SK860 Search Results

Contextual Info: Doc No. TT4-EA-14462 Revision. 3 Product Standards MOS FET SK8603160L SK8603160L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 16 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 3.3 m  (VGS = 4.5 V)

14538

Contextual Info: Doc No. TT4-EA-14538 Revision. 2 Product Standards MOS FET SK8603300L SK8603300L Silicon N-channel MOSFET with Schottky Barrier Diode Unit : mm 5.1 4.9 For Load-switching / For DC-DC Converter 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 30 5.9 6.15

Contextual Info: Doc No. TT4-EA-14216 Revision. 3 Product Standards MOS FET SK8603180L SK8603180L Silicon N-channel MOSFET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 18 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 6.7 m  (VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14213 Revision. 3 Product Standards MOS FET SK8603150L SK8603150L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 15 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 2.5 m  (VGS = 4.5 V)

SK860

Abstract: SK-840 sk840 SK880 skk8 SK830 SK850 SK820 SK84 SK835
Contextual Info: SR820 thru SR860 SK820 thru SK860 MINIATURE SCHOTTKY BARRIER RECTIFIER CHENG- YI ELECTRONIC VOLTAGE RANGE 20 TO 80 Volts CURRENT 8.0 Amperes TO-220AC FEATURES Low switching noise Low forward voltage drop Low thermal resistance High current capability High surge capability

Contextual Info: Doc No. TT4-EA-14211 Revision. 4 Product Standards MOS FET SK8603190L SK8603190L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 19 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 10 m  (VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14480 Revision. 2 Product Standards MOS FET SK8603170L SK8603170L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 17 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 3.9 m  (VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14461 Revision. 3 Product Standards MOS FET SK8603140L SK8603140L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 14 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 1.8 m  (VGS = 4.5 V)

SKFM860Y-D

Abstract: 20V-100V SK840Y sk840
Contextual Info: Formosa MS Chip Schottky Barrier Rectifier SKFM820Y-D THRU SKFM8100Y-D List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Schottky Barrier Rectifier SKFM820Y-D THRU SKFM8100Y-D List List. 1 Package outline. 2

FR11FP

Abstract: sk8603
Contextual Info: POSITRONIC INDUSTRIES BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK. POSITRONIC INDUSTRIES ASSUMES NO RESPONSIBILITY FOR RESULTS OBTAINED OR DAMAGES

smd 0y

Contextual Info: Formosa MS SMD Schottky Barrier Rectifier SKFM820Y-D THRU SKFM8100Y-D List List. 1 Package outline. 2

Contextual Info: Formosa MS Chip Schottky Barrier Rectifier SKFM820Y-D THRU SKFM8100Y-D List List. 1 Package outline. 2

MN864779

Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
Contextual Info: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.

SK850305

Abstract: SK860301 SK850306 SK840303 DD0001
Contextual Info: Industry low On-resistance and high efficient devices Nch Power MOSFET’s for DC-DC converter „ Overview These MOSFET’s are most suitable for DC-DC converter circuits, featuring the industry’s lowest On-resistance by Panasonic’s ultra fine processing technology. Fit in a built-in heat sink and power package HSO8, HSSO8 , these MOSFET’s will contribute

Contextual Info: THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO POSITRONIC AND ITS SUBSIDIARIES. POSITRONIC BELIEVES THE DATAON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK. POSITRONIC ASSUMES NO RESPONSIBILITY FOR

0y marking

Abstract: 8.0A SCHOTTKY BARRIER RECTIFIERS
Contextual Info: SKFM840Y-D FM120-M+ WILLAS THRU THRU 8.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 100V 1.0A SURFACE MOUNT SCHOTTKY BARRIER DPAK RECTIFIERS PACKAGE -20V- 200V SKFM8100Y-D FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

Contextual Info: Formosa MS Chip Schottky Barrier Rectifier SKFM820Y-D THRU SKFM8100Y-D List List. 1 Package outline. 2