SKM100GB12T4 Search Results
SKM100GB12T4 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SKM100GB12T4 |
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IGBT4 Modules | Original | 458.32KB | 5 | ||
| SKM100GB12T4G |
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IGBT4 Modules | Original | 404.22KB | 5 |
SKM100GB12T4 Price and Stock
SEMIKRON SKM100GB12T4Igbt Array & Module Transistor, Dual N Channel, 160 A, 1.8 V, 1.2 Kv, Module Rohs Compliant: Yes |Semikron SKM100GB12T4 |
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SKM100GB12T4 | Bulk | 1 |
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SKM100GB12T4 | 1 |
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SKM100GB12T4 | 21 |
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SKM100GB12T4 | 1,840 |
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SEMIKRON SKM100GB12T4GIgbt Module, Dual, 1.2Kv, 154A; Continuous Collector Current:154A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKM100GB12T4G |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SKM100GB12T4G | Bulk | 12 |
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SKM100GB12T4G | Bulk | 1 |
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SKM100GB12T4G | 1 |
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SKM100GB12T4G | 1,554 |
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SEMIKRON SKM100GB12T4G 22892030Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 118A |
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SKM100GB12T4G 22892030 | 1 |
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SEMIKRON SKM100GB12T4WPOWER IGBT TRANSISTOR |
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SKM100GB12T4W | 1 |
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SKM100GB12T4 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: SKM100GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 154 A Tc = 80 °C 118 A 100 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SKM100GB12T4G | |
SKM100GB12T4Contextual Info: SKM100GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 121 |
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SKM100GB12T4 SKM100GB12T4 | |
SKM100GB12T4GContextual Info: SKM100GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 154 A Tc = 80 °C 118 A 100 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SKM100GB12T4G Appl2009 SKM100GB12T4G | |
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Contextual Info: SKM100GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules SKM100GB12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V |
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SKM100GB12T4 | |
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Contextual Info: SKM100GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 121 |
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SKM100GB12T4 swi009 | |
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Contextual Info: SKM100GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 154 A Tc = 80 °C 118 A 100 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM100GB12T4G VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V |
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SKM100GB12T4G |