SLA100X Search Results

230v 5v level shifter

Abstract: 5v - 15v level shifter SLA9000F OB21 BC21 SLA115X SLA121X SLA132X SLA147X SLA159X
Contextual Info: PF495-07 SLA100X Series Low Voltage Gate Array ge lta o V n w tio Lo pera cts O rodu P ●Low Power Silicon Gate CMOS ●Low Operating Voltages ●CMOS-Compatible I/O ●Low Voltage Operational Oscillator on Chip • DESCRIPTION The SLA100X series gate arrays are fabricated utilizing our low threshold CMOS technology. Six devices, with

MF931

Abstract: PF495 SSL20 PF752 PF515 PF516
Contextual Info: -7 ASIC Documentation •Device-related documents Gate arrays Part number Design guide Datasheet Japanese English SLA35000 series PF840 PF839 SLA30000 series PF793 PF757 SLA4Q000 series SLA9000F series SLA100X series PF472 PF495 Cell library Japanese English

Contextual Info: S- M 0 S S Y S T E M S INC SbE T> • 7 t13SliOti D Ü D l H b ö SLA100X 05^ S e rie s /-V -2 CMOS LOW VOLTAGE GATE ARRAY • • • • Low-Power Silicon Gate CMOS Low Operating Voltages CMOS-Compatible I/O Low Voltage Operational Oscillator on Chip ■ DESCRIPTION

SLA9000F

Abstract: SSL4000
Contextual Info: Section ASIC ASICs SLA50000 SLA40000 series Gate arrays High speed high density Sea-of-gates type High drivability rLow I k vo ilaa e I rLow SLA35000 series SLA30000 series SLA9000F series Low voltage • SLA100X series SSL50000 series* Embedded arrays High speed

level shifter . CMOS to TTL

Abstract: SLA913F sla904f
Contextual Info: -1 I Gate Arrays •High-speed, high-density lineup SLA9000F series ! SLA9O0OF swi«s Series • l . O ^ m silicon gate CMOS with double layer metal. • H ig h speed operation Internal gate delay tpd = 0.4ns at 5.0V, 2-input Power- NAND, typical . • U s a b le with simplified level shifter.

Transistor TT 2140

Abstract: transistor tt 2170 em transistor tt 2170 transistor tt 2190 em TH 2190 Transistor TRANSISTOR TT 2190 ssc2200
Contextual Info: EPSON _ SSC2000 Series Standard Cell • • • • Built-in Analog Circuit Internal Two Power Supplies Level Shifter Wide Operating Voltage: 0.9 V to 6.0 V Up to 11,000 gates I DESCRIPTION T he SS C 2000 series is a C M O S standard cell w ith low -threshold m anufacturing process providing low voltage

tr3 230v

Contextual Info: EPSON SLA1OOX Series Low Voltage Gate Array •L o w Power Silicon Gate CMOS •L o w Operating Voltages •CMOS-Compatible I/O •L o w Voltage Operational Oscillator on Chip • DESCRIPTION The SLA1 OOX series gate arrays are fabricated utilizing our low threshold CMOS technology. Six devices, with

level shifter . CMOS to TTL

Abstract: msi cr 430 SSC2000 ttl inverter operation PF516
Contextual Info: EPSON P F 5 1 6 -0 7 SSC2000 Series Standard Cell 'Built-in Analog Circuit 'Internal Two Power Supplies Level Shifter 'W ide Operating Voltage: 0.9 V to 6.0 V 'U p to 11,000 gates • DESCRIPTION The S S C 2000 series is a C M O S standard cell w ith low -threshold m anufacturing process providing low voltage

944F

Abstract: TAB-QFP10 QFP4 904f SLA9000F 441T 144 pin qfp
Contextual Info: SLA40000 seríes Available as of November, 1996 Part No. Double-layer metal Triple-teyer metal of pins Package code Pin length subcode 4078 4115 4162 4239 4318 4411 Raw gates 28.260 46.864 78,600 115.388 162j864 318,308 411,257 Usable gates 22.026 35,370 51,924

EPSON Floppy Drive

Abstract: MUSIC GENERATOR
Contextual Info: Contents Order Information- 6 Package Information — - 7 Package Configurations- 9