SJ 1A0 Search Results

Contextual Info: 10 la x x x x ] NOTES PULL OUT DIRECTION S f f iP R f f lW S lX X l S D H E a# psTau RE DETAILED DIMENSION, SEE SALES DRAWING. fflcEiSlm ° 1A00 jS /U —ID NUMBER OR CONNECTORS : 1A0DPCS/REEL u-K x-XK a lead tape len g th N x X X - X 3 S fS C X X X /X X O

FST3244

Abstract: FST3244MTC FST3244QSC FST3244WM MO-137 MQA20 MS-013 MTC20
Contextual Info: Revised May 1999 S E M I C O N D U C T O R TM FST3244 Octal Bus Switch General Description Features The Fairchild Switch FST3244 provides 8-bits of high­ speed CMOS TTL-compatible bus switching in a standard ’244 pin-out. The low on resistance of the switch allows

Contextual Info: 2SD1766 h~7 > y Z $ / T ransistors NPN y ' J ^ > b z ? > ' s Z 2 4, ^ 3 *illli ffl/Meclium Power Amp. 2SD 1766 Epitaxial Planar NPN Silicon Transistor • ^ K T liill/D im e n s io n s U n it: mm • 1) =l P c = 2 W T '* S (40X i .6±0.1 1^ i'-5-cT| .5

BY228ph

Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE

sj 1a0 diode

Contextual Info: Philips Semiconductors Product specification 3.3V 16-bit transceiver with 30Ì2 termination resistors 3-State 74LVT162245B FEATURES DESCRIPTION • 16-bit bidirectional bus interface The 74LVT162245B is a high-performance BiCMOS product designed for V q c operation at 3.3V.

transistor ai 757

Contextual Info: ^ June 1998 PRELIMINARY M icro Linear ML65F16241 16-Bit Buffer/Line Driver with 3-State Outputs GENERAL DESCRIPTION FEATURES The ML65F16241 is a BiCMOS, 16-bit buffer/line driver with 3-state outputs. This device was specifically designed for high speed bus applications. Its 16 channels support

1A7 transistor

Contextual Info: June 1998 PRELIMINARY ^Ék Micro Linear ML65F16245 16-Bit Bidirectional Transceiver with 3-State Outputs GENERAL DESCRIPTION FEATURES The ML65F16245 is a BiCMOS, non-inverting 16-bit transceiver with 3-state outputs. This device was specifically designed for high speed bus applications. Its

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

Contextual Info: O K I Semiconductor MSM514 4 1 OA/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE WRITE PER BIT MODE TYPE DESCRIPTION The MSM514410A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514400A/AL is OKI's CMOS silicon gate process technology.

sj 1a0 diode

Abstract: 4 bit even and odd parity checker Diode 16 SJ 1a0
Contextual Info: Philips Semiconductors Product specification 16-bit latch transceiver with 8-bit parity generator/checker 3-State FEATURES 74ABT16899 74ABTH16899 Parity error checking of the A and B bus latches is continuously provided with fc-HHA and ERRB, even with both buses In 3-State.

KM93C56

Abstract: KM93C56V KM93C66 KM93C56/KM93C66
Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E D B 7Tb4m2 KM93C56/KM93C66 OOlböSfl Ö71 CMOS EEPROM 2K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Low power consumption — Active: 3 mA TTL — Standby: 250 tiA (TTL)

JEDEC-32-PIN

Abstract: A103 A114 CECS bmw options ms LX59CF2010 2S1427
Contextual Info: PRELIMINARY LINVEX TECHNOLOGY. CORP._ LX59CF2010 256K x 8 Bit FLASH and 128K x 8 Bit SRAM Low Voltage Combo Memory FEATURES GENERAL DESCRIPTION • • • The LX59CF2010 is a combination memory chip that consists of 2 Megabit FLASH Memory organized as 256K words by 8 bits and a IM egabit

kb 7k1

Abstract: 5a07 XIFG Y144 LC7870NE XOUT23 LSISS 64KX4 ch9i LC7867E
Contextual Info: * S 2t tÿ -MM ' mü m Sf 44 04 SI 18 u< &i 9t ü r¡ 9 i=F 0' è 11 c « ir m i# S n Bd H m O «t i » <? m •4 Q 5Ì1 }, ni «H â ô i î ftt ÏE c* tf- St 8 8 t d c ffi c # t i¥ îî s - a S iu d W A SU rs m » g. H a » * Ee □ C 9 Î " 9tt » Si !

