on Niobium Oxide S. Zedníček, Z. Sita, T.Zedníček AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 467 558 111 Fax: +420 467 558 128 C. McCracken, W. A. Millman. AVX Limited, Long Road, Paignton,

Al2O3 heat transfer coefficient

Abstract: 2512 resistor
Contextual Info: Understanding The Basic Thermal Properties Of SMT Devices By Scott B Durgin Principal Engineer International Manufacturing Services, Inc. IMS Introduction Ensuring optimal RF performance (that is, mechanical, thermal and electrical performance) of a surface-mount technology (SMT) ceramic device requires the careful

transistor Common Base amplifier

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES PZB16035U PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 us pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness

Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 us pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness

PZ1418B15U

Abstract: PZ1418B30U SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PZ1418B15U FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES PZ1418B15U PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

Contextual Info: Philips Semiconductors Product specification Microwave power transistor PLB16004U FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR Microwave performance up to T mb = 25 °C in a common base class C