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Infineon Technologies AG AUIRGSL30B60K AUIRGSL30B60K, 78 A 600 V, 30KHZ, 3-PIN TO-262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	AUIRGSL30B60K	Bulk			10	1 - 10 $15.68 100 $15.68 1000 $15.68 10000 $15.68	Get Quote
Rochester Electronics	AUIRGSL30B60K		1,150		1	1 - 10 - 100 $2.03 1000 $1.82 10000 $1.71	Buy Now
Infineon Technologies AG IRGSL30B60KPBF 600V ULTRAFAST 10-30 KHZ IGBT IN A TO-262 PACKAGE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IRGSL30B60KPBF	Bulk			10,000	1 - 10 - 100 - 1000 - 10000 $3.31	Get Quote
International Rectifier AUIRGSL30B60K Trans IGBT Chip N-CH 600V 78A 370W Automotive AEC-Q101 3-Pin(3+Tab) TO-262 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	AUIRGSL30B60K		100		1	1 $3.58 10 $2.32 100 $1.68 1000 $1.68 10000 $1.68	Buy Now
Rochester Electronics	AUIRGSL30B60K		8,318		1	1 - 10 - 100 $2.03 1000 $1.82 10000 $1.71	Buy Now
ComSIT USA	AUIRGSL30B60K		50			1 - 10 - 100 - 1000 - 10000 -	Get Quote
International Rectifier IRGSL30B60KPBF Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IRGSL30B60KPBF		2,382		1	1 - 10 - 100 $1.54 1000 $1.28 10000 $1.14	Buy Now
ComSIT USA	IRGSL30B60KPBF		5,300			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SL30B60K Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
irf 1830 Abstract: 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K Contextual Info: PD - 94799A IRGB30B60K IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	4799a irgb30b60k irgs30b60k irgsl30b60k +9o-220ab o-262 an-994 irf 1830 1085 ct 600v 30a igbt transistor d 1785 irf 44 n c-150	PDF
Contextual Info: PD - 94799A IRGB30B60K IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	4799a irgb30b60k irgs30b60k irgsl30b60k +3o-220ab o-262 an-994	PDF
Contextual Info: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF SL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA	Original	irgb30b60kpbf irgs30b60kpbf irgsl30b60kpbf o-220ab +2o-262 an-994	PDF
AN-994 Abstract: C-150 IRGSL30B60K Contextual Info: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF SL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA	Original	irgb30b60kpbf irgs30b60kpbf irgsl30b60kpbf o-220ab +4o-262 an-994 c-150 irgsl30b60k	PDF
SL30B60K Abstract: C-150 IRF530S IRGS30B60K IRGSL30B60K IRL3103L wf-3 Contextual Info: PD - 94741 IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 150°C.	Original	irgs30b60k irgsl30b60k o-262 an-994 +5sl30b60k c-150 irf530s irl3103l wf-3	PDF
Contextual Info: PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • • • • • • • Low V CE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient	Original	auirgs30b60k auirgsl30b60k o-262 auirgsl30b60knsible	PDF
irf 1830 Abstract: C-150 IRF1010 IRF530S IRGB30B60K IRGS30B60K IRGSL30B60K Contextual Info: PD - 94799 IRGB30B60K IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	irgb30b60k irgs30b60k irgsl30b60k o-220ab +6o-262 an-994 irf 1830 c-150 irf1010 irf530s	PDF
IGBT 4000V Abstract: AN-994 C-150 AUIRGSL30B60K AUIRGS30B60K AUGS30B60K IGBT driver 4000V Contextual Info: PD - 96334 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR AUIRGS30B60K SL30B60K C VCES = 600V Features • • • • • • • Low V CE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient	Original	auirgs30b60k auirgsl30b60k o-262 igbt 4000v +4an-994 c-150 augs30b60k igbt driver 4000v	PDF
Contextual Info: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF SL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA	Original	irgb30b60kpbf irgs30b60kpbf irgsl30b60kpbf o-220ab +2o-262 an-994	PDF
AN-994 Abstract: C-150 IRGB30B60K IRGS30B60K IRGSL30B60K Contextual Info: PD - 94799A IRGB30B60K IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	4799a irgb30b60k irgs30b60k irgsl30b60k +4o-220ab o-262 an-994 c-150	PDF