Contextual Info: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs

F16 - 100 HIP

Abstract: 58F1001
Contextual Info: TENTATIVE DATA TC58F1001P/F 131,072WORD x 8BIT CMOS FLASH E2 PROM DESCRIPTION T he T C 5 8 F 1 0 0 1 P /F is a 1,048,576 bits, F la sh E lectrically E ra sa b le a n d P ro g ram m ab le R ead O nly M em ory FE 2PROM organized as 131,072 w ords by 8 bits. T he T C 5 8 F 1 0 0 1 P /F is fab ricated by

GP129

Abstract: tl 8709 p 10KMA CP2211 jl audio 500 1 schematics s3 via Twister IC FP014 FP020 s3 twister K rosan
Contextual Info: MODEL: 7170 Revision OA Contexts Title Page Cover Sheet 1 System Block Diagram 2 Power Block Diagram 3 Central Processor Unit 4 CPU Decoupling Capacitor & VTT Termination Resistor 5 North Bridge VIA TW ISTER Partial 1 6 North Bridge (VIA TWISTER ).PartiaI II

fuji ipm

Abstract: 4MBP75RA060 AC2500
Contextual Info: the express any for of the way h e re in n e ith e r F u ji is the the use Co. . L t d . p u rp o s e s for of any w ith o u t of c o p ie d , p r o p e r ty r e p ro d u c e d , E l e c t r io m a n u fa c tu r in g w h a ts o e v e r sha I I be in fo r m a t io n

MACH5 from amd

Contextual Info: COM’L: -7/10/12/15 PRELIMINARY AMD£I IND: -10/12/15/20 The MACH5-192 MACH5-192/68-7/10/12/15/20 MACH5-192/104-7/10/12/15/20 MACH5-192/120-7/10/12/15/20 MACH5-192/1 60-7/10/12/15/20 Fifth Generation MACH Architecture DISTINCTIVE CHARACTERISTICS • Fifth generation MACH architecture

Contextual Info: MIL •M-38 5 IOw M B P T 16 April 1980 MILITARY SPECIFICATION MICROCIRCUITS, CMOS, ANALOG SWITCH WITH DRIVER, MONOLITHIC SILICON This specification is approved for use by aLl Depart­ ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon, CMOS,

Intel 85C508

Abstract: Intel AP-346 AP-346 29208* intel
Contextual Info: in U APPLICATION NOTE r a ilO M O N IM tf AP-346 November 1990 Am 29000*/2 7960CX Burst EPROM Interface INTEL PROGRAMMABLE MEMORY OPERATION *Am29000 is a trademark o Advanced Micro Devices, Inc. Order Number: 292081-001 5-260 29000/27960CX BURST EPROM INTERFACE

AM29F160DB75

Abstract: AM29F160DT75 Am29F160D
Contextual Info: Am29F160D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

29lv640

Abstract: 120R SA10 SA11 SA12 SA13 SA14 SA15 29LV640M
Contextual Info: Am29LV017M Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

29LV640M

Abstract: 29lv640
Contextual Info: PRODUCTION PENDING Production subject to customer demand. Contact your local AMD sales representative for more information Am29LV017M 16 Megabit 2 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation

Contextual Info: ADVANCE INFORMATION Am29LV160M 16 Megabit 2 M x 8-Bit/1 M x 16-Bit MirrorBitTM 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 V for read, erase, and program operations ■ Manufactured on 0.23 µm MirrorBitTM process