SJ 35 DIODE Search Results

FCA*35n60

Abstract: FCA35n60
Contextual Info: FCA35N60 N-Channel SuperFET MOSFET 600 V, 35 A, 98 mΩ Features Description • 650V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology

diode 1ss

Abstract: 1SS380 Sj 35 diode digram Diode SJ Diode SJ 14
Contextual Info: 1SS 380 M axim um Ratings Rating Sj- m hoi Va hie Unit 40 Vdc Peak Reverse Voltage DC Reverse Voltage VR 35 Vdc Mean Rectifying C urrent lo 100 m Adc IFM 225 mAdc Isurge 400 mAdc Junction Tem perature Tj 125 nc Storage Temperature Tstfc •55 to + 150 "c Peak Forward C urrent

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

1n4109-1

Abstract: zener diode 10 sv
Contextual Info: 1N4100-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX SS TECHNICAL DATA DATASHEET 5095, Rev A.1 Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4100-1/UR ‐1

NS1000 n

Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

TRK 1703

Abstract: 74124 741244 tfk 223 18 BZX BZX 5.1
Contextual Info: ' w B Z X 5 5 / C . . . O Silizium-Epitaxial-Planar-Z-Dioden Silicon epitaxial planar Z diodes Anwendung: Spannungsstabilisierung Applications: Voltage stabilisation Besondere Merkmale: • • • • • Scharfer Abbruch der Sperrkennlinie Niedriges Sperrstrom niveau

2sa525

Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Diode SJ

Abstract: LR35579 Diode SJ 12 Sj 35 diode Diode SJ 9 Diode SJ 14 E45026 Transistor SJ Sj diode
Contextual Info: SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES • FEATURES ● ● ● ● ● UL, CSA recognized Extremely small and light weight —Size: 10.0 W x 20.2 (L) × 12.8 (H) mm —Weight: approximately 5.5g High reliability, long life and maintenance free

A1381 transistor

Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

DIODE SJ 98

Abstract: CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

takamisawa relay

Abstract: takamisawa takamisawa relay 12 takamisawa 24 takamisawa JY Diode SJ takamisawa relay sj takamisawa relay jy takamisawa relay 5 LR35579
Contextual Info: FUJITSU TAKAMISAWA COMPONENT CATALOG SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES • FEATURES ● ● ● ● ● UL, CSA recognized Extremely small and light weight —Size: 10.0 W x 20.2 (L) × 12.8 (H) mm —Weight: approximately 5.5g High reliability, long life and maintenance free

THC-4413

Abstract: sj 2907 4148 diode diode st 4148 TRANSISTOR 4148 THC-2894 THC-5818 THC-2369 THC-2369A THC-2945
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 1 0 0 % Probed Parameters TYPE D E S C R IP T IO N BVoo M in . Ic V o lts @ (mA) B V cto M in . Ic V o lts @ (mA) M jn. V o lts B V ebo *5 0 1 50 @ Ic

Contextual Info: SCHOTTKY RECTIFIER DIODES, MODULE, DUAL M a x im u m IS f P a rt N um ber '•ptif'!'*!? t. A C P U 2035 GPT12040 120 lis lllliiiil CPT12050 mm Peak (a v e rs e V e tte g e T ( C | P IV 140 P e a k F o rw a rd M a x im u m M a x im u m S u r g e C u r r e n t F w d V o ltag e

Contextual Info: $ -i K /D iod es RLS-71 /RLS-72/RLS-73 RLS-71 / RLS-7 2 /RLS-7 3 Silicon Epitaxial Planar High-Speed Switching Leadless Diodes • • ^ ^ •rj'jiO /D im e n s io n s Unit : mm 2) (trr= 2 n s T y p .)? £ > 3 o 3) 7:— ‘N -A Sfc. 4) • Features 1) High relia bility.

Contextual Info: Doc No. TT4-EA-11555 Revision. 3 Product Standards Zener Diode DZ2J1300L DZ2J1300L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

Sj 35 diode

Contextual Info: 2SK3608-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)

Contextual Info: 2SK3650-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply

transistor A431

Abstract: CA3036 a106 transistor A431 transistor d16P4 4JD12X009 A431 BFR14 MA3232 GI3793
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

NA42

Contextual Info: 1SV303 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 303 CATV TUNING • • • U nit in mm High Capacitance Ratio : C%sj! C2 5 V = 17.5 Typ. Low Series Resistance : rs = 1.05Q (Typ.) Useful for Small Size Tuner.

Contextual Info: u *-f7 P -n y 4 >21 U tipe Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D10LC20UR Case : ITO-220 u,üt :mm 200V 10A • trr 3 5 n s • 7 J IÆ - J U K •S R B S m • 7 U - 7 1 W J I/ •mm. OA, psBfl •ass. a» , fa RATINGS Absolute Maximum Ratings

Contextual Info: 2SK1925 AP A d v a n c e d P e rfo rm a n c e Series V dss = 6 0 0 V N Channel Power M OSFET 'I >4314 F e a tu re s • Low ON resistance. • Very high-speed switching. • High-speed diode ( tr r = 150ns). A b so lu te M axim um R a tin g s a tT a = 25°C

Sj 47 diode

Abstract: power supply 100v 30a schematic
Contextual Info: 2SK3646-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)

2SK3674-01L

Abstract: DIODE SJ 66
Contextual Info: 2SK3674-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply

Sj 47 diode

Abstract: Diode SJ 62 a
Contextual Info: 2SK3600-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)